FDMS001N025DSD [ONSEMI]
25 V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET;
| 型号： | FDMS001N025DSD |
| 厂家： | 
ONSEMI |
| 描述： | 25 V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET |
| 文件： | 总13页 (文件大小：447K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDMS001N025DSD
PowerTrench) Power Clip
25 V Asymmetric Dual N−Channel
MOSFET
General Description
www.onsemi.com
This device includes two specialized N−Channel MOSFETs in a
dual package. The switch node has been internally connected to enable
easy placement and routing of synchronous buck converters. The
control MOSFET (Q1) and synchronous SyncFET (Q2) have been
designed to provide optimal power efficiency.
1
Features
Q1: N−Channel
• Max r
• Max r
= 3.25 mW at V = 10 V, I = 19 A
GS D
DS(on)
= 4 mW at V = 4.5 V, I = 17 A
PQFN8
POWER CLIP
CASE 483AR
DS(on)
GS
D
Q2: N−Channel
• Max r
= 0.92 mW at V = 10 V, I = 38 A
GS D
DS(on)
• Max r
= 1.20 mW at V = 4.5 V, I = 34 A
GS D
DS(on)
PAD9
V+(HSD)
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses
• MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
HSG
GR
LSG
SW
PAD10
GND(LSS)
SW
SW
V+
V+
Applications
• Computing
• Communications
• General Purpose Point of Load
LSG
SW
HSG
GR
V+
SW
SW
SW
V+
PIN ASSIGNMENT
Pin
1
Name
HSG
GR
Description
High Side Gate
Gate Return
2
3,4,9 V+(HSD) High Side Drain
5,6,7
8
SW
Switching Node, Low Side Drain
Low Side Gate
LSG
10 GND(LSS) Low Side Source
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
October, 2017 − Rev. 0
FDMS001N025DSD/D
FDMS001N025DSD
Table 1. MAXIMUM RATINGS T = 25°C unless otherwise noted
A
Symbol
Parameter
Q1
25 (Note 1)
+16/−12V
69
Q2
25
Units
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current −Continuous
−Continuous
V
V
A
+16/−12V
165
I
D
T = 25°C (Note 2)
C
T
C
= 100°C (Note 2)
43
104
−Continuous
T = 25°C 19 (Note 7a)
38 (Note 7b)
1240
A
−Pulsed
T = 25°C (Note 3)
381
121
26
A
E
Single Pulse Avalanche Energy
(Note 4)
337
mJ
W
AS
P
Power Dissipation for Single Operation
T
C
= 25°C
42
D
Power Dissipation for Single Operation
T = 25°C 2.1 (Note 7a)
A
2.3 (Note 7b)
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The continuous V rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be
DS
applied.
2. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
3. Pulsed Id please refer to Figure 11 and Figure 24 SOA graphs for more details.
4. Q1: E of 121 mJ is based on starting T = 25°C; N−ch: L = 3 mH, I = 9 A, V = 25 V. 100% tested at L = 0.1 mH, I = 29 A.
AS
J
AS
DD
AS
Q2: E of 337 mJ is based on starting T = 25°C; N−ch: L = 3 mH, I = 15 A, V = 25 V. 100% tested at L = 0.1 mH, I = 48 A.
AS
J
AS
DD
AS
Table 2. THERMAL CHARACTERISTICS
Symbol
Parameter
Q1
4.9
Q2
Units
Thermal Resistance, Junction to Case
3.0
°C/W
R
q
JC
R
q
JA
R
q
JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
60 (Note 7a)
55 (Note 7b)
130 (Note 7c) 120 (Note 7d)
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 1 mA, V = 0 V
Q1
Q2
25
25
V
DSS
D
GS
= 1 mA, V = 0 V
D
GS
DBV
DT
/
Breakdown Voltage Temperature
Coefficient
I
I
= 10 mA, referenced to 25°C
= 10 mA, referenced to 25°C
Q1
Q2
15
28
mV/°C
DSS
D
J
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 20 V, V = 0 V
Q1
Q2
1
mA
mA
DSS
DS
GS
= 20 V, V = 0 V
500
DS
GS
I
V
V
= +16 V/−12 V, V = 0 V
Q1
Q2
100
100
nA
nA
GSS
GS
DS
= +16 V/−12 V, V = 0 V
GS
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
V
= V , I = 320 mA
Q1
Q2
0.8
1.0
1.3
1.5
2.5
3.0
V
GS
DS
D
= V , I = 1 mA
GS
DS
D
DV
DT
/
Gate to Source Threshold Voltage
Temperature Coefficient
I
= 1 mA, referenced to 25°C
= 10 mA, referenced to 25°C
Q1
Q2
−4
−3
mV/°C
mW
GS(th)
D
J
I
D
r
Drain to Source On Resistance
V
V
V
= 10 V, I = 19 A
Q1
2.5
3.0
3.5
3.25
4.0
DS(on)
GS
GS
GS
D
= 4.5 V, I = 17 A
D
= 10 V, I = 19 A,T =125°C
5.0
D
J
V
GS
V
GS
V
GS
= 10 V, I = 38 A
Q2
0.70
0.92
0.96
0.92
1.20
1.38
D
= 4.5 V, I = 34 A
D
= 10 V, I = 38 A,T = 125°C
D
J
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2
