FDP038AN06A0 [ONSEMI]
N 沟道，Power Trench® MOSFET，60V，80A，3.8mΩ;
| 型号： | FDP038AN06A0 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，60V，80A，3.8mΩ 局域网 开关 晶体管 |
| 文件： | 总13页 (文件大小：655K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDP038AN06A0 / FDI038AN06A0
®
N-Channel PowerTrench MOSFET
60 V, 80 A, 3.8 mΩ
Features
Applications
RDS(on) = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
•
•
•
•
•
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
QG(tot) = 96 nC ( Typ.) @ VGS = 10 V
• Low Miller Charge
Low Qrr Body Diode
Motor drives and Uninterruptible Power Supplies
•
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82584
D
G
I2-PAK
G
D
D
S
S
G
TO-220
S
MOSFET Maximum Ratings T = 25°C unless otherwise noted
C
FDP038AN06A0
FDI038AN06A0
Symbol
Parameter
Unit
V
V
Drain to Source Voltage
Gate to Source Voltage
60
V
V
DSS
±20
GS
Drain Current
o
80
17
A
A
Continuous (T < 151 C, V = 10V)
C
GS
I
D
o
o
Continuous (T
= 25 C, V = 10V, with R
= 62 C/W)
θJA
amb
GS
Pulsed
Figure 4
625
A
E
P
Single Pulse Avalanche Energy (Note 1)
Power dissipation
mJ
W
AS
310
D
o
o
Derate above 25 C
2.07
W/ C
o
T , T
Operating and Storage Temperature
-55 to 175
C
J
STG
Thermal Characteristics
oC/W
oC/W
0.48
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max. (Note 2)
62
©2002 Semiconductor Components Industries, LLC.
September-2017,Rev. 3
Publication Order Number:
FDP038AN06A0/D
Package Marking and Ordering Information
Device Marking
FDP038AN06A0
FDI038AN06A0
Device
Package
TO-220
I2-PAK
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
50 units
FDP038AN06A0
FDI038AN06A0
Tube
N/A
Electrical Characteristics T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
B
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
= 250µA, V = 0V
60
-
-
-
-
-
-
V
VDSS
D
GS
V
V
V
= 50V
= 0V
1
DS
GS
GS
I
I
µA
nA
DSS
o
T
= 150 C
-
250
±100
C
= ±20V
-
GSS
On Characteristics
V
Gate to Source Threshold Voltage
V
= V , I = 250µA
2
-
-
4
V
GS(TH)
GS
DS
D
I
I
I
= 80A, V = 10V
0.0035 0.0038
0.0049 0.0074
D
D
D
GS
= 40A, V = 6V
-
GS
r
Drain to Source On Resistance
Ω
DS(ON)
= 80A, V = 10V,
GS
-
0.0071 0.0078
o
T = 175 C
J
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
6400
1123
367
96
-
pF
pF
pF
nC
nC
nC
nC
nC
ISS
V
= 25V, V = 0V,
GS
DS
Output Capacitance
-
OSS
RSS
f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
-
124
15
-
Q
Q
Q
Q
Q
V
V
= 0V to 10V
= 0V to 2V
g(TOT)
g(TH)
gs
GS
-
-
-
-
12
GS
V
= 30V
DD
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
I
= 80A
26
D
I = 1.0mA
g
15
-
gs2
27
-
gd
Switching Characteristics (V = 10V)
GS
t
t
t
t
t
t
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
17
144
34
60
-
175
ns
ns
ns
ns
ns
ns
ON
-
d(ON)
-
V
V
= 30V, I = 80A
r
DD
GS
D
= 10V, R = 2.4Ω
Turn-Off Delay Time
Fall Time
-
-
GS
d(OFF)
f
Turn-Off Time
115
OFF
Drain-Source Diode Characteristics
I
I
I
I
= 80A
= 40A
-
-
-
-
-
-
-
-
1.25
1.0
38
V
V
SD
SD
SD
SD
V
Source to Drain Diode Voltage
SD
t
Reverse Recovery Time
= 75A, dI /dt = 100A/µs
ns
nC
rr
SD
Q
Reverse Recovered Charge
= 75A, dI /dt = 100A/µs
39
RR
SD
Notes:
1: Starting T = 25°C, L = 0.255mH, I = 70A.
