FDD3706 [ONSEMI]
N 沟道，PowerTrench® MOSFET，20V，50A，9mΩ;
| 型号： | FDD3706 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，20V，50A，9mΩ 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2015
FDD3706/FDU3706
20V N-Channel PowerTrenchÒ MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
·
50 A, 20 V
RDS(ON) = 9 mW @ VGS = 10 V
RDS(ON) = 11 mW @ VGS = 4.5 V
RDS(ON) = 16 mW @ VGS = 2.5 V
·
·
·
Low gate charge (16 nC)
Fast Switching
Applications
·
·
DC/DC converter
Motor Drives
High performance trench technology for extremely
low RDS(ON)
D
G
I-PAK
(TO-251AA)
G
D-PAK
(TO-252)
G D S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
20
± 12
50
V
V
A
VGSS
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
ID
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
14.7
60
Pulsed
PD
W
Power Dissipation
@TC=25°C
@TA=25°C
@TA=25°C
44
(Note 1a)
(Note 1b)
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
°C
Thermal Characteristics
RqJC
RqJA
RqJA
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
3.4
45
96
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDD3706
FDU3706
Package
Reel Size
13’’
Tape width
Quantity
FDD3706
D-PAK (TO-252)
I-PAK (TO-251)
16mm
N/A
2500 units
75
FDU3706
Tube
FDD3706/FDU3706 Rev. 1.3
Ó2002 Fairchild Semiconductor Corp.
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
IAS
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD = 10V, ID=7A
60
7
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V,
ID = 250 mA
20
V
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
13
ID = 250 mA,Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 16 V,
VGS = 12 V,
VGS = –12 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
1
mA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 250 mA
0.5
30
1
1.5
V
Gate Threshold Voltage
Temperature Coefficient
–3.5
DVGS(th)
DTJ
ID = 250 mA,Referenced to 25°C
mV/°C
VGS = 10 V,
VGS = 4.5 V,
VGS = 2.5 V,
ID = 16.2 A
ID = 14.7 A
ID = 12.2 A
7.5
8
11
9
RDS(on)
Static Drain–Source
On–Resistance
mW
11
16
19
12.6
VGS = 4.5 V, ID = 14.7 A,TJ = 125°C
ID(on)
gFS
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V,
VDS = 5 V
A
S
Forward Transconductance
ID = 14.7 A
65
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1882
430
pF
pF
pF
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
201
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
15
35
16
16
3.7
4
20
27
56
29
23
ns
ns
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 W
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 10V,
VGS = 4.5 V
ID = 14.7 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
3.2
1.2
A
V
VSD
Drain–Source Diode Forward Voltage
0.7
VGS = 0 V,
IS = 3.2 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a)
R
qJA = 40°C/W when mounted on a
b)
R
qJA = 96°C/W when mounted
1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as:
RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD3706/FDU3706 Rev. 1.3
Typical Characteristics
100
1.8
1.6
1.4
1.2
1
VGS=4.5V
3.0V
3.5V
80
VGS = 2.5V
2.5V
60
40
20
0
3.0V
3.5V
4.0V
4.5V
2.0V
0.8
0
20
40
60
80
100
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.6
0.03
ID = 14.7A
VGS = 4.5V
ID = 7.4A
1.4
1.2
1
0.025
0.02
TA = 125oC
0.015
0.01
TA = 25oC
0.8
0.6
0.005
-50
-25
0
25
50
75
100
125
150
175
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
60
50
40
30
20
10
0
100
TA =-55oC
VGS = 0V
25oC
VDS = 5V
10
1
125oC
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD3706/FDU3706 Rev. 1.3
Typical Characteristics
2500
2000
1500
1000
500
10
f = 1MHz
VGS = 0 V
VDS = 5V
ID = 14.7A
10V
CISS
8
6
4
2
0
15V
COSS
CRSS
0
0
5
10
15
20
0
10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
80
60
40
20
0
1000
100
10
SINGLE PULSE
R
qJA = 96°C/W
TA = 25°C
100µs
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
1
VGS = 4.5V
SINGLE PULSE
RqJA = 96oC/W
TA = 25oC
DC
0.1
0.01
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.2
Rq (t) = r(t) * Rq
JA
JA
0.1
0.01
0.1
RqJA = 96 °C/W
0.05
0.02
P(pk)
0.01
t1
t2
0.001
0.0001
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD3706/FDU3706 Rev. 1.3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FDD37PG1EL-K1019
D Subminiature Connector, 37 Contact(s), Male, 0.109 inch Pitch, Solder Terminal, Locking, Receptacle
MOLEX
FDD37PG1L-K1019
D Subminiature Connector, 37 Contact(s), Male, 0.109 inch Pitch, Solder Terminal, Locking, Receptacle
MOLEX
FDD37PG1LR-K1019
D Subminiature Connector, 37 Contact(s), Male, 0.109 inch Pitch, Solder Terminal, Locking, Receptacle
MOLEX
FDD37PG1SL-K1019
D Subminiature Connector, 37 Contact(s), Male, 0.109 inch Pitch, Solder Terminal, Locking, Receptacle
MOLEX
FDD37PG2EL-K1019
D Subminiature Connector, 37 Contact(s), Male, 0.109 inch Pitch, Solder Terminal, Locking, Receptacle
MOLEX
©2020 ICPDF网 联系我们和版权申明