FDMS001N025DSD
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max Units
ON CHARACTERISTICS
g
FS
Forward Transconductance
V
V
= 5 V, I = 19 A
Q1
Q2
98
S
DS
D
= 5 V, I = 38 A
262
DS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1:
Q1
Q2
1370
5105
pF
pF
pF
iss
V
DS
= 13 V, V = 0 V, f = 1 MHZ
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q1
Q2
625
oss
Q2:
1810
V
DS
= 13 V, V = 0 V, f = 1 MHZ
GS
C
Q1
Q2
44
rss
173
R
Q1
Q2
0.1
0.1
0.4
0.3
1.2
1.0
W
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Q1:
Q1
Q2
8
16
26
ns
ns
d(on)
V
DD
= 13 V, I = 19 A, R
= 6 W
= 6 W
15
D
GEN
t
r
Rise Time
Q1
Q2
2
5
10
10
Q2:
V
DD
= 13 V, I = 38 A, R
D
GEN
t
Turn−Off Delay Time
Fall Time
Q1
Q2
22
39
34
62
ns
d(off)
t
f
Q1
Q2
2
4
10
10
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
10 V
= 0 V to
= 0 V to
Q1
Q1
Q2
21
75
30
nC
nC
nC
nC
g
g
GS
V
DD
= 13 V, I = 19 A
104
D
V
GS
Q1
Q2
9.7
35
14
49
Q2
4.5 V
V
DD
= 13 V, I = 38 A
D
Q
Q1
Q2
2.9
12
gs
gd
Q
Q1
Q2
2.0
7.9
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Volt-
age
V
V
= 0 V, I = 19 A (Note 6)
Q1
Q2
0.8
0.8
1.2
1.2
V
A
SD
GS
S
= 0 V, I = 38 A (Note 6)
GS
S
I
Diode continuous forward current
Diode pulse current
T
= 25°C (Note 2)
= 25°C (Note 3)
C
Q1
Q2
69
S
C
125
I
T
Q1
Q2
381
A
S,Pulse
1240
t
Reverse Recovery Time
Reverse Recovery Charge
Q1
Q1
Q2
27
39
44
62
ns
nC
rr
I = 19 A, di/dt = 100 A/ms
F
Q2
Q
Q1
Q2
12
55
21
87
rr
I = 38 A, di/dt = 300 A/ms
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
5. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is determined
q
q
CA
JA
by the user’s board design.
6. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDMS001N025DSD
FDMS001N025DSD
Power Clip 56
13”
12 mm
3000 units
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3
FDMS001N025DSD
(Note 7a)
(Note 7b)
(Note 7c)
(Note 7d)
2
7. a) 60°C/W when mounted on a 1 in pad of 2 oz copper
2
b) 55°C/W when mounted on a 1 in pad of 2 oz copper
c) 130°C/W when mounted on a minimum pad of 2 oz copper
d) 120°C/W when mounted on a minimum pad of 2 oz copper
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FDMS001N025DSD
TYPICAL CHARACTERISTICS (Q1 N−Channel) T = 25°C unless otherwise noted
J
90
75
60
45
30
15
0
6
V
GS = 10 V
VGS = 2.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
5
4
3
2
1
0
VGS = 4.5 V
GS = 3.5 V
VGS = 3 V
V
V
GS = 2.5 V
VGS = 3 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
V
GS = 4.5 V
VGS = 3.5 V
0.0
0.5
1.0
1.5
2.0
0
15
30
45 60
75
90
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
20
ID = 19 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
ID = 19 A
15
10
5
TJ = 125 o
C
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
1
2
3
4
5
6
7
8
9
1
TJ, JUNCTION TEMPERATURE o(C)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
100
90
VGS = 0 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
75
10
VDS = 5 V
TJ = 150 o
C
60
45
30
15
0
1
0.1
TJ = 25 oC
TJ = −55oC
TJ = 150 o
C
TJ = 25 o
C
0.01
TJ = −55oC
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1
0
1
2
3
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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FDMS001N025DSD
TYPICAL CHARACTERISTICS (Q1 N−Channel) T = 25°C unless otherwise noted
J
10
8
10000
ID = 19 A
VDD = 10 V
Ciss
1000
100
10
VDD = 13 V
Coss
6
VDD = 15 V
4
Crss
2
f = 1 MHz
VGS = 0 V
0
1
0
5
10
15
20
25
0.1
1
10
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source
Voltage
100
10
1
80
R
qJC = 4.9 oC/W
60
40
20
0
VGS = 10 V
VGS = 4.5 V
TJ = 25 oC
TJ = 100 o
C
TJ = 125 o
C
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATUREo(C)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
500
10000
1000
100
SINGLE PULSE
qJA = 4.9oC/W
10 ms
R
100
10
1
T
A = 25 oC
100 ms
THIS AREA IS
LIMITED BY r DS(on)
1 ms
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
R
qJC = 4.9oC/W
C = 25 oC
CURVE BENT TO
MEASURED DATA
T
0.1
0.1
10
