FDN361BN [ONSEMI]
N 沟道，逻辑电平，PowerTrench® MOSFET，30V，1.4A，110mΩ;
| 型号： | FDN361BN |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，逻辑电平，PowerTrench® MOSFET，30V，1.4A，110mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
February 2009
FDN361BN
30V N-Channel, Logic Level, PowerTrench/ MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
ꢀ 1.4 A, 30 V.
RDS(ON) = 110 mꢁ @ VGS = 10 V
RDS(ON) = 160 mꢁ @ VGS = 4.5 V
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
ꢀ Low gate charge
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
ꢀ Industry standard outline SOT-23 surface mount
package using proprietary SuperSOTTM-3 design for
superior thermal and electrical capabilities
ꢀ High performance trench technology for extremely
low RDS(ON)
D
D
S
S
G
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
ꢂ 20
V
V
A
VGSS
Gate-Source Voltage
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
1.4
10
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.5
PD
W
0.46
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
ꢃC
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
RꢄJA
RꢄJC
ꢃC/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
361B
FDN361BN
7’’
8mm
3000 units
www.fairchildsemi.com
02009 Fairchild Semiconductor Corporation
FDN361BN Rev A1(W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 ꢅA
ꢆBVDSS
ꢇꢇꢇꢆTJ
Breakdown Voltage Temperature
Coefficient
26
ID = 250 ꢅA,Referenced to 25ꢃC
mV/ꢃC
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
ꢅA
ꢅA
nA
10
VDS = 24 V, VGS = 0 V, TJ = 55ꢃC
IGSS
Gate–Body Leakage
VGS = ꢂ20 V,
VDS = 0 V
ꢂ100
On Characteristics
(Note 2)
VGS(th)
RDS(on)
Gate Threshold Voltage
1
2.1
92
120
114
3
V
VDS = VGS
VGS = 10 V,
GS = 4.5 V,
,
ID = 250 ꢅA
ID = 1.4 A
ID = 1.2 A
Static Drain–Source
On–Resistance
110
160
150
mꢁ
V
VGS = 10 V, ID = 1.4 A, TJ = 125ꢃC
ID(on)
gFS
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
3.5
A
S
Forward Transconductance
VDS = 5 V,
ID = 1.4 A
4
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
145
35
193
47
pF
pF
pF
ꢁ
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
15
23
V
GS = 15 mV,
f = 1.0 MHz
1.6
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
3
8
6
16
29
4
ns
ns
V
V
DD = 15 V,
GS = 10 V,
ID = 1 A,
RGEN = 6 ꢁ
16
2
ns
ns
Qg
Qgs
Qgd
1.3
0.5
0.5
1.8
nC
nC
nC
VDS = 15 V,
VGS = 4.5 V
ID = 1.4 A,
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 0.42 A (Note 2)
IF = 1.4 A, diF/dt = 100 A/µs
0.8
1.2
22
V
trr
11
4
nS
nC
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
Notes:
1.
RꢄJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RꢄJC is guaranteed by design while RꢄCA is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
a) 250ꢃC/W when mounted on a
2
0.02 in pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ꢈꢇ300 ꢅs, Duty Cycle ꢈꢇ2.0%
FDN361BN Rev A1(W)
www.fairchildsemi.com
Typical Characteristics
5
2.8
2.6
2.4
2.2
2
VGS = 10V
4.5V
6.0V
4
3
2
1
0
VGS = 3.5V
3.5V
1.8
1.6
1.4
1.2
1
4.0V
4.5V
5.0V
3
6.0V
10V
3.0V
0.8
0
1
2
4
5
0
0.5
1
1.5
2
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.25
ID = 1.4A
ID = 0.7A
VGS = 10V
0.225
0.2
0.175
TA = 125oC
0.15
0.125
0.8
0.6
0.1
TA = 25oC
0.075
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
5
VDS = 5V
VGS = 0V
1
4
3
TA = 125oC
0.1
25oC
0.01
2
TA = 125oC
-55oC
25oC
1
0.001
-55oC
0
0.0001
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
V
SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN361BN Rev A1(W)
www.fairchildsemi.com
Typical Characteristics
10
200
180
160
140
120
100
80
f = 1 MHz
GS = 0 V
ID =1.4A
VDS = 10V
15V
V
CISS
8
6
4
2
0
20V
60
COSS
CRSS
40
20
0
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
5
4
3
2
1
0
SINGLE PULSE
R
ꢄJA = 270°C/W
A = 25°C
T
100ꢅs
RDS(ON) LIMIT
1ms
10ms
100ms
1
1s
VGS = 10V
DC
SINGLE PULSE
0.1
0.01
R
ꢄJA = 270oC/W
T
A = 25oC
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
ꢄJA(t) = r(t) * RꢄJA
R
ꢄJA = 270oC/W
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
0.01
0.01
TJ - TA = P * RꢄJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN361BN Rev A1(W)
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
Build it Now™
CorePLUS™
FRFET
Programmable Active Droop™
SM
®
Global Power Resource
Green FPS™
QFET
TinyBoost™
TinyBuck™
CorePOWER™
CROSSVOLT™
CTL™
QS™
Quiet Series™
RapidConfigure™
Green FPS™ e-Series™
GTO™
®
TinyLogic
Current Transfer Logic™
IntelliMAX™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
EcoSPARK
ISOPLANAR™
MegaBuck™
™
EfficentMax™
EZSWITCH™ *
Saving our world, 1mW /W /kW at a time™
MICROCOUPLER™
MicroFET™
SmartMax™
™
SMART START™
TriFault Detect™
ꢅSerDes™
®
MicroPak™
SPM
MillerDrive™
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
®
MotionMax™
Motion-SPM™
®
Fairchild
®
®
®
Fairchild Semiconductor
FACT Quiet Series™
UHC
OPTOLOGIC
®
Ultra FRFET™
UniFET™
VCX™
OPTOPLANAR
®
®
®
FACT
FAST
tm
FastvCore™
®
VisualMax™
XS™
PDP SPM™
FlashWriter
FPS™
*
Power-SPM™
®
®
The Power Franchise
PowerTrench
F-PFS™
PowerXS™
®
* EZSWITCH™ and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used herein:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
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Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I38
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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