FDC640P [ONSEMI]
P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，53mΩ;
| 型号： | FDC640P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，53mΩ |
| 文件： | 总7页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel,
POWERTRENCH), Specified
V
R
MAX
I MAX
D
DSS
DS(ON)
−20 V
0.053 W @ −4.5 V
0.080 W @ −2.5 V
−4.5 A
2.5 V
S
D
FDC640P
D
G
D
General Description
D
This P−Channel 2.5 V specified MOSFET uses a rugged gate
version of onsemi’s advanced POWERTRENCH process. It has been
optimized for power management applications with a wide range of
gate drive voltage (2.5 V – 12 V).
TSOT23 6−Lead
(SUPERSOTt−6)
CASE 419BL
MARKING DIAGRAM
Features
• −4.5 V, −20 V.
R
R
= 0.053 W @ V = −4.5 V
GS
DS(ON)
= 0.080 W @ V = −2.5 V
DS(ON)
GS
640 MG
• Rugged Gate Rating ( 12 V)
G
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low R
• This is a Pb−Free and Halide Free Device
DS(ON)
640
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
Applications
(Note: Microdot may be in either location)
• Battery Management
• Load Switch
• Battery Protection
PIN ASSIGNMENT
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
A
Symbol
Parameter
Drain−Source Voltage
Gate−Source Voltage
Value
−20
12
Unit
V
V
DSS
GSS
V
V
I
D
Drain Current
A
−Continuous (Note 1a.)
−4.5
−20
−Pulsed
ORDERING INFORMATION
P
Maximum Power Dissipation
(Note 1a.)
W
D
†
Device
Package
Shipping
1.6
0.8
(Note 1b.)
FDC640P
TSOT−23−6
(SUPERSOTt−6)
(Pb−Free)
3000 /
Tape & Reel
T , T
Operating and Storage Junction
Temperature Range
−55 to
+150
°C
J
STG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction−to−Ambient (Note 1a.)
78
°C/W
q
JA
R
Thermal Resistance,
Junction−to−Case (Note 1)
30
°C/W
q
JC
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
May, 2022 − Rev. 6
FDC640P/D
FDC640P
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = –250 mA
−20
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= –250 mA, Referenced to 25°C
−
−14
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= –16 V, V = 0 V
−
−
−
−
−
−
−1
mA
nA
nA
DSS
GS
I
= 12 V, V = 0 V
100
GSSF
GSSR
DS
I
= –12 V, V = 0 V
−100
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = –250 mA
−0.6
−1.0
−1.5
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature
Coefficient
= –250 mA, Referenced to 25°C
−
3
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain–Source On–Resistance
V
GS
V
GS
V
GS
= −4.5 V, I = −4.5 A
−
−
−
0.039
0.062
0.053
0.053
0.080
0.077
W
DS(on)
D
= −2.5 V, I = −3.6 A
D
= −4.5 V, I = −4.5 A, T = 125°C
D
J
I
On–State Drain Current
V
GS
V
GS
= −4.5 V, V = −5 V
−20
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= −5 V, I = −4.5 A
−
16
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= –10 V, V = 0 V, f = 1.0 MHz
−
−
−
890
244
123
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= −10 V, I = −1 A,
−
−
−
−
−
−
−
12
9
22
18
38
23
13
−
ns
ns
d(on)
DD
GS
D
= −4.5 V, R
= 6 W
GEN
t
r
t
24
13
9
ns
d(off)
t
f
ns
Q
V
DS
V
GS
= −10 V, I = −4.5 A,
nC
nC
nC
g
D
= −4.5 V
Q
2
gs
gd
Q
3
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage = 0 V, I = −1.3 A (Note 2)
I
−
−
−
−1.3
−1.2
A
V
S
V
SD
V
GS
−0.7
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
2
a.78°C/W when mounted on a 1in pad of 2oz copper on FR−4 board.
b.156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
FDC640P
TYPICAL CHARACTERISTICS
15
12
3
V
= −4.5 V
GS
−3.0 V
V
GS
= −2.0 V
−3.5 V
−2.5 V
2.5
9
6
3
0
2
1.5
1
−2.5 V
−3.0 V
−2.0 V
−3.5 V
−4.0 V
−4.5 V
0.5
0
0.5
2
2.5
0
15
1
1.5
3
6
9
12
−I , Drain Current (A)
D
−V , Drain−Source Voltage (V)
DS
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
1.5
1.4
0.16
0.14
I
D
= −2.25 A
I
V
= −4.5 A
D
= −4.5 V
GS
1.3
1.2
1.1
1
0.12
0.1
T = 125°C
A
0.08
0.06
0.04
0.02
0.9
T = 25°C
A
0.8
0.7
−50
−25
0
25
50
75
100
125
150
1.5
2
2.5
3
5
3.5
4
4.5
−V , Gate to Source Voltage (V)
GS
T , Junction Temperature (5C)
J
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation
with Gate−to−Source Voltage
10
12
10
V
DS
= −5 V
25°C
V
GS
= 0 V
T = −55°C
A
1
0.1
T = 125°C
A
125°C
8
6
4
2
0
25°C
−55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
−V , Gate to Source Voltage (V)
GS
−V , Body Diode Forward Voltage (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
FDC640P
TYPICAL CHARACTERISTICS (continued)
5
4
1200
V
= −5 V
f = 1 MHz
= 0 V
DS
I
D
= −4.5 A
V
GS
−10 V
1000
800
600
400
200
0
C
ISS
−15 V
3
2
1
0
C
OSS
C
RSS
0
5
10
20
0
2
4
6
8
10
12
15
−V , Drain to Source Voltage (V)
DS
Q , Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
5
4
Single Pulse
100 ms
R
= 156°C/W
q
JA
R
Limit
DS(ON)
T = 25°C
A
1 ms
10 ms
100 ms
1 s
3
2
1
0
1
10 s
DC
V
= −4.5 V
0.1
GS
Single Pulse
= 156°C/W
R
q
JA
T = 25°C
A
0.01
1
10
100
0.1
1
10
100
1000
0.1
t , Time (s)
1
−V , Drain−Source Voltage (V)
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.2
0.1
R
R
(t) = r(t) + R
= 156°C/W
q
q
q
JA
JA
JA
0.1
0.01
0.05
0.02
0.01
P(pk)
t
1
t
2
Single Pulse
T − T = P * R
(t)
JA
q
J
A
Duty Cycle, D = t /t
1
2
0.001
10
0.00001
0.0001
0.001
0.01
0.1
t , Time (s)
1
100
1000
1
Figure 11. Transient Thermal Response Curve
NOTE: Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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4
FDC640P
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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