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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FDMS001N025DSD
TYPICAL CHARACTERISTICS (Q1 N−Channel) T = 25°C unless otherwise noted
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
SINGLE PULSE
NOTES:
(t) = r(t) x R
Z
R
qJC
qJC
o
= 4.9 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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FDMS001N025DSD
TYPICAL CHARACTERISTICS (Q2 N−Channel) T = 25°C unless otherwise noted
J
90
75
60
45
30
15
0
15
VGS = 10 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
V
GS = 2.5 V
12
9
V
GS = 4.5 V
GS = 3.5 V
VGS = 3 V
V
6
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
3
VGS = 2.5 V
0
0.0
0.1
0.2
0.3
0
15
30
45
60
75
90
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 14. On Region Characteristics
Figure 15. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
6
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
I
D = 38 A
VGS = 10 V
5
ID = 38 A
4
3
2
TJ = 125 o
C
1
0
TJ = 25 o
C
1
2
3
4
5
6
7
8
9
10
−75 −50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATUREo(C)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 16. Normalized On Resistance vs.
Junction Temperature
Figure 17. On−Resistance vs. Gate to Source
Voltage
90
90
VGS = 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
75
10
V
DS = 5 V
TJ = 125 o
C
60
45
30
15
0
1
0.1
TJ = 25 o
C
TJ = 125 o
C
TJ = 25 o
C
TJ = −55oC
0.01
0.001
TJ = −55oC
3
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode Forward
Voltage vs. Source Current
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FDMS001N025DSD
TYPICAL CHARACTERISTICS (Q2 N−Channel) T = 25°C unless otherwise noted
J
10000
10
8
Ciss
ID = 38 A
VDD = 10 V
Coss
1000
100
10
6
V
DD = 13 V
4
VDD = 15 V
Crss
2
f = 1 MHz
VGS = 0 V
0
0.1
1
10
25
0
16
32
48
64
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs. Drain to Source
Voltage
100
10
1
200
R
qJC = 3.0 oC/W
160
120
80
40
0
TJ = 25 o
C
V
GS = 10 V
TJ = 100 o
C
VGS = 4.5 V
TJ = 125 oC
0.001 0.01
0.1
1
10
100
1000
25
50
75
100
125
150
TC, CASE TEMPERATURE o(C)
tAV, TIME IN AVALANCHE (ms)
Figure 22. Unclamped Inductive Switching
Capability
Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
2000
1000
100000
10000
1000
100
SINGLE PULSE
qJC = 3.0 oC/W
R
10 ms
T
C = 25 oC
100
100 ms
THIS AREA IS
10
1 ms
LIMITED BY rDS(on)
SINGLE PULSE
TJ= MAX RATED
10 ms
100 ms
1
R
qJC = 3.0 oC/W
TC = 25 oC
CURVE BENT TO
MEASURED DATA
0.1
0.1
10
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
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FDMS001N025DSD
TYPICAL CHARACTERISTICS (Q2 N−Channel) T = 25°C unless otherwise noted
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
R
qJC
qJC
SINGLE PULSE
o
= 3.0 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 26. Junction−to−Case Transient Thermal Response Curve
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FDMS001N025DSD
TYPICAL CHARACTERISTICS (continued)
ON Semiconductor’s SyncFET process embeds a
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
Schottky diode in parallel with PowerTrench MOSFET.
This diode exhibits similar characteristics to a discrete
external Schottky diode in parallel with a MOSFET.
Figure 27 shows the reverses recovery characteristic of the
FDMS001N025DSD.
10−2
45
40
35
30
TJ = 125 o
C
10−3
10−4
10−5
10−6
T
J = 100 o
C
25
didt = 239 A/ms
20
15
10
5
T
J = 25 o
C
0
−5
0
5
10
15
20
25
100
150
200
250
300
350
400
VDS, REVERSE VOLTAGE (V)
TIME (ns)
Figure 27. FDMS001N025DSD SyncFET Body
Diode Reverse Recovery Characteristic
Figure 28. SyncFET Body Diode Reverse Leakage
vs. Drain−Source Voltage
PowerTrench is a registered trademark of Semiconductor Components Industries, LLC.
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5x6, 1.27P
CASE 483AR
ISSUE A
DATE 21 MAY 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13666G
PQFN8 5x6, 1.27P
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