FDC6302P [ONSEMI]
双 P 沟道，数字 FET，-25V，-0.12A，10Ω;
| 型号： | FDC6302P |
| 厂家： | 
ONSEMI |
| 描述： | 双 P 沟道，数字 FET，-25V，-0.12A，10Ω PC 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDC6302P
Digital FET, Dual P-Channel
Features
-25 V, -0.12 A continuous, -0.5 A Peak.
General Description
These Dual P-Channel logic level enhancement mode field
effect transistors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize on-
state resistance. This device has been designed especially for
RDS(ON) = 13 W @ VGS= -2.7 V
RDS(ON) = 10 W @ VGS = -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
low voltage applications as
a
replacement for digital
transistors in load switchimg applications. Since bias
resistors are not required this one P-Channel FET can
replace several digital transistors with different bias resistors
like the IMBxA series.
Replace multiple PNP digital transistors (IMHxA series) with
one DMOS FET.
SuperSOTTM-8
SuperSOTTM-6
SOIC-16
SO-8
SOT-223
SOT-23
3
2
1
4
5
6
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
FDC6302P
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-25
V
VDSS
VGSS
ID
-8
-0.12
-0.5
V
A
- Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.9
W
PD
0.7
Operating and Storage Temperature Range
-55 to 150
°C
kV
TJ,TSTG
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
140
60
°C/W
°C/W
© 1997 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDC6302P/D
O
Electrical Characteristics (TA = 25 C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25 o C
-25
V
mV /o C
µA
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
-20
DBVDSS/DTJ
-1
IDSS
VDS = -20 V, VGS = 0 V
-10
µA
TJ = 55°C
IGSS
Gate - Body Leakage Current
VGS = -8 V, VDS= 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
ID = -250 µA, Referenced to 25 o C
mV /o C
V
Gate Threshold Voltage Temp. Coefficient
1.9
DVGS(th)/DTJ
VGS(th)
Gate Threshold Voltage
-0.65
-0.05
-1
10.6
7.9
12
-1.5
13
VDS = VGS, ID = -250 µA
VGS = -2.7 V, ID = -0.05A
VGS = -4.5 V, ID = -0.2 A
RDS(ON)
Static Drain-Source On-Resistance
W
10
TJ =125°C
18
On-State Drain Current
A
S
ID(ON)
gFS
VGS = -2.7 V, VDS = -5 V
VDS = -5 V, ID= -0.2 A
Forward Transconductance
0.135
DYNAMIC CHARACTERISTICS
Input Capacitance
11
7
pF
pF
pF
Ciss
Coss
Crss
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
1.4
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
VDD = -6 V, ID = -0.2 A,
VGS = -4.5 V, RGEN = 50 W
5
8
12
16
ns
ns
9
18
ns
5
10
ns
Qg
Qgs
Qgd
VDS = -5 V, ID = - 0.2 A,
VGS = -4.5 V
0.22
0.12
0.05
0.31
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
-0.7
-1.3
A
V
IS
-1
VSD
VGS = 0 V, IS = -0.7 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
a. 140OC/W on a 0.125 in2 pad of
2oz copper.
b. 180OC/W on a 0.005 in2 of pad
of 2oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
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2
Typical Electrical Characteristics
2
1.5
1
0.2
-4.0
-3.5
V
= -5.0V
-4.5
GS
V
= -2.0 V
GS
-3.0
0.15
0.1
0.05
0
-2.5
-2.7
-2.7
-2.5
-3.0
-4.0
-2.0
-3.5
-4.5
0.5
0
0.05
0.1
-I , DRAIN CURRENT (A)
0.15
0.2
0
1
2
3
4
D
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
25
20
15
10
5
1.6
1.4
1.2
1
ID = -0.05A
I
= -0.05A
= -2.7V
T = 25°C
A
D
V
GS
125 °C
0.8
0.6
0
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
T , JUNCTION TEMPERATURE (°C)
-V
,GATE TO SOURCE VOLTAGE (V)
GS
J
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
Figure 3. On-Resistance Variation
with Temperature.
-1
-0.75
-0.5
-0.25
0
0.5
T
= -55°C
VDS = -5V
J
VGS = 0V
T
= 125°C
J
25°C
0.1
125°C
25°C
0.01
-55°C
-0.5
-1
V
-1.5
-2
-2.5
-3
0.0001
0
0.2
-V
0.4
0.6
0.8
1
1.2
, GATE TO SOURCE VOLTAGE (V)
GS
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
Figure 5. Transfer Characteristics.
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3
Typical Electrical And Thermal Characteristics
25
8
I D = -0.2A
VDS= -5V
15
10
-10
C
6
iss
-15
C
oss
4
2
0
5
3
2
f = 1 MHz
VGS = 0 V
C
rss
1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.3
1
2
5
10 15
25
Q
, GATE CHARGE (nC)
g
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
5
4
3
2
1
0
0.8
0.5
SINGLE PULSE
RqJA =See note 1b
TA = 25°C
0.2
0.1
0.05
VGS = -2.7V
SINGLE PULSE
RqJA=See Note 1b
TA= 25°C
0.02
0.01
0.01
0.1
1
10
100
300
1
2
5
10
20
40
SINGLE PULSE TIME (SEC)
- V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
q
JA
q
R
= See Note 1b
0.2
0.2
JA
q
0.1
0.1
P(pk)
0.05
0.05
t
1
t
2
0.02
0.01
T
- T = P * R
(t)
JA
J
A
q
Single Pulse
0.02
0.01
Duty Cycle, D = t / t
1
2
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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