FDN342P [ONSEMI]
P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-2A，80mΩ;
| 型号： | FDN342P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-2A，80mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel,
POWERTRENCH®, Specified
D
S
2.5 V
G
SOT−23/SUPERSOT−3
CASE 527AG
FDN342P
General Description
This P−Channel 2.5 V specified MOSFET is produced in a rugged
gate version of onsemi’s advanced POWERTRENCH process. It has
been optimized for power management applications for a wide range
of gate drive voltages (2.5 V − 12 V).
D
Applications
S
G
• Load Switch
• Battery Protection
• Power Management
MARKING DIAGRAM
XXXMG
Features
G
• −2 A, −20 V
♦ R
♦ R
= 0.08 W @ V = −4.5 V
GS
DS(ON)
XXX = Specific Device Code
= 0.13 W @ V = −2.5 V
DS(ON)
GS
M
G
= Month Code
= Pb−Free Package
• Rugged gate rating ( 12 V).
• High Performance Trench Technology for Extremely Low R
• Enhanced power SUPERSOTt−3 (SOT−23)
DS(ON)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
March, 2022 − Rev. 3
FDN342P/D
FDN342P
ABSOLUTE MAXIMUM RATINGS
T = 25°C unless otherwise noted
A
Symbol
Parameter
Ratings
−20
Unit
V
Drain−Source Voltage
V
DSS
GSS
Gate−Source Voltage
12
V
V
Drain Current
Continuous (Note 1a)
Pulsed
A
I
D
−2
−10
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
W
P
D
0.5
0.46
Operating and Storage Junction Temperature Range
_C
−55 to +150
T , T
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
Ratings
250
Unit
°C/W
°C/W
R
θ
JA
JC
75
R
θ
ELECTRICAL CHARACTERISTICS
T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
= 0 V, I = −250 mA
−20
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature Coefficient
I = −250 mA, Referenced to 25_C
D
−
−16
mV/_C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate−Body Leakage Current, Forward
Gate−Body Leakage, Reverse
V
DS
V
GS
V
GS
= −16 V, V = 0 V
−
−
−
−
−
−
−1
mA
nA
nA
DSS
GS
I
= 12 V, V = 0 V
100
GSSF
GSSR
DS
I
= −12 V, V = 0 V
−100
DS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
DS
= V I = −250 mA
GS, D
−0.6 −1.05
−1.5
V
GS(th)
Gate Threshold Voltage Temperature Coefficient I = −250 mA, Referenced to 25_C
−
3
−
mV/_C
DVGS(th)
DTJ
D
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= −4.5 V, I = −2 A
−
−
0.062
0.086
0.099
−
0.08
0.14
0.13
−
W
DS(on)
D
= −4.5 V, I = −2 A, T = 125_C
D
J
= −2.5 V, I = −1.5 A
−
D
I
On−State Drain Current
= −4.5 V, V = −5 V
−5
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= −5 V, I = −5 A
7
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −10 V, V = 0 V, f = 1.0 MHz
−
−
−
635
175
75
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
www.onsemi.com
2
FDN342P
ELECTRICAL CHARACTERISTICS (continued)
T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= −10 V, I = −1 A,
−
−
−
−
−
−
−
20
8
35
16
18
32
9
ns
ns
d(on)
DD
GS
D
= −4.5 V, R
= 6 W
GEN
t
r
t
9
ns
d(off)
t
f
19
6.3
1.5
1.7
ns
Q
V
DS
= −10 V, I = −2 A, V = −4.5 V
nC
nC
nC
g
D
GS
Q
−
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = −0.42 A (Note 2)
I
−
−
−
−0.42
−1.2
A
V
S
V
SD
V
GS
−0.7
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θ
θ
CA
JC
b) 270°C/W when mounted on
a minimum pad.
a) 250°C/W when mounted on
2
a 0.02 in pad of 2 oz Cu.
Scale 1:1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
www.onsemi.com
3
FDN342P
TYPICAL CHARACTERISTICS
2
20
15
10
5
V
GS
= −4.5 V
− 3 V
V
GS
= −2.5 V
− 4.0 V
− 3.5 V
− 3.0 V
1.8
1.6
− 3.5 V
1.4
−2.5 V
−4 V
1.2
−4.5 V
− 2.0 V
1
0
0.8
16
8
4
12
20
0
3
4
1
2
0
5
−I DRAIN CURRENT (A)
D,
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.6
0.3
0.2
I
= −2.0 A
= −4.5 V
I
D
= −1 A
D
V
GS
1.4
1.2
T = 125°C
1
0.8
0.6
A
0.1
0
T = 25°C
A
4
3
1
2
5
−50
−25
0
25
50
75
100
125 150
−V , GATE TO SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
8
6
100
10
1
V
GS
= 0 V
T = −55°C
A
V
DS
= −5 V
25°C
125°C
4
2
0
0.1
0.01
T = 125°C
A
0.001
25°C
0.4
−55°C
0.0001
3.4
0.4
1.4
2.4
0
0.8
0.2
0.6
1
1.4
1.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature
www.onsemi.com
4
FDN342P
TYPICAL CHARACTERISTICS (Continued)
1000
5
4
V
= −5 V
I
D
= −2 A
f = 1 MHz
= 0 V
DS
V
GS
−10 V
−15 V
800
600
400
C
ISS
3
2
1
0
C
OSS
200
0
C
RSS
2
0
4
6
8
15
−V , DRAIN TO SOURCE VOLTAGE (V)
20
0
10
5
Q ,GATE CHARGE (nC)
G
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
20
16
12
Single Pulse
R
= 270°C/W
θ
JA
R
LIMIT
DS(ON)
T = 25°C
A
10
1
1 ms
10 ms
8
4
0
100 ms
V
= −4.5 V
GS
0.1
Single Pulse
1 s
10 s
DC
R
= 270°C/W
θ
JA
T = 25°C
A
0.01
1000
0.1
1
10
100
0.01
10
100
0.0001 0.001
0.1
1
−V , DRAIN−SOURCE VOLTAGE (V)
DS
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
1
D = 0.5
0.5
0.2
0.1
0.2
0.1
R
(t) = r(t) * R
q
JA
q
JA
R
= 270°C/W
q
JA
0.05
0.02
0.01
0.05
P
(pk)
t
1
0.02
0.01
Single Pulse
t
2
0.005
T − T = P * R (t)
q
JA
J
A
Duty Cycle, D = t / t
0.002
0.001
1
2
0.0001
0.001
0.01
0.1
t , TIME (SEC)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
www.onsemi.com
5
FDN342P
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Reel Size
Tape Width
Shipping
342
FDN342P
7″
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDN342PD87Z
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN352AP_NL
Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3, 3 PIN
FAIRCHILD
FDN357ND87Z
Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN357NL99Z
Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN357NS62Z
Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明