FDC658P [ONSEMI]
单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-4A，50mΩ;
| 型号： | FDC658P |
| 厂家： | 
ONSEMI |
| 描述： | 单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-4A，50mΩ 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Single,
P-Channel, Logic Level,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
−30 V
0.05 W @ −10 V
−4 A
0.075 W @ −4.5 V
FDC658P
S
D
D
General Description
This P−Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored
to minimize the on−state resistance and yet maintain low gate charge
for superior switching performance. These devices are well suited for
notebook computer applications: load switching and power
management, battery charging circuits, and DC/DC conversion.
G
D
Pin 1
D
TSOT23 6−Lead
(SUPERSOT−6)
CASE 419BL
Features
• −4 A, −30 V
MARKING DIAGRAM
♦ R
♦ R
= 0.050 W @ V = −10 V
GS
DS(ON)
= 0.075 W @ V = −4.5 V
DS(ON)
GS
658 M
• Low Gate Charge (8 nC Typical)
• High Performance Trench Technology for Extremely Low R
DS(ON)
1
• SUPERSOTt−6 Package: Small Footprint (72% Smaller than
Standard SO−8); Low Profile (1 mm Thick)
• This is a Pb−Free Device
658 = Specific Device Code
M
= Date Code
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
PIN ASSIGNMENT
Symbol
Parameter
Drain−Source Voltage
Value
−30
Unit
V
V
DSS
GSS
1
2
3
6
5
4
V
Gate−Source Voltage − Continuous
Drain Current − Continuous (Note 1a)
− Pulsed
20
V
I
D
−4
A
−20
P
D
Maximum Power Dissipation (Note 1a)
(Note 1b)
1.6
W
0.8
T , T
Operating and Storage Temperature
Range
−55 to 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Shipping
3000 / Tape & Reel
Package
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
TSOT23−6
(Pb−Free)
Symbol
Parameter
Max
Unit
FDC658P
R
Thermal Resistance,
Junction−to−Ambient (Note 1a)
78
°C/W
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
R
Thermal Resistance,
Junction−to−Case (Note 1)
30
°C/W
q
JA
1. R
is the sum of the junction−to−case and case−to−ambient thermal
q
JA
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R is guaranteed by design while R
q
q
CA
JC
is determined by the user’s board design.
2
a. 78°C/W when mounted on a 1 in pad of 2 oz Cu on FR−4 board.
b. 156°C/W when mounted on a minimum pad of 2 oz Cu on FR−4 board.
© Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
June, 2022 − Rev. 4
FDC658P/D
FDC658P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = −250 mA
−30
−
−
−22
−
−
−
V
mV/°C
mA
DSS
GS
D
DBV
/DT Breakdown Voltage Temp. Coefficient
= −250 mA, Referenced to 25°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
V
V
V
= −24 V, V = 0 V
−
−1
DSS
DS
GS
= −24 V, V = 0 V, T = 55°C
−
−
−10
100
−100
mA
DS
GS
GS
GS
J
I
Gate − Body Leakage, Forward
Gate − Body Leakage, Reverse
= 20 V, V = 0 V
−
−
nA
GSSF
DS
I
= −20 V, V = 0 V
−
−
nA
GSSR
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
/DT Gate Threshold Voltage Temp. Coefficient
V
I
= V , I = −250 mA
−1
−
−1.7
4.1
−3
−
V
mV/°C
W
GS(th)
DS
GS D
DV
= −250 mA, Referenced to 25°C
GS(th)
J
D
R
DS(ON)
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −4.0 A
−
0.041
0.058
0.06
−
0.05
0.08
0.075
−
D
= −10 V, I = −4.0 A, T = 125°C
−
D
J
= −4.5 V, I = −3.4 A
−
D
I
On−State Drain Current
= −10 V, V = −5 V
−20
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= −5 V, I = −4 A
9
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −15 V, V = 0 V, f = 1.0 MHz
−
−
−
750
220
100
−
−
−
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
t
Turn − On Delay Time
Turn − On Rise Time
Turn − Off Delay Time
Turn − Off Fall Time
Total Gate Charge
V
R
= −15 V, I = −1 A, V = −10 V,
−
−
−
−
−
−
−
12
14
24
16
8
22
25
38
27
12
−
ns
ns
D(on)
DD
D
GS
= 6 W
GEN
t
r
t
ns
D(off)
t
f
ns
Q
g
V
DS
= −15 V, I = −4.0 A, V = −5 V
nC
nC
nC
D
GS
Q
gs
Q
gd
Gate−Source Charge
Gate−Drain Charge
1.8
3
−
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Continuous Source Diode Current
−
−
−
−1.3
−1.2
A
V
S
V
SD
Drain−Source Diode Forward Voltage
V
GS
= 0 V, I = −1.3 A (Note 2)
−0.76
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
FDC658P
TYPICAL ELECTRICAL CHARACTERISTICS
2
20
16
12
8
V
= −10 V
−6.0 V
GS
−4.5 V
V
GS
= −4.0 V
1.8
1.6
1.4
1.2
1
−4.0 V
−4.5 V
−5.0 V
−6.0 V
−8.0 V
−3.5 V
4
−3.0 V
3
−10.0 V
0
0.8
0
4
8
12
16
20
0
1
2
4
−V , DRAIN−SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.6
1.4
0.16
I
V
= −4 A
D
I
= −2 A
D
= −10 V
GS
0.12
0.08
0.04
0
1.2
1
T = 125°C
J
T = 25°C
J
0.8
0.6
−50 −25
0
25
50
75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
20
20
10
V
DS
= −5 V
V
GS
= 0 V
T = −55°C
J
125°C
25°C
16
12
8
1
T = 125°C
J
25°C
0.1
0.01
0.001
0.0001
−55°C
4
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage Variation
with Source Current and Temperature
www.onsemi.com
3
FDC658P
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
10
8
3000
I
D
= −4 A
C
iss
1000
V
DS
= −5 V
−10 V
6
−15 V
300
100
Coss
Crss
4
2
f = 1 MHz
V
GS
= 0 V
0
30
0.1
0
3
6
9
12
15
0.3
1
3
7
15 30
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
5
80
SINGLE PULSE
100 ms
30
10
R
= 156°C/W
q
JA
RDS(ON) LIMIT
4
3
2
1
0
T = 25°C
A
1 ms
10 ms
100 ms
1 s
3
1
0.3
0.1
V
GS
= −10 V
DC
SINGLE PULSE
R
q
JA
= 156°C/W
0.03
0.01
T = 25°C
A
0.1 0.2
0.5
1
2
5
10 20
50
0.01
0.1
1
10
100 300
−V , DRAIN−SOURCE VOLTAGE (V)
DS
SINGLE PULSE TIME (s)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.5
0.2
R
R
(t) = r(t) x R
= 156°C/W
q
q
q
JA
JA
JA
0.2
0.1
0.1
0.05
P(pk)
0.05
t1
0.02
t2
0.02
0.01
T − T = P x R (t)
q
JA
Duty Cycle, D = t / t
J
A
0.01
Single Pulse
1
2
0.005
0.00001
0.0001
0.001
0.01
0.1
t , TIME (s)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDC697P_F077
Power Field-Effect Transistor, 8A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, FLMP, SUPERSOT-6
FAIRCHILD
FDC699P_NL
Power Field-Effect Transistor, 7A I(D), 20V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, FLMP, SUPERSOT-6
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明