FDG6342L [ONSEMI]

集成式负载开关;


型号：	FDG6342L
厂家：	ONSEMI
描述：	集成式负载开关开关驱动光电二极管接口集成电路
文件：	总6页 (文件大小：379K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

FDG6342L

Integrated Load Switch

General Description

This device is particularly suited for compact power

management in portable electronic equipment where 2.5V to 8V

input and 1.5A output current capability are needed. This load

switch integrates a small N-Channel power MOSFET (Q1) that

drives a large P-Channel power MOSFET (Q2) in one tiny

SC70-6 package.

Features

Max r_DS(on)= 150mΩ at V_GS= 4.5V, I_D= –1.5A

Max r_DS(on)= 195mΩ at V_GS= 2.5V, I_D= –1.3A

Max r_DS(on)= 280mΩ at V_GS= 1.8V, I_D= –1.1A

Max r_DS(on)= 480mΩ at V_GS= 1.5V, I_D= –0.9A

Applications

Power management

Load switch

Control MOSFET (Q1) includes Zener protection for ESD

ruggedness ( >4KV Human body model)

High performance trench technology for extremely low r_DS(on)

Compact industry standard SC70-6 surface mount package

RoHS Compliant

Equivalent Circuit

Vout,C1

Vin,R1

ON/OFF

R1,C1

OUT

V_DROP

Vout,C1

ON/OFF

Pin 1

SC70-6

See Application Circuit

MOSFET Maximum Ratings ^T_A= 25°C unless otherwise noted

Symbol

Parameter

Ratings

±8

Units

V_IN

V_ON/OFF

Gate to Source Voltage (Q2)

Gate to Source Voltage (Q1)

–0.5 to 8

1.5

Load Current

-Continuous

-Pulsed

(Note 2)

I_Load

(Note 2)

(Note 1a)

(Note 1b)

Power Dissipation for Single Operation

0.36

0.3

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient Single operation

(Note 1a)

(Note 1b)

350

415

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

7’’

Tape Width

8mm

Quantity

.2L

FDG6342L

SC70-6

3000units

October-2017, Rev.2

Publication Order Number:

FDG6342L/D

Electrical Characteristics ^T_J^{= 25°C unless otherwise noted}

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_IN

I_Load

I_FL

V_INBreakdown Voltage

I_D= -250µA, V_ON/OFF= 0V

Zero Gate Voltage Drain Current

Leakage Current, Forward

Leakage Current, Reverse

_IN= -6.4V, V_ON/OFF= 0V

_IN= 8V, V_ON/OFF= 0V

–1

µA

I_RL

V_IN= –8V, V_ON/OFF= 0V

–10

On Characteristics ^{(note 2)}

V_ON/OFF(th)Gate Threshold Voltage

_IN= V_ON/OFF, I_D= -250µA

0.65

0.8

125

150

200

250

2.6

1.5

150

195

280

480

4.0

V_IN= 4.5V, I_D= –1.5A

V_IN= 2.5V, I_D= –1.3A

V_IN= 1.8V, I_D= –1.1A

V_IN= 1.5V, I_D= –0.9A

Static Drain to Source On Resistance (Q2)

mΩ

r_DS(on)

_IN= 4.5V, I_D= 0.4A

Static Drain to Source On Resistance (Q1)

Ω

V_IN= 2.7V, I_D= 0.2A

3.3

5.0

Drain-Source Diode Characteristics

I_S

Maximum Continuous Drain to Source Diode Forward Current

–0.25

–1.2

V_SD

Source to Drain Diode Forward Voltage

_ON/OFF= 0V, I_S= –0.25A (Note 2)

–0.6

NOTES:

1. R

is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θJA

θJC

the user's board design.

a. 350°C/W when mounted on a

1 in pad of 2 oz copper .

b. 415°C/W when mounted on

a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDG6342LLoad Switch Application circuit

OUT

ON/OFF

LOAD

External Component Recommendation:

For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030

www.onsemi.com

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

0.5

0.4

0.3

0.2

0.1

0.0

V_IN= -1.5V

V_ON/OFF= 1.5-8V

PW = 300µs, D < 2%

V_IN= -1.8V

V_ON/OFF= 1.5-8V

PW = 300µs, D < 2%

0.4

0.3

0.2

0.1

0.0

T_J= 125^oC

T_J= 25^oC

0.0

0.4

0.8

1.2

1.6

2.0

3.5

4.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-I , (A)

Figure 1. Conduction Voltage Drop

Variation with Load Current.

Figure 2. Conduction Voltage Drop

Variation with Load Current.

0.5

0.4

0.3

0.2

0.1

0.0

0.5

0.4

0.3

0.2

0.1

0.0

V_IN= -2.5V

V_ON/OFF= 1.5-8V

PW = 300µs, D < 2%

V_IN= -4.5V

V_ON/OFF= 1.5-8V

PW = 300µs, D < 2%

T_J= 125^oC

T_J= 25^oC

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

-I , (A)

Figure 3. Conduction Voltage Drop

Variation with Load Current.

Figure 4. Conduction Voltage Drop

Variation with Load Current.

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.6

I_L= -1.3A

V_ON/OFF= 1.5-8V

PW = 300µs, D < 2%

I_L= -1.5A

V_ON/OFF= 1.5-8V

PW = 300µs, D < 2%

0.5

0.4

0.3

0.2

0.1

0.0

T_J= 125^oC

T_J= 25^oC

1.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1.0

2.0

2.5

3.0

3.5

4.0

4.5

-V_IN, INPUT VOLTAGE (V)

Figure 5. On-Resistance Variation

With Input Voltage

Figure6. On-Resistance Variation

With Input Voltage

www.onsemi.com

Dimensional Outline and Pad Layout

Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in

any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to

worldwide terms

verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s

and conditions,

specifically the warranty therein, which covers ON Semiconductor products.

www.onsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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❖

FDG6342L [ONSEMI]

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