FDH5500-F085 [ONSEMI]
55 V、75 A、5.2 mΩ、TO-247N 沟道 UltraFET®;
| 型号： | FDH5500-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 55 V、75 A、5.2 mΩ、TO-247N 沟道 UltraFET® 局域网 |
| 文件： | 总8页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, N-Channel,
UltraFET
55 V, 75 A, 7 mW
FDH5500-F085
Features
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• Typ R
• Typ Q
= 5.2 mꢀ at V = 10 V, I = 75 A
GS D
DS(on)
= 118 nC at V = 10 V
g(10)
GS
• Simulation Models
V
R
MAX
I MAX
D
DSS
DS(ON)
®
−Temperature Compensated PSPICEt and Saber Models
55 V
7 mꢀ
75 A
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
D
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
Applications
G
• DC Linear Mode Control
• Solenoid and Motor Control
• Switching Regulators
• Automotive Systems
S
DRAIN
(FLANGE)
G
D
S
JEDEC TO−247
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FDH5500
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FDH5500
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
April, 2020 − Rev. 2
FDH5500−F085/D
FDH5500−F085
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
55
Unit
V
V
DSS
DGR
Drain to Source Voltage (Note 1)
V
Gate to Gate Voltage (R = 20 kꢀ) (Note 1)
55
V
GS
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current Continuous (T < 135°C, V = 10 V)
75
A
C
GS
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
(T = 25°C)
Figure 4
864
E
mJ
W
AS
P
375
D
C
− Derate Above 25°C
2.5
W/°C
°C
T , T
Operating and Storage Temperature
−55 to +175
300
J
STG
T
L
Max. Lead Temp. for Soldering (at 1.6 mm from case for 10 sec)
Max. Package Temp. for Soldering (Package Body for 10 sec)
°C
T
pkg
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Starting T = 25°C to 175°C.
J
2. Starting TJ = 25°C, L = 0.48 mH, I = 60 A
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.4
Unit
R
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO−247, 1in copper pad area
_C/W
_C/W
ꢁ
JC
JA
2
R
30
ꢁ
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
N/A
Quantity
30 Units
FDH5500
FDH5500−F085
TO−247
Tube
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2
FDH5500−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
B
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
I
= 250 ꢂ A, V = 0 V
55
V
VDSS
D
GS
I
V
= 50 V, V = 0 V, V = 45 V
1
ꢂ
A
DSS
DS
GS
DS
V
T
= 50 V, V = 0 V, V = 45 V,
= 150_C
250
DS
C
GS
DS
I
Gate to Source Leakage Current
V
=
20 V
100
nA
V
GSS
GS
ON CHARACTERISTICS
V
R
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V , I = 250 ꢂ A
2.0
2.9
5.2
4.0
7
GS(TH)
DS(ON)
DS
D
I
D
= 75 A, V = 10 V
mꢀ
GS
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
3565
1310
395
206
118
6.2
pF
ISS
DS
GS
C
OSS
C
RSS
Output Capacitance
pF
pF
nC
nC
nC
nC
nC
Reverse Transfer Capacitance
Total Gate Charge at 20 V
Total Gate Charge 10 V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q
V
GS
V
GS
V
GS
V
DD
= 0 V to 20 V
= 0 V to 10 V
= 0 V to 2 V
V = 30 V
DD
268
153
8.1
g(TOT)
I
= 75 A
D
L
Q
g(10)
R = 0.4
ꢀ
I = 1.0 mA
g
Q
g(TH)
Q
Q
= 30 V, I = 75 A,
17.8
51
gs
D
R = 0.4
ꢀ
ꢃ
I
=
1
.
0
m
A
L
g
gd
SWITCHING CHARACTERISTICS
t
Turn-On Time
Turn-On Delay Time
Rise Time
V
D
= 30 V
185
ns
ns
ns
ns
ns
ns
on
DD
I
= 75 A
t
13.7
102
34
d(on)
R = 0.4
ꢀ
L
V
= 10 V
= 2.5 ꢀ
GS
t
r
R
GS
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
22
t
Turn-Off Time
91
off
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Voltage
Reverse Recovery Time
I
= 75 A
1
1.25
78
V
SD
SD
t
I = 75 A, dl /dt = 100 A/ꢂ s
F
60
77
ns
nC
rr
SD
Q
Reverse Recovery Charge
100
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FDH5500−F085
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
180
150
120
90
CURRENT LIMITED
BY PACKAGE
VGS = 10V
60
30
0
0
25
50
75 100 125 150 175
25
50
75
100
125
150
175
o
TC, CASE TEMPERATURE( C)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power
Figure 2. Maximum Continuous
Dissipation vs. Case Temperature
Drain Current vs Case Temperature
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.50
0.20
P
DM
0.10
0.05
0.02
t
1
0.1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
ꢁ JA C
J
DM
ꢁ
J
A
SINGLE PULSE
10−4
0.01
10−5
10−3
10−2
10−1
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
1000
100
o
T
= 25 C
C
VGS = 10V
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 − T
C
I = I
2
150
SINGLE PULSE
10
10−5
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
FDH5500−F085
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C unless otherwise noted)
C
1000
100
10
1000
If R = 0
AV
t
= (L)(I )/(1.3*RATED BV
− V )
AS
DSS DD
0
If R
AV
0
100us
1ms
t
= (L/R)ln[(I *R)/(1.3*RATED BV
− V ) +1]
AS
DSS DD
100
10
1
STARTING T = 25oC
J
10ms
DC
STARTING T = 150oC
1
J
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
T
J
= MAX RATED
o
LIMITED BY R
DS(on)
T
C
= 25 C
0.1
0.01
0.1
1
10
100
1000 5000
1
10
100 200
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive
Switching Capability
160
160
120
80
40
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 10V
ms
PULSE DURATION = 80
VDD = 5V
DUTY CYCLE = 0.5% MAX
120
80
40
0
VGS = 6V
VGS = 5.5V
TJ = 175oC
VGS = 5V
TJ = −55oC
TJ = 25oC
VGS = 4.5V
0
1
2
3
4
5
6
7
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
40
ms
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
ID = 75A
ms
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
30
20
10
0
TJ = 175oC
ID = 75A
VGS = 10V
TJ = 25oC
−80 −40
0
40
80
120
160
200
4
6
8
10
o
TJ, JUNCTION TEMPERATURE( C)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs. Junction Temperature
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5
FDH5500−F085
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C unless otherwise noted)
C
1.2
1.0
0.8
0.6
0.4
1.20
VGS = V
ID = 1mA
DS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
= 250
mA
ms
−80 −40
0
40
80
120
160 200
−80 −40
0
40
80
120
160 200
TJ, JUNCTION TEMPERATURE( C)
TJ, JUNCTION TEMPERATURE (oC)
o
Figure 11. Normalized Gate Threshold Voltage
vs. Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
8
ID = 75A
VDD = 30V
VDD = 40V
VDD = 20V
Ciss
6
1000
4
Coss
2
f = 1MHz
Crss
V
GS = 0V
100
0.1
0
1
10
80
0
20
40
60
80
100
120
140
Qg, GATE CHARGE(nC)
V
DS, DRAIN TO SOURCE VOLTAGE(V)
Figure 13. Capacitance vs. Drain to Source
Voltage
Figure 14. Gate Charge vs. Gate to Source Voltage
PSPICE is a trademark of MicroSim Corporation.
Saber is a registered trademark of Sabremark Limited Partnership.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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