FDMC3612 [ONSEMI]
N 沟道,Power Trench® MOSFET,100V,12A,110mΩ;型号: | FDMC3612 |
厂家: | ONSEMI |
描述: | N 沟道,Power Trench® MOSFET,100V,12A,110mΩ 开关 脉冲 光电二极管 晶体管 |
文件: | 总10页 (文件大小:564K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
100 V, 12 A, 110 mW
8
S
S
S
G
7
6
5
1
D
D
2
D
3
D
4
Top
Bottom
FDMC3612, FDMC3612-L701
WDFN8 3.3x3.3, 0.65P
CASE 511DR
FDMC3612
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance and yet maintain superior switching
performance.
S
S
S
G
D
D
D
D
Features
Bottom
Top
• Max r
• Max r
= 110 mW at V = 10 V, I = 3.3 A
GS D
DS(on)
DS(on)
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
FDMC3612−L701
= 122 mW at V = 6 V, I = 3.0 A
GS
D
• Low Profile − 1 mm Max in Power 33
• 100% UIL Tested
MARKING DIAGRAM
• These Devices are Pb−Free and are RoHS Compliant
Applications
FDMC
3612
ALYW
ON AXYKK
FDMC
• DC − DC Conversion
• PSE Switch
3612
FDMC3612
FDMC3612−L701
FDMC3612= Specific Device Code
A
= Assembly Location
XY
KK
L
= 2−Digit Date Code
= 2−Digit Lot Run Traceability Code
= Wafer Lot Number
YW
= Assembly Start Week
PIN ASSIGNMENT
D 5
D 6
D 7
D 8
4
3
2
1
G
S
S
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
November, 2021 − Rev. 6
FDMC3612/D
FDMC3612, FDMC3612−L701
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Rating
Unit
V
V
DS
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
100
V
20
V
Continuous
T
C
= 25°C
12
A
I
D
Continuous (Note 1a)
Pulsed
T = 25°C
A
3.3
15
E
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
32
35
mJ
W
AS
P
T = 25°C
C
D
Power Dissipation (Note 1a)
T = 25°C
A
2.3
T , T
Operating and Storage Junction Temperature Range
−55 to + 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
RqJC
Parameter
Rating
3.5
Unit
Thermal Resistance, Junction to Case
°C/W
RqJA
Thermal Resistance, Junction to Ambient (Note 1a)
53
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
CA
2
a. 53°C/W when mounted on a 1 in pad
b. 125°C/W when mounted on a minimum
pad of 2 oz copper
of 2 oz copper
2. Starting T = 25°C; N−ch: L = 1 mH, I = 8 A, V = 90 V, V = 10 V.
J
AS
DD
GS
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2
FDMC3612, FDMC3612−L701
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
−
−
−
V
DSS
D
GS
DBV
/
Breakdown Voltage Temperature Co-
efficient
= 250 mA, referenced to 25°C
−
109
mV/°C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
−
−
−
−
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.0
2.5
4.0
V
GS(th)
GS
DS
D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−7
−
mV/°C
GS(th)
D
DT
J
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 3.3 A
−
−
−
−
92
98
110
122
212
−
mW
DS(on)
D
= 6 V, I = 3.0 A
D
= 10 V, I = 3.3 A, T = 125°C
177
13
D
J
g
FS
= 10 V, I = 3.3 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
−
−
−
−
662
40
880
55
35
−
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
23
rss
R
1.3
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 50 V, I = 3.3 A, V = 10 V,
GEN
−
−
−
−
−
−
−
−
7.4
2.8
19
15
10
34
10
21
12
−
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
2
ns
Q
Q
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 50 V, I = 3.3 A
14.4
7.9
2.3
3.7
nC
nC
nC
nC
g(TOT)
g(TOT)
DD
D
= 0 V to 5 V, V = 50 V, I = 3.3 A
DD
D
Q
Q
= 50 V, I = 3.3 A
D
gs
gd
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 3.3 A (Note 3)
−
−
−
−
0.88
0.77
34
1.2
1.2
55
V
SD
GS
S
= 0 V, I = 2 A (Note 3)
GS
S
t
Reverse Recovery Time
I = 3.3 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
37
60
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
www.onsemi.com
3
FDMC3612, FDMC3612−L701
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
3.0
15
12
9
V
= 10 V
= 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 3.5 V
GS
V
GS
2.5
2.0
1.5
1.0
0.5
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 4 V
V
GS
= 4.5 V
6
3
V
GS
= 3.5 V
V
GS
= 10 V
V
= 6 V
9
GS
0
0
3
6
12
15
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
400
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 3.3 A
D
= 10 V
GS
300
I
D
= 3.3 A
T = 25°C
J
200
100
0
T = 125°C
J
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
15
20
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
10
T = 150°C
J
12
V
DS
= 5 V
1
T = 25°C
9
6
3
0
J
T = 150°C
J
0.1
T = 25°C
J
T = −55°C
0.01
J
T = −55°C
J
0.001
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC3612, FDMC3612−L701
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
1000
I
D
= 3.3 A
Ciss
V
DD
= 50 V
6
V
= 25 V
DD
V
= 75 V
100
10
DD
4
Coss
2
f = 1 MHz
= 0 V
Crss
V
GS
0
0
2
4
6
8
10
12
14
16
0.1
1
10
100
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
30
12
V
GS
= 10 V
9
6
3
0
10
V
= 6 V
T = 25°C
GS
J
T = 100°C
J
T = 125°C
J
R
= 3.5°C/W
q
JC
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
50
1000
SINGLE PULSE
10
R
= 3.5°C/W
q
JC
100 ms
V
GS
= 10 V
T = 25°C
A
100
10
1
1 ms
THIS AREA IS
10 ms
0.1
0.01
100 ms
1 s
LIMITED BY r
DS(on)
SINGLE PULSE
10 s
T = MAX RATED
J
DC
R
= 125°C/W
q
JA
1
0.5
T = 25°C
A
0.001
10−4 10−3 10−2 10−1
1
10
100 1000
0.1
1
10
100
500
V
DS
, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMC3612, FDMC3612−L701
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
DUTY CYCLE−DESCENDING ORDER
1
0.1
D = 0.5
0.2
0.1
0.05
PDM
0.02
0.01
t1
t2
0.01
0.001
NOTES:
DUTY FACTOR: D = t / t
SINGLE PULSE
1
2
x R
R
= 125°C/W
q
JA
PEAK T = PDM x Z
+ T
JA A
q
q
J
JA
−2
10−4
10−3
10
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
ORDERING INFORMATION
†
Device
FDMC3612
Device Marking
Package Type
Reel Size
Tape Width
Shipping
FDMC3612
FDMC3612
WDFN8 3.3x3.3, 0.65P
Power 33
13”
12 mm
3000 / Tape & Reel
(Pb−Free)
FDMC3612−L701
WDFN8 3.3x3.3, 0.65P
Power 33
13”
12 mm
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE B
DATE 02 FEB 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13650G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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