FDH055N15A_技术文档

DATA SHEET

www.onsemi.cn

MOSFET – N ṿᬣ,

POWERTRENCH⁾

V

R

MAX

I MAX

D

DS

DS(on)

150 V

5.9 mꢀ @ 10 V

167 A

150 V, 167 A, 5.9 mW

FDH055N15A

ᛄ៮

ꢀNꢀꢁꢁMOSFET ꢂꢃ൩ᫎਫ਼ꢂꢄꢅꢁPOWERTRENCH ꢃꢆꢇ

ꢄ，ꢈꢅꢂꢄꢃꢆꢆꢇꢈꢉꢊꢉꢋꢌꢊꢍꢎꢋꢌꢍꢏꢐꢑꢒꢎ

ꢓꢔꢕꢏꢐꢖꢗꢅ。

N-CHANNEL MOSFET

⑙ꢀ

ꢘR

= 4.8 mꢀ (͘५Ȝ)@ V = 10 V, I = 120 A

GS D

DS(on)

ꢘꢓꢔꢑꢋᇋ

ꢘꢍ᧥ᥡꢌꢒ

ꢘꢓꢕꢏꢀꢁᑠᤏ

׏

ൾꢔᥡꢍꢅ R

ꢘꢓѿꢕ

٬

ꢓꢌꢖ૤ꢗꢏѻ

ꢘꢘ

ר

RoHS ᧧Φ

G

D

S

DS(on)

TO−247−3LD

CASE 340CK

ꢘꢙ

ࡈ

Öꢈៀꢚꢄ

ڡ

MARKING DIAGRAM

ꢁ✈

ꢘꢃnꢁATX / ᣭҁ

ࡈ

/ ꢌǁ PSU ꢅ

׬

ᵅ᝔ꢖ

ꢘꢌꢛꢐᒄꢌꢜ

ꢘꢌᤚꢝ

҈٬⛽

ꢞឍꢌꢟ

ꢘᆎ५ଊꢠꢏꢡָ

ࡈ

&Z&3&K

FDH

055N15A

&Z

&3

&K

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FDH055N15A

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

 Semiconductor Components Industries, LLC, 2011

1

Publication Order Number:

July, 2023 − Rev. 5

FDH055N15ACN/D

FDH055N15A

ᣠꢂভꢃ⍭ꢄꢅ(T = 25C ꢀꢁꢀꢂꢃꢄ)

C

׶

ꢆ

ꢇꢈ

FDH055N15A

ꢉꢊ

V

ꢅꢆ－⁰ꢆꢇꢁ

᧥ꢆ－⁰ꢆꢇꢁ

150

20

30

DSS

V

− DC

GSS

− AC (f > 1 Hz)

I

D

ꢅꢆꢇἡ

167

(ꢃꢄ 1)

A

- ᪮ঽ (T = 25C, ̕℠ꢂ)

C

- ᪮ঽ (T = 100C, ̕℠ꢂ)

118

156

C

- ᪮ঽ (T = 100C, ෡᎕℠ꢂ)

C

I

ꢅꢆꢇἡ

- ௙ꢃ(ꢃꢄ 2)

668

A

mJ

DM

E

ꢄ௙ꢃ↺༉்Ჟ (ꢃꢄ 3)

ꢅꢆ

ٱ

ቂꢆdv/dt ໐ꢇ(ꢃꢄ 4)

ꢈ૧

835

AS

dv/dt

6.0

V/ns

W

P

429

(T = 25C)

C

D

- ℝꢉೃ 25C ꢊꢋ

2.86

W/C

C

T , T

࿅ꢌꢍസꢎꢈႆීꢏ

−55 ೃ + 175

300

J

STG

T

L

✈ꢐ⋪ᖅŔᣠ▨ჵ௪ꢈႆ，᢭ҋꢑꢒ1/8”，ᓡঽ 5 Ң

C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

(ꢓ૓ᚡᝧ)

ୢ᥼ꢇꢁᡕ᪗ᣠଇ⍭ൺꢇጸꢔꢕꢖŔꢇීꢏ，ꢗꢘꢙ்ꢚᔿꢛ。ୢ᥼ᡕ᪗Ûĵ᪩{℠ꢇ，෦ៀẵƽᚑꢗꢘꢈ்，ꢙ்ꢚොೄꢗꢘᔿꢛ，ᅑ

ڭ

ꢙ∰ሇ。

1.

