FDH210N08 [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，75 V，210 A，5.5 mΩ，TO-247;
| 型号： | FDH210N08 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，75 V，210 A，5.5 mΩ，TO-247 |
| 文件： | 总9页 (文件大小：386K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N-Channel,
UniFETt
75 V, 210 A, 5.5 mW
FDH210N08
Description
www.onsemi.com
UniFET t MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology. This
MOSFET is tailored to reduce on−state resistance, and to provide
better switching performance and higher avalanche energy strength.
This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
V
R
MAX
I MAX
D
DSS
DS(ON)
75 V
5.5 mꢀ
210 A
D
S
Features
• R
= 4.65 mꢀ (Typ.), V = 10 V, I = 125 A
GS D
DS(ON)
• Low Gate Charge (Typ. 232 nC)
G
• Low C (Typ. 262 pF)
rss
• 100% Avalanche Tested
• Improved dv/dt Capability
• This Device is Pb−Free and is RoHS Compliant
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
G
D
S
TO−247−3
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FDH
210N08
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FDH210N08
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
December, 2019 − Rev. 3
FDH210N08/D
FDH210N08
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
75
Unit
V
V
DSS
Drain−Source Voltage
I
D
Drain Current
Continuous (T = 25°C)
210
A
C
Continuous (T = 100°C)
132
C
I
Drain Current
Pulsed (Note 1)
840
A
V
DM
V
GSS
Gate−Source Voltage
20
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
9375
210
mJ
A
AS
AR
I
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
46.2
4.5
mJ
V/ns
W
AR
dv/dt
P
(T = 25°C)
C
462
D
Derate Above 25°C
3.7
W/°C
°C
T , T
Operating and Storage Temperature Range
−55 to +175
300
J
STG
T
L
Maximum Lead Temperature for Soldering,
1/8″ from Case for 5 Seconds
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. L = 0.4 mH, I = 125 A, V = 50 V, R = 25 ꢀ, starting T = 25°C.
AS
DD
G
DSS
J
3. I ≤ 125 A, di/dt ≤ 260 A/ꢁ s, V ≤ BV
, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
FDH210N08
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.27
40
_C/W
_C/W
ꢂ
JC
JA
R
ꢂ
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FDH210N08
FDH210N08
TO−247
Tube
N/A
N/A
30 Units
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2
FDH210N08
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = 250 ꢁ A
75
V
DSS
GS
D
ꢃ
B
V
/
ꢃ T
Breakdown Voltage Temperature
Coefficient
= 250 ꢁ A, Referenced to 25_C
0.1
V/°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
V
GS
= 75 V, V = 0 V
20
250
200
−200
ꢁ
A
DSS
GS
= 60 V, TJ = 150_C
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
= 20 V, V = 0 V
nA
nA
GSSF
DS
I
= −20 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
R
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V , I = 250 ꢁ A
2.0
4.0
5.5
V
GS(TH)
DS(ON)
GS
D
Static Drain−Source On−Resistance
Forward Transconductance
= 10 V, I = 125 A
4.65
200
mꢀ
D
g
FS
= 25 V, I = 125 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 25 V, V = 0 V, f = 1 MHz
8743
2134
262
11340
2778
393
pF
pF
pF
ISS
GS
C
Output Capacitance
OSS
RSS
C
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn−On Rise Time
Turn-Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
= 37.5 V, I = 69 A, R = 25
ꢀ
100
410
630
290
232
58
210
830
1270
590
301
ns
ns
d(ON)
DD
D
G
(Note 4)
t
r
t
ns
d(OFF)
t
f
ns
Q
V
DS
= 60 V, I = 125 A, V = 10 V
nC
nC
nC
g
D
GS
(Note 4)
Q
gs
Q
gd
77
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
210
840
1.4
A
A
S
I
SM
V
SD
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 125 A
V
GS
S
t
rr
= 0 V, I = 125 A,
123
420
ns
nC
GS
S
dl /dt = 100 A/ꢁ s
F
Q
Reverse Recovered Charge
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
FDH210N08
TYPICAL PERFORMANCE CHARACTERISTICS
500
500
100
V
GS
15.5 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Top :
100
175oC
−55o
Bottom :
C
10
25oC
* Notes :
* Notes :
1. 250 ms Pulse Test
1. V = 25 V
DS
2. T = 255C
C
2. 250 ms Pulse Test
10
0.1
1
1
2.3
2
4
6
8
10
VDS, Drain−Source Voltage (V)
VGS, Gate−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1000
100
10
0.006
VGS = 0V
175oC
25oC
VGS = 10V
0.005
VGS = 20V
* Note : TJ = 25oC
1
0.004
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
50 100 150 200 250 300 350 400
ID, Drain Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 3. On−Resistance Variation
Figure 4. Body Diode Forward Voltage
vs. Drain Current and Gate Voltage
Variation vs. Source Current and Temperature
24000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
= C
gd
VDS = 20 V
oss
rss
ds gd
20000
16000
12000
8000
4000
0
VDS = 40 V
8
VDS = 60 V
* Note:
1. VGS = 0 V
2. f = 1 MHz
6
Ciss
4
2
Coss
Crss
* Note : ID= 125 A
150 200 250
Qg, Total Gate Charge (nC)
0
101−
100
VDS, Drain−Source Voltage (V)
101
0
50
100
30
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FDH210N08
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 0 V
2. ID = 1 mA
* Notes :
1. VGS = 10 V
2. ID = 125 A
0.5
0.0
−100
−100
−50
0
50
100
150 200
TJ, Junction Temperature(5C)
−50
0
50
100
150
200
TJ, Junction Temperature (5C)
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On− Resistance Variation
vs. Temperature
104
250
103
30 ms
200
150
100
50
100 ms
102
1 ms
101
Operation in This Area
is Limited by R
10 ms
DS(on)
Limited by Package
100
DC
* Notes :
1. T = 255C
10 1−
C
2. T = 1755C
J
3. Single Pulse
10 2−
100
0
101
102
25
50
75
100
125
(5C)
150
175
TC, Case Temperature
VDS, Drain−Source Voltage (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
1
D = 0.5
0.1
0.2
0.1
0.05
0.01
0.02
* Notes :
0.01
1. Zꢂ JC(t) = 0.27oC/W Max.
2. Duty Factor, D=t1/t2
Single pulse
3. TJM − T = PDM * ZꢂJC(t)
C
0.001
10−5
104−
10−3
102−
101−
100
101
102
t1, Rectangular Pulse Duration (sec)
Figure 11. Transient Thermal Response Curve
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5
FDH210N08
V
GS
50 kꢀ
Same Type
as DUT
Q
g
12 V
200 nF
300 nF
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
L
BVDSS
BVDSS * VDD
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DS
(t)
V
DD
V
GS
t
p
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
FDH210N08
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
UniFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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