FDMC8321L [ONSEMI]
N 沟道 Power Trench® MOSFET 40V，49A，2.5mΩ;
| 型号： | FDMC8321L |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 Power Trench® MOSFET 40V，49A，2.5mΩ |
| 文件： | 总9页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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February 2013
FDMC8321L
N-Channel Power Trench® MOSFET
40 V, 49 A, 2.5 mΩ
Features
General Description
Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
convertional switching PWM contollers. It has been optimized for
low gate charge, low rDS(on), fast switching speed body diode
reverse recovery performance.
Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A
Advanced Package and Silicon combination for low rDS(on)
and hign efficiency
Next Generation enhanced body diode technology,
engineered for soft recovery
Applications
100% UIL tested
RoHS Compliant
Synchronous rectifier
Load switch/Orring
Motor switch
Bottom
S
Top
Pin 1
S
S
D
D
S
S
G
S
D
D
D
D
D
G
D
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
V
V
±20
Drain Current
-Continuous
TC = 25 °C
TA = 25 °C
49
ID
-Continuous
-Pulsed
(Note 1a)
(Note 3)
22
100
A
EAS
Single Pulse Avalanche Energy
Power Dissipation
86
mJ
W
TC = 25 °C
TA = 25 °C
40
PD
Power Dissipation
(Note 1a)
2.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
3.1
53
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMC8321L
FDMC8321L
Power33
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC8321L Rev.C2
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
40
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
22
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1
1.7
-5
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
GS = 10 V, ID = 22 A
mV/°C
V
1.9
2.7
2.8
114
2.5
4.1
3.7
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 18 A
mΩ
VGS = 10 V, ID = 22 A, TJ = 125 °C
VDS = 5 V, ID = 22 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2930
1000
60
3900
1330
90
pF
pF
pF
Ω
VDS = 20 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.1
0.7
2.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
12
6.1
32
22
12
51
10
61
32
ns
ns
VDD = 20 V, ID = 22 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
4.9
44
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge at 10 V
Total Gate Charge at 5 V
Total Gate Charge
Gate to Drain “Miller” Charge
nC
nC
nC
nC
21
V
DD = 20 V, ID = 22 A
7.7
5.8
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.69
0.77
41
1.2
1.3
65
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 22 A
trr
Reverse Recovery Time
ns
IF = 22 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
20
33
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θJA
θJC
θCA
the user's board design.
125 °C/W when mounted on
a minimum pad of 2 oz copper
53 °C/W when mounted on a
1 in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3.Starting T = 25 °C; N-ch: L = 0.3 mH, I = 24 A, V
= 36 V, V = 10 V.
J
AS
DD
GS
FDMC8321L Rev.C2
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
100
6
5
4
3
2
1
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VGS = 3.5 V
80
VGS = 10 V
VGS = 4.5 V
60
VGS = 3.5 V
VGS = 4 V
40
VGS = 4 V
VGS = 3 V
20
PULSE DURATION = 80 μs
VGS = 10 V
VGS = 4.5 V
60
DUTY CYCLE = 0.5% MAX
0
0
0.5
1.0
1.5
2.0
0
20
40
80
100
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
10
ID = 22 A
GS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
ID = 22 A
V
8
6
4
2
0
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
100
100
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
80
60
40
20
0
10
1
VDS = 5 V
TJ = 150 o
C
TJ = 150 o
C
TJ = 25 oC
0.1
TJ = 25 o
C
0.01
0.001
TJ = -55 o
C
TJ = -55 o
C
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
FDMC8321L Rev.C2
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
10000
1000
100
ID = 22 A
8
Ciss
VDD = 24 V
VDD = 16 V
6
4
2
0
Coss
VDD = 20 V
f = 1 MHz
= 0 V
V
GS
Crss
10
0.1
0
10
20
30
40
50
1
10
40
Q , GATE CHARGE (nC)
g
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
100
100
80
60
40
20
0
VGS = 10 V
VGS = 4.5 V
TJ = 25 oC
TJ = 100 oC
10
Limited by package
RθJC = 3.1 oC/W
TJ = 125 o
C
1
0.01
0.1
1
10
100
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
1000
200
100
SINGLE PULSE
θJA = 125 oC/W
R
T
A = 25 oC
1 ms
100
10
10
1
10 ms
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
1 s
SINGLE PULSE
TJ = MAX RATED
0.1
0.01
R
θJA = 125 oC/W
TA = 25 oC
10 s
DC
1
0.5
10-3
10-2
10-1
1
10
100
1000
0.01
0.1
1
10
100200
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
FDMC8321L Rev.C2
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 125 oC/W
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
0.001
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
FDMC8321L Rev.C2
www.fairchildsemi.com
5
Dimensional Outline and Pad Layout
FDMC8321L Rev.C2
www.fairchildsemi.com
6
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IntelliMAX™
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Sync-Lock™
®*
®
tm
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PowerTrench
PowerXS™
Programmable Active Droop™
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QS™
Quiet Series™
RapidConfigure™
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SM
TinyBoost™
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®
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and Better™
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FDMC8321L Rev.C2
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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