ᙱ٧᪮ঽꢇἡ（

৚ꢐᣠ▨̡ᚈণꢈ），෡᎕℠ꢂꢇἡꢜ 156 ൩。

2. Ოꢆ⍭ൺꢇ：௙ꢃꢉႆַ℠ꢐᣠଇণꢈ。

3. I = 23.6 A，L = 3 mH，ꢊꢋ T = 25C。

AS

J

4. I  120 A，di/dt  200 A/ꢁ s，V  BV

，ꢊꢋ T = 25C。

SD

DD

DSS

J

⋍ꢀ்

׶

ꢆ

ꢇꢈ

FDH055N15A

ꢉꢊ

R

ণೃꢑꢒꢌꢍᣠଇꢇ

ণೃꢎ੣ꢌꢍᣠଇꢇ

0.35

40

C/W

ꢂ

JC

JA

ꢂ

ꢋ᎕᧧ᚖꢌꢄ៽ꢍꢎ

ꢏꢐꢑӀ

ꢒꢓ᧧ᚖ

ꢋ᎕ꢔꢕ

ꢖ᎕យẵ

਱ꢏ

ٱ

ꢗꢘꢙ

N/A

ꢚꢛ

ꢈᲟ

FDH055N15A

TO−247−3LD

N/A

30 ꢐ

www.onsemi.cn

2

FDH055N15A

ꢀᷴ⑙ꢀ(T = 25C ꢀꢁꢀꢂꢃꢄ)

C

׶

ꢆ

ꢇꢈ

Ἣᚥ᥁ꢐ

ᣠꢜꢅ ꢝꢞꢅ ᣠꢂꢅ

ꢉꢊ

ꢟឍ⑙ꢀ

BV

ꢅꢆ－⁰ꢆϛꢑꢇꢁ

V

= 0 V, I = 250 ꢁ A

150

−

V

DSS

GS

D

ꢃ BV

ϛꢑꢇꢁꢈႆꢒꢓ

I

D

= 250 ꢁ A, ꢈႆꢓ૓ 25C

−

0.1

V/C

DSS

J

/

ꢃ T

I

ꢔ᧥ꢆꢇꢁꢅꢆꢇἡ

V

= 120 V, V = 0 V

−

1

ꢁ A

nA

V

DSS

DS

GS

= 120 V, T = 150 C

500

100

C

I

᧥ꢆ -ĳꢅꢇἡ

= 20 V, V = 0 V

DS

GSS

ꢠ᫪⑙ꢀ

V

GS(th)

᧥ꢆꢕꢇꢇꢁ

V

GS

V

GS

V

DS

= V , I = 250 ꢁ A

2.0

−

4.0

5.9

−

DS

D

R

ꢅꢆೃ⁰ꢆꢖꢗොꢘꢇꢍ

ꢙ

ױ

ꢚො

= 10 V, I = 120 A

4.8

219

mꢀ

DS(on)

D

g

= 40 V, I = 120 A

−

S

FS

D

ꢡꢢ⑙ꢀ

C

ꢛͅꢇꢜ

V

= 75 V, V = 0 V, f = 1 MHz

−

7100

664

23

9445

885

35

−

pF

nC

ꢀ

iss

oss

rss

DS

GS

C

ꢛꢖꢇꢜ

֭

ױ

Āꢛꢇꢜ

C

்Ჟꢝ͓ꢛꢖꢇꢜ

10 V ꢞŔ᧥ꢆꢇꢟꢠᲟ

᧥ꢆ -⁰ꢆ᧥ꢆꢇꢟ

᧥ꢆ -ꢅꢆ“ꢡҲ”ꢇꢟ

ꢢꢣꢝꢤꢇꢍ (G−S)

V

= 75 V, V = 0 V

1159

92

oss(er.)

DS

GS

Q

= 75 V, I = 120 A V = 10 V

−

g(tot)

DS

D

,

GS

(ꢃꢄ 5)

Q

31

−

gs

Q

15

−

gs2

Q

16

−

gd

ESR

f = 1 MHz

1.2

−

ꢣꢟ⑙ꢀ

t

ොꢘꢥꢦꢞꢧ

ꢊꢘꢋԧꢞꢧ

͓ꢨꢥꢦꢞꢧ

͓ꢨ⛻ℝꢞꢧ

V

= 75 V, I = 120 A,

−

35

67

71

21

80

144

152

52

ns

d(on)

DD

GS

D

= 10 V, R = 4.7

ꢀ

G

t

r

(ꢃꢄ 5)

t

d(off)

t

f

⃯ᥡ -⁰ᥡꢤᥡ

ٱ

⑙ꢀ

I

S

ꢅꢆ -⁰ꢆꢅꢆ

ٱ

ᣠଇꢙ

ױ

᪮ঽꢇἡ

−

167

(ꢃꢄ 1)

