FDMC2610 [ONSEMI]
N 沟道 UltraFET Trench® MOSFET 200V，9.5A，200mΩ;
| 型号： | FDMC2610 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 UltraFET Trench® MOSFET 200V，9.5A，200mΩ 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
UltraFET Trench
V
R
MAX
I MAX
D
DS
DS(ON)
200 V
200 mW @ 10 V
215 mW @ 6 V
9.5 A
200 V, 9.5 A, 200 mW
FDMC2610
General Description
D
5
4
G
This N−Channel MOSFET is a rugged gate version of onsemi‘s
advanced POWERTRENCH process. It has been optimized
for power management applications.
D
D
6
7
3
2
1
S
S
®
8
S
Features
D
• Max R
• Max R
= 200 mW at V = 10 V, I = 2.2 A
GS D
DS(on)
= 215 mW at V = 6 V, I = 1.5 A
N-CHANNEL MOSFET
Pin 1
DS(on)
GS
D
• Low Profile − 1 mm Max in a Power 33
• Pb−Free, Halide Free and RoHS Compliant
S
8
S
7
S
6
G
5
Applications
• DC−DC Conversion
D
1
D
2
D
3
D
4
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
Top
Bottom
A
Symbol
Parameter
Drain to Source Voltage
Value
200
20
Unit
V
WDFN8 3.3 y 3.3, 0.65P
CASE 511DH
V
DS
V
GS
Gate to Source Voltage
V
MARKING DIAGRAM
I
Drain Current:
A
D
Continuous (Silicon limited)
Continuous (Note 1a)
Pulsed
T
A
= 25°C
9.5
2.2
15
C
T = 25°C
FDMC
2610
ALYW
E
AS
Single Pulse Avalanche Energy (Note 3)
Power Dissipation:
6
mJ
W
P
D
T
A
= 25°C
42
2.1
C
T = 25°C (Note 1a)
T , T
Operating and Storage Junction Temperature
Range
−55 to
°C
J
STG
FDMC2610 = Specific Device Code
+150
A
= Assembly Site
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
L
YW
= Wafer Lot Number
= Assembly Start Week
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Symbol
Parameter
Value
3
Unit
†
Device
FDMC2610
Package
Shipping
3000 /
Tape & Reel
Thermal Resistance, Junction to Case
°C/W
R
q
JC
WDFN8
(Pb−Free,
Halide Free)
R
Thermal Resistance, Junction to Ambient
(Note 1a)
60
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
April, 2023 − Rev. 2
FDMC2610/D
FDMC2610
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
200
−
−
−
V
DSS
D
GS
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
199
mV/°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 160 V, V = 0 V
−
−
−
−
−
−
1
mA
DSS
GS
= 160 V, V = 0 V, T = 125°C
100
100
GS
J
I
Gate to Source Leakage Current
=
20 V, V = 0 V
nA
GSS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2
3.2
4
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−9.9
−
mV/°C
GS(th)
J
D
R
Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 2.2 A
−
−
−
−
175
188
347
7
200
215
397
−
mW
DS(on)
D
= 6 V, I = 1.5 A,
D
= 10 V, I = 2.2 A, T = 125°C
D
J
g
FS
= 5 V, I = 2.2 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 100 V, V = 0 V, f = 1 MHz
−
−
−
−
720
41
960
55
20
−
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
12
rss
R
f = 1 MHz
0.7
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
V
= 100 V, I = 2.2 A,
−
−
−
−
−
17
13
31
24
47
29
18
ns
ns
ns
ns
nC
d(on)
DD
GS
D
= 10 V, R
= 24 W
GEN
t
r
t
Turn-Off Delay Time
Fall Time
29
d(off)
t
f
16
Q
Total Gate Charge at 10 V
V
= 0 V to 10 V, V = 100 V,
12.3
g(TOT)
GS
DD
I
= 2.2 A
D
Q
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
V
DD
= 100 V, I = 2.2A
−
−
3
−
−
nC
nC
gs
D
= 100 V, I = 2.2 A
3.6
gd
D
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 2.2 A (Note 2)
−
−
−
0.8
69
1.2
104
171
V
SD
GS
S
t
I = 2.2 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
114
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed by design
JC
q
q
JA
while R
is determined by the user’s board design.
q
CA
a) 60°C/W when mounted
b) 135°C/W when mounted
on a minimum pad of 2 oz copper.
2
on a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25°C; N-ch: L = 3 mH, I = 2 A, V = 200 V, V = 10 V.
J
AS
DD
GS
www.onsemi.com
2
FDMC2610
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
1.8
15
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 7 V
= 6 V
V
GS
= 4.5 V
GS
1.6
1.4
1.2
V
GS
= 10 V
V
= 5 V
GS
V
GS
V
GS
= 7 V
V
GS
= 6 V
5
0
V
GS
= 5 V
1.0
0.8
V
GS
= 10 V
V
GS
= 4.5 V
0
1
2
3
0
3
6
9
12
15
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.4
2.2
600
500
400
300
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
D
= 1.4 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
2.0
1.8
1.6
1.4
1.2
T = 150°C
A
1.0
0.8
0.6
0.4
T = 25°C
A
200
100
I
V
= 2.2 A
D
= 10 V
GS
4
5
10
−75 −50 −25
0
25
50
75 100 125 150
6
7
8
9
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
12
9
20
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
T = 150°C
J
1
0.1
T = 150°C
J
T = 25°C
J
6
3
0
T = 25°C
J
T = −55°C
J
0.01
T = −55°C
J
1E−3
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
Figure 5. Transfer Characteristics
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3
FDMC2610
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
1000
V
DD
= 50 V
C
iss
V
DD
= 100 V
6
4
2
0
V
= 150 V
DD
100
10
C
oss
f = 1 MHz
= 0 V
C
rss
V
GS
0
3
6
9
12
15
0.1
10
, Drain to Source Voltage (V)
100
1
Q , Gate Charge (nC)
V
DS
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source
Voltage
10
8
3
2
V
GS
= 10 V
6
4
V
GS
= 6 V
T = 25°C
J
2
0
R
= 3°C/W
q
JC
1
25
50
75
100
125
150
1
0.01
0.1
, Time in Avalanche (ms)
T , Case Temperature (5C)
t
C
AV
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
40
10
500
V
= 10 V
GS
R
DS(on)
LIMITED
100
10
100 ms
1
0.1
1 ms
10 ms
100 ms
1 s
SINGLE PULSE
T = MAX RATED
R
0.01
J
DC
SINGLE PULSE
= 135°C
q
JA
1
R
= 135°C
q
JA
T = 25°C
A
0.001
0.1
0.5
−4
−3
−2
−1
0
1
2
3
10
1
10
100
700
10
10
10
10
10
10
10
t, Pulse Width (s)
V
DS
, Drain to Source Voltage (V)
Figure 12. Single Pulse Maximum Power
Dissipation
Figure 11. Forward Bias Safe Operating Area
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4
FDMC2610
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
Duty Factor: D = t / t
0.01
1
2
SINGLE PULSE
Peak T = P
× R
× r(t) + T
q
J
DM
JA A
0.003
−3
−2
−1
0
1
2
3
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05 (4X)
(0.79)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05 (3X)
8
5
0.35 0.05 (8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2019
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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