FDG312P [ONSEMI]
P 沟道，PowerTrench® MOSFET，2.5V 指定，-1.2 A，180 mΩ;
| 型号： | FDG312P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，2.5V 指定，-1.2 A，180 mΩ 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDG312P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is produced using ON
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
• -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V
RDS(on) = 0.25 Ω @ VGS = -2.5 V.
• Low gate charge (3.3 nC typical).
• High performance trench technology for extremely
low RDS(ON)
.
Applications
• Load switch
• Battery protection
• Power management
• Compact industry standard SC70-6 surface mount
package.
S
D
1
6
5
4
D
2
3
G
D
D
SC70-6
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
A
8
±
(Note 1)
Drain Current - Continuous
- Pulsed
-1.2
-6
(Note 1a)
(Note 1b)
PD
Power Dissipation for Single Operation
0.75
0.55
W
(Note 1c)
0.48
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
θ
(Note 1)
R
Thermal Resistance, Junction-to-Ambient
260
C/W
°
JA
Package Outlines and Ordering Information
Device Marking
12
Device
Reel Size
Tape Width
Quantity
3000 units
FDG312P
7’’
8mm
.
1999 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDG312P/D
TA = 25°C unless otherwise noted
DMOS Electrical Characteristics
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250
A
-20
V
µ
DSS
Breakdown Voltage Temperature
Coefficient
ID = -250 A, Referenced to 25 C
-19
mV/ C
BV
∆
µ
°
°
∆
TJ
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
A
µ
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
100
-100
nA
nA
(Note 2)
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250
A
-0.4
-0.9
2.5
-1.5
V
µ
GS(th)
Gate Threshold Voltage
Temperature Coefficient
ID = -250 A, Referenced to 25 C
mV/ C
V
µ
°
°
∆
TJ
∆
RDS(on)
Static Drain-Source
On-Resistance
VGS = -4.5 V, ID = -1.2 A
0.135 0.18
0.200 0.29
0.187 0.25
Ω
V
GS = -4.5 V, ID = -1.2 A @125 C
°
VGS = -2.5 V, ID = -1 A
VGS = -4.5 V, VDS = -5 V
ID(on)
gFS
On-State Drain Current
-3
A
S
Forward Transconductance
VDS = -5 V, ID = -1.2 A
3.8
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
330
80
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
35
(Note 2)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -5 V, ID = -0.5 A,
7
15
22
26
12
5
ns
ns
V
GS = -4.5 V, RGEN = 6
Ω
12
16
5
ns
ns
Qg
Qgs
Qgd
VDS = -10 V, ID = -1.2 A,
VGS = -4.5 V
3.3
0.8
0.7
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-0.6
-1.2
A
V
(Note 2)
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.6 A
-0.83
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
c) 260°C/W when
mounted on a minimum
pad of 2oz copper.
b) 225°C/W when
mounted on a half
of package sized 2oz.
copper.
a) 170°C/W when
mounted on a 1 in2
pad of 2oz copper.
Scale
1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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2
Typical Characteristics
2.4
2.2
2
6
VGS= -4.5V
-3.5V
5
-3.0V
-2.5V
VGS = -2.0V
4
1.8
1.6
1.4
1.2
1
-2.5V
3
-2.0V
-3.0V
2
-3.5V
4
-4.0V
-4.5V
1
-1.5V
0.8
0
1
2
3
5
6
0
0
1
2
3
4
- I , DRAIN CURRENT (A)
D
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 2. On-Resistance Variation
Figure 1. On-Region Characteristics.
with Drain Current and Gate Voltage.
0.5
0.4
0.3
0.2
0.1
0
1.6
ID = -1.2A
ID = -0.6A
VGS= -4.5V
1.4
1.2
1
T
= 125°C
= 25°C
J
0.8
T
J
0.6
-50
1
2
3
4
5
-25
0
25
50
75
100
125
150
T
, JUNCTION TEMPERATURE (°C)
-V , GATE TO SOURCE VOLTAGE (V)
GS
J
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
1
4
3
2
1
0
VGS= 0V
T = -55°C
VDS = -5V
J
25°C
125°C
T = 125°C
J
25°C
-55°C
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
0.5
1
1.5
2
2.5
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
-V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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3
Typical Characteristics (continued)
5
1000
ID = -1.2A
VDS= -5V
-10V
-15V
4
3
2
1
0
C
iss
300
100
C
oss
C
rss
30
10
f = 1 MHz
VGS = 0 V
0
1
2
3
4
0.1
0.2
0.5
1
2
5
10
20
Q
, GATE CHARGE (nC)
g
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
24
18
12
6
10
SINGLE PULSE
RθJA= 260oC/W
TA= 25oC
3
1
0.3
0.1
VGS = -4.5V
SINGLE PULSE
Rθ
= 260°C/W
JA
0.03
0.01
TA = 25°C
0
0.1
0.2
0.5
1
2
5
10
20
50
0.0001
0.001
0.01
0.1
1
10
100
1000
-V , DRAIN-SOURCE VOLTAGE (V)
DS
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
θ
JA
θ
0.2
R
=260°C/W
JA
θ
0.1
0.05
0.1
P(pk)
0.05
0.01
0.02
Single Pulse
t1
t2
T - T = P * R
(t)
JA
θ
J
A
0.01
Duty Cycle, D = t 1/ t
2
0.005
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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