A

I

ꢅꢆ -⁰ꢆꢅꢆ

ٱ

ᣠଇꢙ

ױ

௙ꢃꢇἡ

ꢅꢆ -⁰ꢆꢅꢆ

ٱ

ꢙ

ױ

ꢇꢁ

֭

ױ

ቂꢆꢞꢧ

−

668

1.25

−

A

V

SM

V

= 0 V, I = 120 A

−

SD

GS

SD

t

rr

= 0 V, I = 120 A, V = 75 V,

105

342

348

ns

nC

GS

F

SD

DS

dI /dt = 100 A/ꢁ s

Q

֭

ױ

ቂꢆꢇꢟ

−

rr

Q

֭

ױ

ቂꢆꢇꢟ

V

GS

= 0 V, I = 30 A, V = 75 V,

−

SD

DS

dI /dt = 100 A/ꢁ s

F

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(ꢓ૓ᚡᝧ)

ꢀꢁꢀꢂꢃꢄ，“ꢇꢩꢪሇ”ጸꢫꢔꢕꢖŔꢬꢭꢕꢮꢯꢰꢘ⛻Ŕ

ڡ

ሇ்ꢓꢓ。ୢ᥼ई⛽

׬

ꢰꢘ⛻ꢱꢲ，

ڡ

ሇ்ꢙ்⛾“ꢇꢩꢪሇ”ጸꢫ

ꢔꢭꢕሇ்ꢓꢓ⛽⛰ೄ。

5. ꢳꢴꢋꢵꢶꢐ࿅ꢌꢈႆŔ͘५ꢪሇ。

www.onsemi.cn

3

FDH055N15A

ꢝꢞꢀ்⑙ꢥ

500

100

500

V

GS

= 15.0 V

10.0 V

8.0 V

*Notes:

1. V = 10 V

DS

2. 250 ꢁ s Pulse Test

7.0 V

100

6.5 V

6.0 V

5.5 V

5.0 V

25C

175C

10

1

*Notes:

−55C

1. 250 ꢁ s Pulse Test

2. T = 25C

C

10

0.1

1

4

6

2

3

4

5

V

GS

, Gate−Source Voltage [V]

V

DS

, Drain−Source Voltage [V]

ࣞ

2. Āᩣ⑙ꢀ

ࣞ

1. ꢠ᫪Ԛি⑙ꢀ

6.5

6.0

5.5

5.0

4.5

4.0

500

100

175C

V

= 10 V

GS

25C

10

V

= 20 V

GS

*Notes:

1. V = 0 V

GS

2. 250 ꢁ s Pulse Test

*Note: T = 25C

C

1

0

50 100 150 200 250 300 350 400 450

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V

SD

, Body Diode Forward Voltage [V]

I , Drain Current [A]

D

ࣞ

4. ĳꢤᥡ

ٱ

ᵃ

ױ

ꢀիָӶꢌ⁰ᥡꢀἡ

٬

ꢁႆ

ࣞ

3. ꢠ᫪ꢀℋָӶꢌ⃯ᥡꢀἡ

٬

᧥ᥡꢀի

10000

10

C

iss

V

= 30 V

= 75 V

= 120 V

DS

8

6

4

2

0

1000

100

10

C

oss

*Notes:

1. V = 0 V

GS

2. f = 1 MHz

C

rss

C

= C + C (C = shorted)

gs gd ds

iss

oss

rss

= C + C

ds

gd

= C

*Note: I = 120 A

D

0.1

1

10

100 200

0

25

50

75

100

Q , Total Gate Charge [nC]

V

DS

, Drain−Source Voltage [V]

ࣞ

5. ꢀ඙⑙ꢀ

G

ࣞ

6. ᧥ᥡꢀ็

www.onsemi.cn

4

FDH055N15A

ꢝꢞꢀ்⑙ꢥ（ᖅꢋꢷ）

2.8

2.4

2.0

1.6

1.2

0.8

1.15

1.10

1.05

1.00

0.95

0.90

*Notes:

1. V = 0 V

*Notes:

1. V = 10 V

GS

2. I = 250 ꢁ A

D

2. I = 120 A

D

0.4

−100 −50

0

50

100

150

200

0

50

100

150

200

T , Junction Temperature [C]

J

T , Junction Temperature [C]

J

ࣞ

8. ꢠ᫪ꢀℋָӶꢌꢁႆ

ࣞ

7. ϛՏꢀիָӶꢌꢁႆ

1000

100

10

180

135

90

45

0

10 ꢁ s

100 ꢁ s

V

= 10 V

1 ms

GS

10 ms

DC

Operation in This Area

is Limited by R

1

DS(on)

Limited by Package

*Notes:

