FDMS7658AS [ONSEMI]
N 沟道，PowerTrench® SyncFET™，30V，176A，1.9mΩ;
| 型号： | FDMS7658AS |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® SyncFET™，30V，176A，1.9mΩ |
| 文件： | 总8页 (文件大小：632K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDMS7658AS
N-Channel PowerTrench® SyncFETTM
30 V, 176 A, 1.9 mΩ
Features
General Description
The FDMS7658AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A
Max rDS(on) = 2.2 mΩ at VGS = 7 V, ID = 26 A
Advanced Package and Silicon Combination for Low rDS(on)
and High Efficiency
SyncFETTM Schottky Body Diode
MSL1 Robust Package Design
100% UIL Tested
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Side Rectification
RoHS Compliant
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
(Note 4)
(Note 5)
(Note 5)
(Note 1a)
(Note 6)
±20
TC = 25 °C
TC = 100 °C
TA = 25 °C
176
112
ID
A
-Continuous
29
-Pulsed
670
dv/dt
EAS
MOSFET dv/dt
1.5
V/ns
mJ
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
(Note 3)
162
TC = 25 °C
TA = 25 °C
89
PD
W
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.4
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS7658AS
FDMS7658AS
Power 56
3000 units
1
©2012 Semiconductor Components Industries, LLC.
October-2017, Rev.2
Publication Order Number:
FDMS7658AS/D
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
23
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
500
100
μA
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
nA
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
D = 10 mA, referenced to 25 °C
GS = 10 V, ID = 28 A
1.2
1.7
-5
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
mV/°C
V
1.5
1.7
1.9
2.0
181
1.9
2.2
2.4
2.6
VGS = 7 V, ID = 26 A
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 4.5 V, ID = 23 A
VGS = 10 V, ID = 28 A, TJ = 125 °C
VDS = 5 V, ID = 28 A
gFS
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
5525
2020
150
7350
2685
230
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.1
0.4
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
20
8
36
17
ns
ns
V
DD = 15 V, ID = 28 A,
VGS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
43
5
70
ns
10
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
78
35
16.4
6.6
109
49
nC
nC
nC
nC
Qg
VGS = 0 V to 4.5 V
V
DD = 15 V,
ID = 28 A
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.38
0.74
46
0.9
1.3
75
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 28 A
trr
Reverse Recovery Time
ns
IF = 28 A, di/dt = 300 A/μs
Qrr
Reverse Recovery Charge
73
117
nC
Notes:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a. 50 °C/W when mounted on a
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 162 mJ is based on starting T = 25 °C, L = 1 mH, I = 18 A, V = 27 V, V = 10 V. 100% test at L = 0.3 mH, I = 28 A.
AS
J
AS
DD
GS
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
6. Pulsed Id please refer to Fig 11 SOA graph for more details.
www.onsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted.
150
5
4
3
2
1
0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
VGS = 3 V
120
VGS = 4 V
VGS = 3.5 V
90
VGS = 3.5 V
VGS = 3 V
60
VGS = 4 V
30
VGS = 10 V
PULSE DURATION = 80 μs
VGS = 4.5 V
60
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
2.0
0
30
90
120
150
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
8
1.6
ID = 28 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 28 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
6
4
2
0
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
150
300
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
100
120
90
60
30
0
TJ = 125 o
C
10
VDS = 5 V
TJ = 25 o
C
1
TJ = 125 o
C
0.1
TJ = -55 o
C
TJ = 25 o
C
0.01
TJ = -55 o
C
0.001
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
10000
1000
ID = 28 A
8
Ciss
VDD = 10 V
VDD = 20 V
Coss
6
4
2
0
VDD = 15 V
Crss
f = 1 MHz
100
50
V
GS
= 0 V
0
20
40
Q , GATE CHARGE (nC)
60
80
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
200
160
120
80
50
VGS = 10 V
TJ = 25 oC
10
VGS = 4.5 V
TJ = 100 o
C
RθJC = 1.4 oC/W
40
TJ = 125 o
C
0
25
1
0.01
50
75
100
125
150
0.1
1
10
100
500
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Case Temperature
100000
1000
100
10
SINGLE PULSE
θJC = 1.4 oC/W
C = 25 oC
R
10 μs
T
10000
1000
100
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
1
10 ms
100 ms
SINGLE PULSE
T
J = MAX RATED
θJC =1.4 oC/W
0.1
0.01
R
CURVES BENT TO
MEASURED DATA
T
C = 25 o
C
0.1
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
0.01
0.1
1
10
100
1
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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4
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
SINGLE PULSE
Z
θJC
θJC
o
R
= 1.4 C/W
θJC
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
0.001
10-5
10-4
10-3
t, RECTANGULAR PULSE DURATION (sec)
10-2
10-1
1
Figure 13. Junction-to-Case Transient Thermal Response Curve
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5
Typical Characteristics (continued)
TM
SyncFET Schottky body diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
ON Semiconductor’s SyncFETTM process embeds
Schottky diode in parallel with PowerTrench MoSFET. This
a
diode exhibits similar characteristics to a discrete external
Schottky diode in parallel with
a
MOSFET. Figure 14
characteristic of the
shows
the
reverses
recovery
FDMS7658AS.
10-2
30
25
20
15
10
5
TJ = 125 o
C
C
10-3
10-4
10-5
10-6
TJ = 100 o
di/dt = 300 A/μs
TJ = 25 o
C
0
-5
0
0
5
10
15
20
25
30
50
100
150
200
TIME (ns)
VDS, REVERSE VOLTAGE (V)
Figure 14. FDMS7658AS SyncFETTM Body
Diode Reverse Recovery Characteristic
Figure 15. SyncFETTM Body Diode Revers-
es Leakage vs. Drain-Source Voltage
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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