FDG8850NZ [ONSEMI]
双 N 沟道 PowerTrench® MOSFET 30 V，0.75A，0.4 mΩ;
| 型号： | FDG8850NZ |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道 PowerTrench® MOSFET 30 V，0.75A，0.4 mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：419K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
July 2017
FDG8850NZ
Dual N-Channel PowerTrench® MOSFET
30V,0.75A,0.4Ω
Features
General Description
This dual N-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This device
has been designed especially for low voltage applications as
a replacement for bipolar digital transistors and small signal
MOSFETs. Since bias resistors are not required, this dual digital
FET can replace several different digital transistors, with differ-
ent bias resistor values.
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
Very low level gate drive requirements allowing operation
in 3V circuits(VGS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
S2
G2
D1
Q1
D1
G2
S2
S1
G1
D2
D2
G1
Q2
S1
SC70-6
Pin 1
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier tape
can be of either orientation (0 deg and 180 deg) and will not affect the functionality of the device.
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±12
Drain Current
-Continuous
-Pulsed
0.75
ID
A
2.2
0.36
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
PD
W
0.30
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient Single operation
Thermal Resistance, Junction to Ambient Single operation
(Note 1a)
(Note 1b)
350
415
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
8mm
Quantity
3000 units
.50
FDG8850NZ
7”
1
©2007 Semiconductor Components Industries, LLC.
FDG8850NZ Rev. 1
www.onsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
D = 250μA, referenced to 25°C
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
25
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24V, VGS = 0V
VGS = ±12V, VDS= 0V
1
μA
μA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
0.65
1.0
1.5
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
–3.0
mV/°C
V
GS = 4.5V, ID = 0.75A
VGS = 2.7V, ID = 0.67A
GS = 4.5V, ID = 0.75A ,TJ = 125°C
0.25
0.29
0.36
0.4
0.5
0.6
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
Ω
V
VDS = 5V, ID = 0.75A
3
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
90
20
15
120
30
pF
pF
pF
Output Capacitance
VDS = 10V, VGS = 0V, f= 1MHZ
Reverse Transfer Capacitance
25
Switching Characteristics (note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
4
1
10
10
ns
ns
VDD = 5V, ID = 0.5A,
V
GS = 4.5V,RGEN = 6Ω
Turn-Off Delay Time
Fall Time
9
18
ns
1
10
ns
Qg
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
1.03
0.29
0.17
1.44
nC
nC
nC
Qgs
Qgd
VGS =4.5V, VDD = 5V, ID = 0.75A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage VGS = 0V, IS = 0.3A
0.3
1.2
A
V
VSD
(Note 2)
0.76
Notes:
1. R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user's board design.
θJA
a. 350°C/W when mounted on a
1 in pad of 2 oz copper .
b. 415°C/W when mounted on a minimum pad
of 2 oz copper.
2
Scale 1:1 on letter size paper.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
Typical Characteristics TJ = 25°C unless otherwise noted
2.20
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 4.5V
VGS = 2.7V
VGS = 1.8V
VGS = 2.0V
1.76
VGS = 2.0V
1.32
VGS =1.8V
VGS = 3.5V
VGS = 4.5V
0.88
VGS = 2.7V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 1.5V
0.44
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0.00
0.0
0.5
1.0
1.5
2.0
0.00
0.44
0.88
1.32
1.76
2.20
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
0.8
1.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
ID = 0.75A
VGS = 4.5V
ID =0.38A
1.4
1.2
1.0
0.8
0.6
0.6
0.4
0.2
TJ = 125oC
TJ = 25oC
1
2
3
4
5
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Fi gu re 3. Nor mal ize d O n - Resi sta nce
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
2.20
2
VGS = 0V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
1
1.76
1.32
0.88
0.44
0.00
VDD = 5V
TJ = 150oC
0.1
TJ = 25oC
T = 150oC
J
0.01
1E-3
T
= 25oC
J
TJ = -55oC
T
J
= -55oC
2.0
0.0
0.5
1.0
1.5
2.5
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
Typical Characteristics TJ = 25°C unless otherwise noted
5
200
100
Ciss
ID = 0.22A
4
Coss
V
= 10V
3
2
1
0
DD
V
DD
= 5V
10
1
Crss
V
= 15V
DD
f = 1MHz
= 0V
V
GS
30
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
50
10
4
SINGLE PULSE
RθJA= 415OC/W
TA = 25OC
100μs
1
1ms
10ms
0.1
1
SINGLE PULSE
TJ = MAX RATED
100ms
RθJA = 415OC/W
TA = 25OC
1s
0.01
DC
0.1
0.005
0.0001 0.001 0.01
0.1
1
10
100 1000
0.1
1
10
100
t, PULSE WIDTH (s)
V , DRAIN to SOURCE VOLTAGE (V)
DS
Figure9. Forward Bias Safe
Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
o
RθJA = 415 C/W
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
SC−88 (SC−70 6 Lead), 1.25x2
CASE 419AD−01
ISSUE A
SYMBOL
MIN
NOM
MAX
D
0.80
A
1.10
e
e
A1
A2
0.00
0.80
0.10
1.00
b
c
0.15
0.10
1.80
1.80
1.15
0.30
0.18
2.20
2.40
1.35
D
2.00
2.10
E1
E
E
E1
e
1.25
0.65 BSC
0.36
L
0.26
0.46
L1
L2
0.42 REF
0.15 BSC
TOP VIEW
0º
4º
8º
θ
10º
θ1
q1
A2
A1
A
q
L
b
L1
q1
c
L2
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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