1. T = 25C

C

0.1

2. T = 175C

J

3. Single Pulse

R

= 0.35C/W

ꢂ

JC

0.01

25

50

75

100

125

150

175

1

10

100 200

T , Case Temperature [C]

C

V

DS

, Drain−Source Voltage [V]

ࣞ

9. ᣠꢂ൩͈࿅ļԚ

ࣞ

10. ᣠꢂ⃯ᥡꢀἡꢌꢦꢧꢁႆ

8

6

4

2

0

30

60

90

120

150

V

DS

, Drain to Source [V]

ࣞ

11. ᩣꢨꢀ඙ (Eoss) ꢌ⃯ᥡ - ⁰ᥡꢀի

www.onsemi.cn

5

FDH055N15A

ꢝꢞꢀ்⑙ꢥ（ᖅꢋꢷ）

1

0.1

0.5

0.2

0.1

P

DM

t

1

0.05

t

2

0.02

*Notes:

1. Z (t) = 0.35C/W Max.

0.01

Single Pulse

ꢂ

JC

2. Duty Factor, D = t /t

1

2

3. T − T = P

* Z (t)

ꢂ

JC

JM

C

DM

0.001

−5

−4

−3

−2

−1

10

1

t ，ꢹꢺ௙ꢃᓡঽꢞꢧ [Ң]

1

ࣞ

12. ɼꢢ⋍ꢩꢁᣒএ

www.onsemi.cn

6

FDH055N15A

V

GS

R

Q

L

g

V_DS

V

GS

Q

gs

gd

DUT

I

G

= ꢻᲟ

Charge

ࣞ

13. ᧥ᥡꢀ็ἫᚥꢀᢿꢌỂꢔ

R

L

V

DS

90%

V

DS

V

DD

V

GS

R

G

10%

GS

DUT

V

GS

t

d(off)

d(on)

t

r

t

f

t

on

t

off

ࣞ

14. ℋꢀꢣꢟἫᚥꢀᢿꢌỂꢔ

L

2

1

2

E_AS

+

LI_AS

V

DS

BV

DSS

I

D

I

AS

R

G

V

DD

I (t)

D

DUT

V

DD

V

GS

V

DS

(t)

t

p

Time

t

p

ࣞ

15. ∮

٭

ꢊꢀꢪꢣꢟἫᚥꢀᢿꢌỂꢔ

www.onsemi.cn

7

FDH055N15A

+

DUT

V

DS

−

I

SD

L

Driver

R

G

Same Type

as DUT

V

DD

V

GS

− dv/dt controlled by R

G

− I controlled by pulse period

SD

Gate Pulse Width

D +

Gate Pulse Period

V

GS

10 V

(Driver)

I

, Body Diode Forward Current

FM

I

di/dt

SD

(DUT)

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

DS

V

DD

V

SD

(DUT)

Body Diode

Forward Voltage Drop

ࣞ

16. ꢤᥡ

ٱ

ꢫꢬ dv/dt ꢭꢅἫᚥꢀᢿꢌỂꢔ

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the

United States and/or other countries.

www.onsemi.cn

8

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−3LD SHORT LEAD

CASE 340CK

ISSUE A

DATE 31 JAN 2019

P1

D2

A

E

P

A

A2

Q

E2

S

D1

D

E1

B

2

1

3

L1

A1

b4

L

c

(3X) b

(2X) b2

M

B A

0.25

MILLIMETERS

MIN NOM MAX

4.58 4.70 4.82

2.20 2.40 2.60

1.40 1.50 1.60

1.17 1.26 1.35

1.53 1.65 1.77

2.42 2.54 2.66

0.51 0.61 0.71

20.32 20.57 20.82

(2X) e

DIM

A

A1

A2

b

b2

b4

c

GENERIC

D

MARKING DIAGRAM*

D1 13.08

~

D2

E

0.51 0.93 1.35

15.37 15.62 15.87

AYWWZZ

XXXXXXX

E1 12.81

~

E2

e

L

4.96 5.08 5.20

5.56

15.75 16.00 16.25

3.69 3.81 3.93

3.51 3.58 3.65

XXXX = Specific Device Code

~

A

Y

= Assembly Location

= Year

WW = Work Week

ZZ = Assembly Lot Code

L1

P

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

P1 6.60 6.80 7.00

Q

S

5.34 5.46 5.58

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13851G

TO−247−3LD SHORT LEAD

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

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型号：	FDH055N15A
厂家：	ONSEMI
描述：	N 沟道 PowerTrench® MOSFET 150V，167A，5.9mΩ 局域网开关脉冲晶体管
文件：	总10页 (文件大小：455K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDH055N15A [ONSEMI]

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