FDC6310P [ONSEMI]
双 P 沟道 PowerTrench® MOSFET，2.5V 指定，-20V，-2.2A，125mΩ;
| 型号： | FDC6310P |
| 厂家： | 
ONSEMI |
| 描述： | 双 P 沟道 PowerTrench® MOSFET，2.5V 指定，-20V，-2.2A，125mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual, P-Channel,
2.5 V Specified,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
−20 V
125 mW @ −4.5 V
190 mW @ −2.5 V
−2.2 A
-20 V, -2.2 A, 125 mW
D2
S1
D1
FDC6310P
G2
S2
General Description
G1
These P−Channel 2.5 V specified MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been
especially tailored to minimize on−state resistance and yet maintain
low gate charge for superior switching performance.
TSOT23 6−Lead
SUPERSOT−6
CASE 419BL
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where the bigger
more expensive SO−8 and TSSOP−8 packages are impractical.
MARKING DIAGRAM
Features
310 M
• –2.2 A, –20 V
1
♦ R
♦ R
= 125 mW @ V = –4.5 V
GS
DS(ON)
310 = Specific Device Code
= 190 mW @ V = –2.5 V
DS(ON)
GS
M
= Date Code
• Low Gate Charge
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low R
DS(ON)
PIN CONNECTIONS
• SUPERSOTt−6 Package: Small Footprint 72% Smaller than
Standard SO−8); Low Profile (1 mm Thick)
4
3
2
1
• This Device is Pb−Free, Halide Free and is RoHS Compliant
5
6
Applications
• Load Switch
• Battery Protection
• Power Management
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Symbol
Parameter
Drain−Source Voltage
Ratings
−20
Unit
V
V
DSS
GSS
V
Gate−Source Voltage
12
V
I
D
Drain Current
− Continuous (Note 1a)
− Pulsed
A
−2.2
−6
P
D
Power Dissipation for Single Operation
W
(Note 1a)
(Note 1b)
(Note 1c)
0.96
0.9
0.7
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
May, 2023 − Rev. 3
FDC6310P/D
FDC6310P
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
Ratings
130
Unit
°C/W
°C/W
R
q
JA
R
60
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = –250 mA
–20
−
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= –250 mA, Referenced to 25°C
–11
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= –16 V, V = 0 V
−
−
−
−
−
−
–1
mA
nA
nA
DSS
GS
I
= 12 V, V = 0 V
100
GSSF
GSSR
DS
I
= –12 V, V = 0 V
–100
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = –250 mA
–0.6
−
–1.0
3
–1.5
−
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature
Coefficient
= –250 mA, Referenced to 25°C
mV/°C
DVGS(th)
DTJ
D
R
DS(on)
Static Drain–Source On–Resistance
V
GS
V
GS
V
GS
= –4.5 V, I = –2.2 A
−
−
−
100
145
137
125
190
184
mW
D
= –2.5 V, I = –1.8 A
D
= –4.5 V, I = –2.2 A, T = 125°C
D
J
I
On–State Drain Current
V
GS
V
DS
= –4.5 V, V = –5 V
–6
−
−
6
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= –5 V, I = –3.5 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= –10 V, V = 0 V, f = 1.0 MHz
−
−
−
337
88
−
−
−
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
51
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
R
= –10 V, I = –1 A, V = –4.5 V,
−
−
−
−
−
−
−
9
12
18
22
20
10
5.2
−
ns
ns
d(on)
DD
D
GS
= 6 W
GEN
t
r
t
10
ns
d(off)
t
f
5
ns
Q
g
V
DS
= –10 V, I = –2.2 A, V = –4.5 V
3.7
0.65
1.3
nC
nC
nC
D
GS
Q
gs
gd
Q
−
DRAIN–SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage = 0 V, I = –0.8 A (Note 2)
I
−
−
−
–0.8
–1.2
A
V
S
V
SD
V
GS
0.77
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 130°C/W when mounted
b. 140°C/W when mounted
b. 180°/W when mounted on
2
2
on a 0.125 in pad of 2 oz.
on a .004 in pad of 2 oz
a minimum pad.
copper.
copper.
Scale 1:1 on letter size paper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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2
FDC6310P
TYPICAL CHARACTERISTICS
2.75
2.5
6
5
4
3
2
1
0
V
GS
= −2.0 V
V
= −4.5 V
GS
2.25
2
−3.5 V
−3.0 V
−2.5 V
−2.5 V
1.75
1.5
1.25
1
−2.0 V
−1.8 V
−3.0 V
−3.5 V
−4.5 V
5
0.75
0
0.5
1
1.5
2
2.5
0
1
2
3
4
6
−V , DRAIN−SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.6
1.4
1.2
1
0.4
0.35
0.3
I
V
= −2.2 A
I = −2.2 A
D
D
= −4.5 V
GS
0.25
0.2
T = 125°C
A
0.15
0.1
0.8
T = 25°C
A
0.6
0.05
−50 −25
0
25
50
75
100 125 150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (°C)
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
5
100
10
V
DS
= −5 V
V
GS
= 0 V
T = −55°C
A
25°C
4
3
2
1
0
T = 125°C
A
125°C
1
25°C
0.1
−55°C
0.01
0.001
0.0001
0.5
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with
Source Current and Temperature
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3
FDC6310P
TYPICAL CHARACTERISTICS (continued)
600
5
4
3
2
1
0
f = 1 MHz
= 0 V
I
D
= −2.2 A
V
DS
= −5 V
V
GS
500
400
300
200
100
0
−10 V
−15 V
C
ISS
C
OSS
C
RSS
0
1
2
3
4
5
0
5
10
15
20
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
5
4
3
2
1
0
SINGLE PULSE
= 180°C/W
T = 25°C
A
R
q
JA
R
LIMIT
DS(ON)
10 ms
100 ms
1 s
10 s
1
DC
V
= −4.5 V
GS
0.1
SINGLE PULSE
R
T = 25°C
= 180°C/W
q
JA
A
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
−V , DRAIN−SOURCE VOLTAGE (V)
DS
t , TIME (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
R
R
(t) = r(t) + R
= 180°C/W
q
q
q
JA
JA
JA
0.1
0.05
P(pk)
0.02
0.01
t
1
0.01
t
2
SINGLE PULSE
T − T = P x R (t)
q
JA
J
A
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , TIME (s)
1
Figure 11. Transient Thermal Response Curve
(Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.)
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4
FDC6310P
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
FDC6310P
Device Marking
Package
Reel Size
Tape Width
Shipping
310
TSOT23 6−Lead
SUPERSOT−6
7”
8 mm
3000 / Tape & Reel
(Pb−Free, Halide Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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