FDC2612 [ONSEMI]
N 沟道，PowerTrench® MOSFET，200V，1.1A，725mΩ;
| 型号： | FDC2612 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，200V，1.1A，725mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
200 V
725 mW @ 10 V
1.1 A
200 V
S
D
D
FDC2612
G
D
D
General Description
TSOT23 6−Lead
(SUPERSOTt−6)
CASE 419BL
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been
optimized for low gate charge, low R
and fast switching speed.
DS(ON)
MARKING DIAGRAM
Features
• 1.1 A, 200 V. R
= 725 mW @ V = 10 V
GS
DS(ON)
262 M
• High Performance Trench Technology for Extremely Low R
• High Power and Current Handling Capability
• Fast Switching Speed
DS(ON)
1
262 = Device Code
• Low Gate Charge (8 nC Typical)
• This Device is Pb−Free, Halide Free and is RoHS Compliant
M
= Date Code
Applications
PIN CONNECTION
• DC/DC Converter
1
2
3
6
5
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
July, 2022 − Rev. 3
FDC2612/D
FDC2612
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
Drain−Source Voltage
Gate−Source Voltage
Drain Current
200
DSS
GSS
V
20
V
I
D
Continuous (Note 1a)
Pulsed
1.1
A
4
1.6
P
D
Maximum Power Dissipation
(Note 1a)
W
(Note 1b)
0.8
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
RqJA
Parameter
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
Ratings
78
Unit
°C/W
°C/W
RqJC
30
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
a. 78°C/W when mounted on
b. 156°C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
Scale 1:1 on letter size paper
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2
FDC2612
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
200
−
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
246
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 160 V, V = 0 V
−
−
−
−
−
−
1
mA
nA
nA
DSS
GS
I
= 20 V, V = 0 V
100
–100
GSSF
GSSR
DS
I
= –20 V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
2
−
4
4.5
−
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature
Coefficient
= 250 mA, Referenced to 25_C
–8.7
mV/°C
DVGS(th)
DTJ
D
R
Static Drain–Source On Resistance
V
V
= 10 V, I = 1.1 A
−
−
605
725
mW
DS(on)
GS
D
= 10 V, I = 1.1 A, T = 125_C
1133
1430
GS
D
J
I
On–State Drain Current
V
GS
V
DS
= 10 V, V = 10 V
4
−
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 10 V, I = 1.1 A
4.4
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 100 V, V = 0 V, f = 1.0 MHz
−
−
−
234
18
8
−
−
−
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
R
= 100 V, I = 1 A, V = 10 V,
−
−
−
−
−
−
−
6
6
12
12
30
16
11
−
ns
ns
d(on)
DD
D
GS
= 6 W
GEN
t
r
t
17
8
ns
d(off)
t
f
ns
Q
g
V
DS
= 100 V, I = 1.1 A, V = 10 V
8
nC
nC
nC
D
GS
Q
1.6
2.2
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
−
−
1.3
1.2
−
A
V
V
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
V
= 0 V, I = 1.3 A (Note 2)
0.8
SD
GS
S
t
I = 1.1 A, d /d = 300 A/ms (Note 2)
F
74.5
194
nS
nC
rr
iF
t
Q
rr
Diode Reverse Recovery Charge
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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3
FDC2612
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
4
3
2
1
0
1.4
V
= 10 V
GS
6.5 V
6.0 V
6.0 V
1.3
V
GS
= 4.0 V
5.0 V
1.2
1.1
1
5.5 V
4.5 V
10 V
0.9
0
2
4
6
8
10
0
1
2
3
4
V
DS
, DRAIN−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
2.6
2.2
1.8
1.4
1
1.5
I
V
= 1.1 A
I = 0.6 A
D
D
= 10 V
GS
1.3
1.1
0.9
0.7
0.5
T = 125°C
A
0.6
T = 25°C
A
0.2
−50 −25
0
25
50
75 100 125 150
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
8
10
V
DS
= 25 V
V
GS
= 0 V
1
0.1
6
4
2
0
T = 125°C
A
25°C
T = 125°C
A
0.01
−55°C
25°C
0.001
0.0001
−55°C
3
4
5
6
7
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature
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4
FDC2612
TYPICAL CHARACTERISTICS (continued)
15
12
9
350
I
D
= 1.1 A
f = 1 MHz
V = 0 V
GS
V
DS
= 50 V
100 V
300
250
200
150
100
50
CISS
150 V
6
CRSS
COSS
3
0
0
0
2
4
6
8
10
0
25
V , DRAIN TO SOURCE VOLTAGE (V)
DS
50
75
100
125
150
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
10
40
SINGLE PULSE
= 156°C/W
T = 25°C
A
100 ms
1 ms
10 ms
R
q
JA
R
LIMIT
DS(ON)
1
0.1
30
20
10
0
100 ms
1 s
DC
V
= 10 V
GS
0.01
0.001
SINGLE PULSE
R
T = 25°C
= 156°C/W
q
JA
A
0.1
1
10
100
1000
0.001 0.01
0.1
1
10
100
1000
V
DS
, DRAIN−SOURCE VOLTAGE (V)
t , TIME (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
R
(t) = r(t) + R
q
JA
q
JA
R
= 156°C/W
q
JA
0.2
0.1
0.1
P(pk)
t1
0.05
t2
T − T = P x R (t)
0.02
q
JA
J
A
0.01
Duty Cycle, D = t / t
1
2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t , TIME (s)
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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5
FDC2612
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
FDC2612
Device Marking
Package Type
Reel Size
Tape Width
Shipping
262
TSOT23 6−Lead
(Pb−Free)
7”
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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