FDC637AN [ONSEMI]
N 沟道,PowerTrench® MOSFET,2.5V 指定,20V,6.2A,24mΩ;型号: | FDC637AN |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,2.5V 指定,20V,6.2A,24mΩ PC 开关 光电二极管 晶体管 |
文件: | 总6页 (文件大小:333K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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FDC637AN
Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced
• 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V
RDS(on) = 0.032 Ω @ VGS = 2.5 V
using
ON
Semiconductor's
advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
• Fast switching speed.
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
• Low gate charge (10.5nC typical).
• High performance trench technology for extremely
low RDS(ON)
.
Applications
• SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
• DC/DC converter
• Load switch
• Battery Protection
S
1
6
5
4
D
D
2
3
G
D
SuperSOT TM-6
D
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
FDC637AN
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
20
V
V
A
8
±
Drain Current - Continuous
Drain Current - Pulsed
6.2
20
(Note 1a)
PD
Power Dissipation for Single Operation
1.6
W
(Note 1a)
(Note 1b)
0.8
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
78
30
Rθ
(Note 1a)
(Note 1)
C/W
C/W
°
JA
Thermal Resistance, Junction-to-Case
Rθ
°
JC
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.637
FDC637AN
7’’
8mm
3000 units
1999 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDC6FDC637AN/DD
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
Drain-Source Breakdown Voltage
20
V
VGS = 0 V, I = 250
A
µ
D
Breakdown Voltage Temperature
Coefficient
14
∆
ID = 250µA, Referenced to 25°C
mV/°C
T
∆
J
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
A
µ
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
100
-100
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
0.4
10
0.82
-3
1.5
V
V
DS = VGS, I = 250 A
µ
D
Gate Threshold Voltage
Temperature Coefficient
V
∆
ID =250µA,Referenced to 125°C
mV/°C
∆
GS(th)
T
J
RDS(on)
Static Drain-Source
On-Resistance
VGS = 4.5 V,ID = 6.2 A
VGS = 4.5 V,I = 6.2 A,T =125 C
VGS = 2.5 V, ID = 5.2 A
VGS = 4.5 V, VDS = 5 V
0.019 0.024
0.028 0.041
0.025 0.032
Ω
°
D
J
ID(on)
gFS
On-State Drain Current
A
S
Forward Transconductance
VDS = 5 V, ID = 6.2 A
7.4
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
1125
290
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
145
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 10 V, ID = 1 A,
9
13
18
24
42
20
16
ns
ns
VGS = 4.5 V, RGEN = 6
Ω
26
ns
11
ns
Qg
Qgs
Qgd
VDS = 5 V, ID = 6.2 A,
VGS = 4.5 V
10.5
1.5
2.2
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
1.3
1.2
A
V
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A
0.7
(Note 2)
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper.
b) 156° C/W when mounted on a minimum pad of 2 oz.copper.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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22
Typical Characteristics
20
2.5
2
VGS= 4.5V
2.5V
3.0V
16
12
8
2.0V
VGS= 2.0V
1.5
1
2.5V
3.0V
4.5V
15
4
1.5V
0.5
0
0
5
10
ID, DRAIN CURRENT (A)
20
0
0.4
0.8
1.2
1.6
2
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.08
0.06
0.04
0.02
0
1.5
1.4
1.3
1.2
1.1
1
ID= 6.2A
ID= 6.2A
VGS= 4.5V
TJ= 125oC
25oC
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
10
1
20
15
10
5
TJ= -55oC
25oC
VGS = 0
VDS= 5V
125oC
TJ= 125oC
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
VSD, BODY DIODE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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3
Typical Characteristics (continued)
1800
1500
1200
900
600
300
0
5
VDS = 5V
f = 1MHz
VGS = 0V
ID = 6.2A
10V
15V
4
3
2
1
0
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0
5
10
15
20
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics
Figure 8. Capacitance Characteristics
5
4
3
2
1
0
100
10
SINGLE PULSE
R
θJA = 156oC/W
TA = 25oC
100
s
µ
RDS(ON) LIMIT
1ms
10ms
100ms
1s
1
DC
VGS= 4.5V
SINGLE PULSE
RθJA= 156oC/W
TA= 25oC
0.1
0.01
0.1
1
10
100
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.5
R
(t) = r(t) * R
θ
θJA
R
JA
= 156°C/W
θJA
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
t
1
t
2
0.02
T
- T = P * R
(t)
θJA
J
A
0.02
0.01
Duty Cycle, D = t / t
1
2
Single Pulse
0.01
0.005
0.00001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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