FDME910PZT [ONSEMI]
P 沟道，PowerTrench® MOSFET，-20V，-8A，24mΩ;
| 型号： | FDME910PZT |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-20V，-8A，24mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDME910PZT
P-Channel PowerTrench® MOSFET
General Description
-20 V, -8 A, 24 mΩ
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance and zener
diode protection against ESD. The MicroFET 1.6x1.6 Thin
package offers exceptional thermal performance for its physical
size and is well suited to switching and linear mode applications.
Features
Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
Low profile: 0.55 mm maximum in the new package MicroFET
1.6x1.6 Thin
HBM ESD protection level > 2 kV typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
G
D
Bottom Drain Contact
D
D
D
1
2
3
6
5
4
D
D
S
S
Pin 1
S
D
D
G
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
-20
V
V
±8
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
TA = 25°C
(Note 1a)
-8
-32
ID
A
TA = 25°C
TA = 25°C
(Note 1a)
(Note 1b)
2.1
PD
W
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1a)
60
°C/W
175
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8 mm
Quantity
E91
FDME910PZT
MicroFET 1.6x1.6 Thin
7 ’’
5000 units
©2012 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDME910PZT/D
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
-20
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
-16
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-1
μA
μA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
-0.4
-0.6
2.7
-1.5
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = -250 μA, referenced to 25 °C
mV/°C
V
GS = -4.5 V, ID = -8 A
20
25
32
26
38
24
31
45
36
VGS = -2.5 V, ID = -7 A
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = -1.8 V, ID = -6 A
VGS = -4.5 V, ID = -8 A,TJ = 125°C
VDD = -5 V, ID = -8 A
gFS
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1586
236
2110
355
330
pF
pF
pF
VDS = -10 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
218
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
9
18
20
ns
ns
VDD = -10 V, ID = -8 A,
VGS = -4.5 V, RGEN = 6 Ω
11
Turn-Off Delay Time
Fall Time
87
46
15
2.2
3.6
139
74
ns
ns
Qg
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
21
nC
nC
nC
V
GS = -4.5 V, VDD = -10 V,
Qgs
Qgd
ID = -8 A
Drain-Source Diode Characteristics
V
GS = 0 V, IS = - 8 A
(Note 2) -0.57
(Note 2)
-0.8
-0.7
17
-1.2
-1.2
31
V
V
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = -1.8 A
trr
Reverse Recovery Time
ns
nC
IF = -8 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
4.1
10
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θJA
θJC
θCA
the user's board design.
a. 60 °C/W when mounted on
a 1 in pad of 2 oz copper.
b. 175 °C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
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2
Typical Characteristics TJ = 25 °C unless otherwise noted
32
3
2
1
0
VGS = -4.5 V
VGS = -1.5 V
VGS = -3 V
24
VGS = -1.8 V
VGS = -2.5 V
VGS = -2.5 V
VGS = -4.5 V
16
VGS = -1.8 V
VGS = -3 V
8
0
VGS = -1.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
1
2
3
0
8
16
24
32
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
120
1.4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = -8 A
GS = -4.5 V
V
ID = -8 A
1.2
1.0
0.8
0.6
80
40
0
TJ = 125 o
C
TJ = 25 o
C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
100
32
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
10
1
VDS = -5 V
24
16
8
TJ = 150 o
C
TJ = 150 o
C
TJ = 25 oC
0.1
TJ = 25 o
C
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
0
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted
4.5
3000
1000
ID = -8 A
Ciss
VDD = -8 V
3.0
VDD = -10 V
Coss
VDD = -12 V
1.5
Crss
f = 1 MHz
= 0 V
V
GS
0.0
100
0.1
0
4
8
12
16
1
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
10-1
50
10
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
10-10
VDS = 0 V
1 ms
TJ = 125 oC
1
0.1
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1 s
TJ = 25 o
C
10 s
DC
R
θJA = 175 oC/W
T
A = 25 oC
0.01
0
3
6
9
12
15
0.01
0.1
1
10
100
-VDS, DRAIN to SOURCE VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure9. G a t e L e a k a g e C u r r e n t
vs Gate to Source Voltage
Figure 10. Forward Bias Safe
Operating Area
100
10
1
SINGLE PULSE
RθJA = 175 oC/W
TA = 25 o
C
0.1
10-3
10-2
10-1
100
t, PULSE WIDTH (sec)
101
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.01
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
SINGLE PULSE
θJA = 175 oC/W
(Note 1b)
NOTES:
DUTY FACTOR: D = t /t
R
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-3
10-2
10-1
100
101
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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