FDD8796 [ONSEMI]
N 沟道，PowerTrench® MOSFET，25V，35A，5.7mΩ;
| 型号： | FDD8796 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，25V，35A，5.7mΩ 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：556K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2015
FDD8796/FDU8796
N-Channel PowerTrench® MOSFET
25V, 35A, 5.7mΩ
General Description
Features
Max rDS(on) =5.7mΩ at VGS = 10V, ID = 35A
Max rDS(on) =8.0mΩ at VGS = 4.5V, ID = 35A
Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V
Low gate resistance
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Avalanche rated and 100% tested
RoHS Compliant
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
D
G
S
I-PAK
G
D S
Short Lead I-PAK
(TO-251AA)
S
MOSFET Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
25
±20
V
V
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed
35
ID
98
A
(Note 1)
(Note 2)
305
EAS
Single Pulse Avalanche Energy
Power Dissipation
91
mJ
W
PD
88
TJ, TSTG
Operating and Storage Temperature
-55 to 175
°C
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case TO_252, TO_251
Thermal Resistance, Junction to Ambient TO_252, TO_251
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
1.7
100
52
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD8796
Device
FDD8796
Package
TO-252AA
TO-251AA
TO-251AA
Reel Size
13’’
Tape Width
Quantity
16mm
N/A
2500 units
75 units
FDU8796
FDU8796
N/A (Tube)
N/A (Tube)
FDU8796
FDU8796_F071
N/A
75 units
©2006 Fairchild Semiconductor Corporation
FDD8796/FDU8796 Rev. 1.1
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
25
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
7
mV/°C
1
VDS = 20V
VGS = 0V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
TJ = 150°C
250
±100
VGS = ±20V
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.2
1.8
2.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
-6.7
mV/°C
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 35A
4.5
6.0
5.7
8.0
rDS(on)
Drain to Source On Resistance
mΩ
VDS = 10V, ID = 35A
TJ = 175°C
6.9
9.5
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1960
455
315
1.1
2610
605
pF
pF
pF
Ω
VDS = 13V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
475
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
10
24
99
57
37
19
6
20
39
ns
ns
VDD =13V, ID = 35A
VGS = 10V, RGS = 20Ω
Turn-Off Delay Time
Fall Time
158
91
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
VGS = 0 to10V
52
nC
nC
nC
nC
VDD =13V,
ID = 35A,
Qg
VGS = 0 to 5V
27
Qgs
Qgd
Ig = 1.0mA
6
Drain-Source Diode Characteristics
VGS = 0V, IS = 35A
0.9
0.8
30
1.25
1.0
45
V
V
VSD
Source to Drain Diode Voltage
VGS = 0V, IS = 15A
trr
Reverse Recovery Time
IF = 35A, di/dt = 100A/µs
IF = 35A, di/dt = 100A/µs
ns
nC
Qrr
Notes:
Reverse Recovery Charge
23
35
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting T = 25°C, L = 0.3mH, I = 24.7A, V = 23V, V = 10V.
J
AS
DD
GS
2
www.fairchildsemi.com
FDD8796/FDU8796 Rev. 1.1
Typical Characteristics TJ = 25°C unless otherwise noted
70
60
50
40
30
20
10
0
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 10V
VGS = 4.5V
VGS = 3.5V
VGS = 3.5V
VGS = 4.5V
VGS = 3V
VGS = 10V
0
1
2
3
4
0
10
20
30
40
50
60
70
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
14
1.8
ID = 35A
PULSE DURATION = 80µs
ID =35A
DUTY CYCLE = 0.5%MAX
VGS = 10V
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
TJ = 175oC
6
TJ = 25oC
4
2
2
4
6
8
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
100
70
VGS = 0V
PULSE DURATION = 80µs
60
50
40
30
20
10
0
DUTY CYCLE = 0.5%MAX
10
TJ = 175oC
TJ = 175oC
TJ = -55oC
1
TJ = 25oC
0.1
TJ = 25oC
TJ = -55oC
0.01
1E-3
0.0
0.3
0.6
0.9
1.2
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
www.fairchildsemi.com
FDD8796/FDU8796 Rev. 1.1
Typical Characteristics TJ = 25°C unless otherwise noted
10
8
4000
Ciss
VDD = 10V
1000
6
Coss
VDD = 13V
4
VDD = 16V
Crss
2
f = 1MHz
GS = 0V
V
100
0
0.1
1
10
0
10
20
30
40
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
50
100
80
TJ = 25oC
VGS = 10V
10
TJ = 125oC
60
VGS = 4.5V
40
TJ = 150oC
20
R
θJC = 1.7oC/W
1
0.01
0
25
0.1
1
10
100
300
50
75
100
125
150
175
tAV, TIME IN AVALANCHE(ms)
TC, CASE TEMPERATURE(oC)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
1000
10000
o
T
= 25 C
C
VGS = 10V
10us
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
100
CURRENT AS FOLLOWS:
100us
175 – T
C
I = I
1000
----------------------
25
150
10
LIMITED BY
PACKAGE
1ms
1
10ms
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
T
J
= MAX RATED
DC
100
50
SINGLE PULSE
o
T
C
= 25 C
0.1
10-5
10-4
10-3
t, PULSE WIDTH (s)
10-2
10-1
100
101
40
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
4
www.fairchildsemi.com
FDD8796/FDU8796 Rev. 1.1
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
0.01
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
1E-3
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
5
www.fairchildsemi.com
FDD8796/FDU8796 Rev. 1.1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FDD8870_NL
Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
FAIRCHILD
FDD8874_NL
Power Field-Effect Transistor, 35A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明