FDFMA2P853 [ONSEMI]
集成式 P 沟道 Power Trench® MOSFET 和肖特基二极管 -20V，-3.0A，120mΩ;
| 型号： | FDFMA2P853 |
| 厂家： | 
ONSEMI |
| 描述： | 集成式 P 沟道 Power Trench® MOSFET 和肖特基二极管 -20V，-3.0A，120mΩ PC 开关 光电二极管 晶体管 肖特基二极管 |
| 文件： | 总9页 (文件大小：537K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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July 2014
FDFMA2P853
®
Integrated P-Channel PowerTrench MOSFET and Schottky Diodeꢀ
General Description
Features
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
MOSFET:
-3.0 A, -20V. RDS(ON) = 120 m: @ VGS = -4.5 V
RDS(ON) = 160 m: @ VGS = -2.5 V
RDS(ON) = 240 m: @ VGS = -1.8 V
The MicroFET 2x2 package offers exceptional thermal
Schottky:
perfo
rmance for it's physlicsaize and is well suited to linear
mode applications.
VF < 0.46 V @ 500 mA
Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
RoHS Compliant
A
NC D
1
2
3
6
5
4
C
G
S
A
NC
D
C
D
MicroFET
G
S
C
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
Parameter
MOSFET Drain-Source Voltage
Ratings
-20
Units
V
V
MOSFET Gate-Source Voltage
r8
-3.0
Drain Current -Continuous
-Pulsed
(Note 1a)
(Note 1a)
ID
A
-6
VRRM
IO
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
30
V
A
1
1.4
Power dissipation for Single Operation
Power dissipation for Single Operation
(Note 1a)
(Note 1b)
PD
W
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
oC
Thermal Characteristics
RTJA
RTJA
RTJA
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
86
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
oC/W
140
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.853
FDFMA2P853
7inch
8mm
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDFMA2P853 Rev. D3 (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
VGS = 0 V,
ID = –250 PA
'BVDSS
ꢀꢀꢀ'TJ
IDSS
Breakdown Voltage Temperature
Coefficient
ID = –250 PA, Referenced to 25qC
mV/qC
–12
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = –16 V, VGS = 0 V
–1
PA
IGSS
VGS
=
8 V,
VDS = 0 V
100
nA
On Characteristics
VGS(th)
(Note 2)
Gate Threshold Voltage
–0.4 –0.7 –1.3
2
V
VDS = VGS
,
ID = –250 PA
'VGS(th)
ꢀꢀꢀ'TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
ID = –250 PA, Referenced to 25qC
mV/qC
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –3.0 A
90
120
160
240
160
m:
V
V
GS = –2.5 V, ID = –2.5 A
GS = –1.8 V, ID = –1.0 A
120
172
118
VGS= –4.5 V, ID = –3.0 A, TJ=125qC
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V, VDS = –5 V
–20
A
S
Forward Transconductance
VDS = –5 V,
ID = –3.0 A
7
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
435
80
pF
pF
pF
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
45
Switching Characteristics (Note 2)
V
DD = –10 V, ID = –1 A,
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
9
11
15
6
18
19
27
12
6
ns
ns
VGS = –4.5 V, RGEN = 6 :
ns
ns
VDS = –10 V, ID = –3.0 A,
Qg
Qgs
Qgd
4
nC
nC
nC
V
GS = –4.5 V
0.8
0.9
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.1
A
V
VSD
Drain–Source Diode Forward
Voltage
V
GS = 0 V,
IS = –1.1 A
(Note 2)
–0.8 –1.2
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = –3.0 A,
17
6
ns
dIF/dt = 100 A/µs
Qrr
nC
Schottky Diode Characteristics
Reverse Leakage
IR
VR = 5 V
TJ = 25qC
9.9
2.3
50
10
PA
mA
TJ = 125qC
TJ = 25qC
TJ = 85qC
TJ = 125qC
TJ = 25qC
TJ = 125qC
IR
Reverse Leakage
VR = 20 V
9.9
0.3
2.3
100
1
PA
mA
mA
10
VF
VF
Forward Voltage
Forward Voltage
IF = 500mA
IF = 1A
0.4
0.3
0.46
0.35
V
0.5
0.55
V
TJ = 25qC
0.49 0.54
TJ = 125qC
2
FDFMA2P853 Rev D3 (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
2
1. R
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by
TJA
TJC
design while R
is determined by the user's board design.
2
TJA
(a) MOSFET R
(b) MOSFET R
= 86°C/W when mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
TJA
= 173°C/W when mounted on a minimum pad of 2 oz copper
2
TJA
(c) Schottky R
= 86°C/W when mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
= 140°C/W when mounted on a minimum pad of 2 oz copper
TJA
TJA
(d) Schottky R
o
o
o
o
a) 86 C/W
when
b) 173 C/W
when
d) 140 C/W
when
c) 86 C/W
when
mounted
on a 1in
pad of 2 oz
copper
mounted on
a minimum
pad of
mounted on
a minimum
pad of
mounted
on a 1in
pad of 2 oz
copper
2
2
2 oz copper
2 oz copper
Scale 1: 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
3
FDFMA2P853 Rev. D3 (W)
Typical Characteristics
3
2.6
2.2
1.8
1.4
1
6
VGS = -4.5V
-3.5V
-2.5V
VGS = -1.5V
-2.0V
5
4
3
2
1
0
-3.0V
-1.8V
-1.8V
-2.0V
-2.5V
-3.0V
-1.5V
-3.5V
-4.5V
0.6
0
1
2
3
4
5
6
0
0.5
1
1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
2
2.5
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.28
1.4
1.3
1.2
1.1
1
ID = -3.0A
VGS = -4.5V
ID = -1.5A
0.22
0.16
0.1
TA = 125oC
TA = 25oC
0.9
0.8
0.04
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
6
5
4
3
2
1
0
10
VDS = -5V
VGS = 0V
1
0.1
TA = 125oC
0.01
TA = 125oC
25oC
-55oC
-55oC
0.001
25oC
0.0001
0
0.5
1
1.5
2
2.5
0
0.2 0.8
-VSD, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
4
FDFMA2P853 Rev. D3 (W)
Typical Characteristics
700
600
500
400
300
200
100
0
5
ID = -3.0A
f = 1MHz
VGS = 0 V
4
VDS = -5V
-15V
3
2
1
0
C
iss
-10V
Coss
Crss
0
1
2
3
Qg, GATE CHARGE (nC)
4
5
0
4
8
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
16
20
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
0.01
10
TJ = 125oC
1
0.1
0.001
0.0001
TJ = 125oC
TJ = 85oC
TJ = 25oC
0.01
0.001
0.00001
0.000001
TJ = 25oC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
10
15
20
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage
Figure 10. Schottky Diode Reverse Current
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
5
FDFMA2P853 Rev. D3 (W)
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-X06
6
FDFMA2P853 Rev. D3 (W)
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AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
TinyCalc™
®
Green FPS™ e-Series™
Gmax™
GTO™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
TranSiC™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
TriFault Detect™
TRUECURRENT *
EfficentMax™
ESBC™
®
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
UHC
Fairchild Semiconductor
FACT Quiet Series™
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
仙童 ™
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I68
7
FDFMA2P853 Rev. D3 (W)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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