FDC3612 [ONSEMI]
N 沟道 PowerTrench® MOSFET 100V，2.6A，125mΩ;
| 型号： | FDC3612 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 100V，2.6A，125mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
100 V
125 mW @ 10 V
135 mW @ 6 V
2.6 A
100 V
FDC3612
S
D
D
General Description
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been
G
D
D
optimized for low gate charge, low R
and fast switching speed.
TSOT23 6−Lead
(SUPERSOTt−6)
CASE 419BL
DS(ON)
Features
• 2.6 A, 100 V
R
R
= 125 mW @ V = 10 V
GS
DS(ON)
= 135 mW @ V = 6 V
DS(ON)
GS
MARKING DIAGRAM
• High Performance Trench Technology for Extremely Low R
• Low Gate Charge (14 nC Typical)
• High Power and Current Handling Capability
• Fast Switching Speed
DS(ON)
XXX MG
G
1
XXX = Specific Device Code
• This is a Pb−Free Device
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Applications
• DC/DC Converter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PINOUT
Symbol
Parameter
Drain−Source Voltage
Ratings
100
20
Unit
V
V
DSS
V
GSS
Gate−Source Voltage
V
1
2
3
6
5
4
I
D
Drain Current
Continuous (Note 1a)
Pulsed
2.6
A
20
A
E
Single Pulse Avalanche Energy (Note 3)
37
mJ
W
W
°C
AS
P
Maximum Power
Dissipation
(Note 1a)
(Note 1b)
1.6
D
0.8
T , T
Operating and Storage Temperature Range −55 to +150
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
RqJA
Thermal Resistance, Junction−to−Ambient
(Note 1a)
78
°C/W
RqJC
Thermal Resistance, Junction−to−Case
(Note 1)
30
°C/W
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
May, 2022 − Rev. 3
FDC3612/D
FDC3612
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE AVALANCHE RATINGS (Note 2)
W
Drain−Source Avalanche Energy
Drain−Source Avalanche Current
Single Pulse, V = 50 V, I = 2.6 A
−
−
−
−
90
mJ
A
DSS
DD
D
I
2.6
AR
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
100
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
99
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 80 V, V = 0 V
−
−
−
−
−
−
10
mA
nA
nA
DSS
GS
I
= 20 V, V = 0 V
100
GSSF
GSSR
DS
I
= –20 V, V = 0 V
–100
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
2
2.3
–6
4
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain–Source On Resistance
V
GS
V
GS
V
GS
= 10 V, I = 2.6 A
−
−
−
86
91
157
125
135
240
mW
DS(on)
D
= 6 V, I = 2.5 A
D
= 10 V, I = 2.6 A, T = 125°C
D
J
I
On−State Drain Current
V
GS
V
DS
= 10 V, V = 5 V
10
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 10 V, I = 2.6 A
−
10
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1.0 MHz
−
−
660
55
−
−
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
40
−
rss
R
0.1
1.4
3.0
g
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
= 50 V, I = 1 A, V = 10 V,
GEN
−
−
−
−
−
−
−
6
11
7
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
3.5
23
t
37
7.4
20
−
ns
d(off)
t
f
3.7
14
ns
Q
V
DS
= 50 V, I = 2.6 A, V = 10 V
nC
nC
nC
g
D
GS
Q
2.3
3.6
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
−
−
0.76
31
1.3
1.2
−
A
V
V
SD
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V = 0 V, I = 1.3 A (Note 2)
GS S
t
rr
I = 2.6 A, d /d = 100 A/ms (Note 2)
ns
nC
F
IF
t
I = 2.6 A, d /d = 100 A/ms (Note 2)
F
IF
t
Q
56
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
2
a.) 78 °C/W when mounted on a 1in pad of 2oz copper on FR−4 board
b.) 156 °C/W when mounted on a minimum pad
2. Pulse Test: Pulse Width ≤ 300 ms, Duty cycle ≤ 2.0 %
3. E of 37 mJ is based on starting T = 25 °C; N−ch: L = 3 mH, I = 5 A, V = 100 V, V = 10 V. 100% test at L = 0.3 mH, I = 11 A.
AS
J
AS
DD
GS
AS
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2
FDC3612
TYPICAL CHARACTERISTICS
20
16
12
8
1.8
1.6
V
GS
= 10 V
5.0V
4.5V
V
GS
= 3.5 V
4.0V
1.4
1.2
1
4.0V
4.5V
5.0V
6.0V
10V
3.5V
4
0.8
0
0
4
8
12
16
20
0
2
4
6
8
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
0.26
2.2
1.8
1.4
1
I
V
= 2.6 A
I
D
= 1.3 A
D
= 10 V
0.23
0.2
GS
T
A
= 125°C
0.17
0.14
0.11
0.08
0.05
T
A
= 25°C
0.6
0.2
2
4
6
8
10
−50 −25
0
25
50
75
100 125
150
T , Junction Temperature (°C)
J
V
, Gate to Source Voltage (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
20
100
10
V
GS
= 0 V
V
DS
= 5 V
16
12
8
T
A
= 125°C
1
25°C
0.1
T
A
= 125°C
−55°C
0.01
0.001
0.0001
25°C
4
−55°C
0
0
0.2
0.4
0.6
0.8
1
1.2
2
2.5
3
3.5
4
4.5
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
FDC3612
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
10
8
1000
f = 1 MHz
= 0 V
I
D
= 2.6 A
V
DS
= 25 V
V
50V
GS
800
600
400
200
0
75V
CISS
6
4
2
COSS
CRSS
0
0
3
6
9
12
15
0
20
40
60
80
100
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
40
50
10
SINGLE PULSE
= 156°C/W
R
LIMIT
DS(ON)
R
q
JA
30
20
10
0
T
= 25°C
A
100ms
1
0.1
1ms
10ms
100ms
V
GS
= 10 V
SINGLE PULSE
1s
0.01
R
q
= 156°C/W
JA
DC
T
A
= 25°C
0.001
0.1
1
10
100 200
0.001
0.01
0.1
1
10
100
V
DS
, Drain to Source Voltage (V)
t , Time (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
R
R
(t) = r(t) * R
q
JA
= 156°C/W
q
JA
JA
q
0.2
P(pk)
0.1
0.05
0.1
t1
t2
0.02
0.01
T
− T = P * R (t)
q
A JA
J
Duty Cycle, D = t / t
1
2
SINGLE PULSE
0.01
0.0001
0.001 0.01
0.1
1
10
100
1000
t , Time (s)
1
Figure 11. Transient Thermal Response Curve
(Note: Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.)
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4
FDC3612
ORDERING INFORMATION
†
Device
Device Marking
Package Type
TSOT−23−6 (Pb−free)
Shipping
FDC3612
.362
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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相关型号：
FDC3612_NL
Small Signal Field-Effect Transistor, 2.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
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