FDG6308P [ONSEMI]
双 P 沟道，1.8V，指定 PowerTrench® MOSFET，-20 V，-0.6 A，400 mΩ;
| 型号： | FDG6308P |
| 厂家： | 
ONSEMI |
| 描述： | 双 P 沟道，1.8V，指定 PowerTrench® MOSFET，-20 V，-0.6 A，400 mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2001
FDG6308P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
• –0.6 A, –20 V.
RDS(ON) = 0.40 Ω @ VGS = –4.5 V
RDS(ON) = 0.55 Ω @ VGS = –2.5 V
DS(ON) = 0.80 Ω @ VGS = –1.8 V
R
• Low gate charge
Applications
• High performance trench technology for extremely
• Battery management
• Load switch
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
S
G
D
S
G
D
D
G
S
1 or 4
2 or 5
3 or 6
6 or 3
5 or 2
4 or 1
D
G
Pin 1
S
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
–20
Units
V
V
A
VGSS
Gate-Source Voltage
± 8
ID
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
–0.6
–1.8
PD
Power Dissipation for Single Operation
0.3
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
RθJA
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.08
FDG6308P
7’’
8mm
3000 units
FDG6308P Rev C(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
–20
V
VGS = 0 V,
ID = –250 µA
Voltage
Breakdown Voltage Temperature
Coefficient
–15
∆BVDSS
∆TJ
ID = –250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V
–1
µA
nA
nA
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = –8 V, VDS = 0 V
–100
100
VGS = 8 V,
VDS = 0 V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.4
–0.9
2
–1.5
V
V
DS = VGS
,
ID = –250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = –250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –0.6 A
0.27
0.36
0.55
0.35
0.40
0.55
0.80
0.56
Ω
V
GS = –2.5 V, ID = –0.5 A
VGS = –1.8 V, ID = –0.4 A
VGS = –4.5 V, ID = –0.6 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V, VDS = –5 V
–2
A
S
Forward Transconductance
VDS = –5 V, ID = –0.6 A
2.1
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
153
25
9
pF
pF
pF
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
V
DD = –10 V, ID = 1 A,
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
5
10
27
ns
ns
VGS = –4.5 V, RGEN = 6 Ω
15
7
14
ns
1.6
1.8
0.3
0.4
3.2
2.5
ns
V
DS = –10 V, ID = –0.6 A,
Qg
Qgs
Qgd
nC
nC
nC
VGS = –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.25
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.25 A(Note 2)
–0.77 –1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad .
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG6308P Rev C (W)
Typical Characteristics
2.5
2.25
2
2
VGS = -4.5V
-3.0V
-3.5V
VGS = -1.8V
-2.5V
1.6
1.2
0.8
0.4
0
-2.0V
1.75
1.5
1.25
1
-2.0V
-1.8V
-2.5V
-3.0V
-3.5V
-4.5V
0.75
0
0.5
1
-ID, DRAIN CURRENT (A)
1.5
2
0
0.5
1
1.5
2
2.5
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.2
1
1.5
ID = -0.3 A
ID = -0.6A
VGS = -4.5V
1.4
1.3
1.2
1.1
1
0.8
0.6
0.4
0.2
TA = 125oC
0.9
0.8
0.7
TA = 25oC
-50
-25
0
25
50
75
100
125
150
1
1.5
2
2.5
3
3.5
4
4.5
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
2
VGS = 0V
25oC
VDS = -5V
TA = -55oC
1
125oC
1.5
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.5
0
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG6308P Rev C (W)
Typical Characteristics
5
200
160
120
80
VDS = -5V
f = 1MHz
VGS = 0 V
ID = -0.6A
CISS
-10V
4
3
2
1
0
-15V
COSS
40
CRSS
0
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
30
24
18
12
6
SINGLE PULSE
RθJA = 415oC/W
TA = 25oC
100µs
RDS(ON) LIMIT
1ms
1
10ms
100ms
1s
DC
0.1
VGS = -4.5V
SINGLE PULSE
RθJA = 415oC/W
T
A = 25oC
0.01
0
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 415 °C/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
0.01
T
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDG6308P Rev C (W)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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