J
AS
2: Pulse Width = 100s
www.onsemi.com
2
Typical Characteristics T = 25°C unless otherwise noted
C
1.2
250
CURRENT LIMITED
BY PACKAGE
1.0
200
0.8
150
0.6
100
0.4
50
0.2
0
0
25
50
75
100
125
150
175
0
25
50
75
100
150
175
125
o
o
T
, CASE TEMPERATURE ( C)
C
T , CASE TEMPERATURE ( C)
C
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
0.01
PEAK T = P
x Z
x R
+ T
θJC C
J
DM
θJC
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
10
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
3000
1000
o
T
= 25 C
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
V
= 10V
GS
100
10
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
10
10
10
Figure 4. Peak Current Capability
www.onsemi.com
3
Typical Characteristics T = 25°C unless otherwise noted
C
2000
1000
100
10
1
10µs
100µs
1ms
o
STARTING T = 25 C
J
100
10
o
STARTING T = 150 C
J
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
1
If R = 0
DC
t
= (L)(I )/(1.3*RATED BV
AV
- V
)
SINGLE PULSE
AS
DSS
DD
If R ≠ 0
AV
T
T
= MAX RATED
= 25 C
J
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DD
o
AS
DSS
C
0.1
0.01
0.1
1
10
100
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
t
, TIME IN AVALANCHE (ms)
AV
V
DS
NOTE: Refer to ON Semiconductor Application Notes AN7514 and
AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
160
160
PULSE DURATION = 80µs
V
= 20V
GS
V
= 10V
GS
DUTY CYCLE = 0.5% MAX
V
= 15V
DD
120
80
40
0
120
80
40
0
V
= 6V
GS
V
= 5V
GS
o
T
= 175 C
J
o
T
= 25 C
J
o
T
= -55 C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T
= 25 C
C
3.0
3.5
4.0
4.5
5.0
5.5
6
0
0.5
1.0
1.5
V
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
GS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
2.5
2.0
1.5
1.0
0.5
6
5
4
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 6V
GS
V
= 10V
GS
V
= 10V, I =80A
D
GS
0
20
40
I , DRAIN CURRENT (A)
60
80
-80
-40
0
40
80
120
160
200
o
T , JUNCTION TEMPERATURE ( C)
J
D
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
www.onsemi.com
4
Typical Characteristics T = 25°C unless otherwise noted
C
1.4
1.2
V
= V , I = 250µA
DS D
I = 250µA
D
GS
1.2
1.0
0.8
0.6
0.4
0.2
1.1
1.0
0.9
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
V
= 30V
DD
C
= C + C
GD
8
6
4
2
0
ISS
GS
C
C
+ C
GD
OSS
DS
GD
1000
C
= C
RSS
WAVEFORMS IN
DESCENDING ORDER:
I
I
= 80A
= 40A
D
D
V
= 0V, f = 1MHz
1
GS
100
0.1
10
60
0
25
50
Q , GATE CHARGE (nC)
75
100
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
g
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
www.onsemi.com
5
Test Circuits and Waveforms
V
DS
BV
DSS
t
P
L
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
V
DS
V
Q
DD
g(TOT)
V
L
DS
V
GS
V
= 10V
GS
V
GS
+
-
Q
gs2
V
DD
DUT
V
= 2V
GS
I
g(REF)
0
Q
g(TH)
Q
Q
gs
gd
I
g(REF)
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
V
DS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
R
L
t
t
f
r
V
DS
90%
90%
+
-
V
GS
V
DD
10%
10%
0
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
V
10%
GS
0
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
www.onsemi.com
6
PSPICE Electrical Model
.SUBCKT FDP038AN06A0 2 1 3 ; rev July 04, 2002
Ca 12 8 1.5e-9
Cb 15 14 1.5e-9
Cin 6 8 6.1e-9
LDRAIN
DPLCAP
5
DRAIN
2
10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
RLDRAIN
RSLC1
51
DBREAK
+
RSLC2
5
ESLC
11
51
Ebreak 11 7 17 18 69.3
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
-
+
50
-
17
DBODY
RDRAIN
6
8
EBREAK 18
-
ESG
EVTHRES
+
16
21
+
-
19
8
MWEAK
Evtemp 20 6 18 22 1
LGATE
EVTEMP
RGATE
GATE
1
6
+
-
18
22
MMED
It 8 17 1
9
20
MSTRO
8
RLGATE
Lgate 1 9 4.81e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 4.63e-9
LSOURCE
CIN
SOURCE
3
7
RSOURCE
RLSOURCE
RLgate 1 9 48.1
RLdrain 2 5 10
RLsource 3 7 46.3
S1A
S2A
RBREAK
12
15
13
8
14
13
17
18
RVTEMP
19
S1B
S2B
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
13
CB
CA
IT
14
-
+
+
VBAT
6
8
5
8
EGS
EDS
+
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 1e-4
Rgate 9 20 1.36
-
-
8
22
RVTHRES
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 2.8e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),10))}
.MODEL DbodyMOD D (IS=2.4E-11 N=1.04 RS=1.65e-3 TRS1=2.7e-3 TRS2=2e-7
+ CJO=4.35e-9 M=5.4e-1 TT=1e-9 XTI=3.9)
.MODEL DbreakMOD D (RS=1.5e-1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=1.7e-9 IS=1e-30 N=10 M=0.47)
.MODEL MmedMOD NMOS (VTO=3.3 KP=9 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.36 T_abs=25)
.MODEL MstroMOD NMOS (VTO=4.00 KP=275 IS=1e-30 N=10 TOX=1 L=1u W=1u T_abs=25)
.MODEL MweakMOD NMOS (VTO=2.72 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=13.6 RS=0.1 T_abs=25)
.MODEL RbreakMOD RES (TC1=9e-4 TC2=-9e-7)
.MODEL RdrainMOD RES (TC1=4e-2 TC2=3e-4)
.MODEL RSLCMOD RES (TC1=1e-3 TC2=1e-5)
.MODEL RsourceMOD RES (TC1=5e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-6.7e-3 TC2=-1.5e-5)
.MODEL RvtempMOD RES (TC1=-2.5e-3 TC2=1e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-1.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-1)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
www.onsemi.com
7
SABER Electrical Model
rev July 4, 2002
template FDP038AN06A0 n2,n1,n3 = m_temp
electrical n2,n1,n3
number m_temp=25
{
var i iscl
dp..model dbodymod = (isl=2.4e-11,nl=1.04,rs=1.65e-3,trs1=2.7e-3,trs2=2e-7,cjo=4.35e-9,m=5.4e-1,tt=1e-9,xti=3.9)
dp..model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.7e-9,isl=10e-30,nl=10,m=0.47)
m..model mmedmod = (type=_n,vto=3.3,kp=9,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.00,kp=275,is=1e-30, tox=1)
LDRAIN
m..model mweakmod = (type=_n,vto=2.72,kp=0.03,is=1e-30, tox=1,rs=0.1)
DPLCAP
DRAIN
2
5
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-1.5)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-1.5,voff=-4)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1,voff=0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.5,voff=-1)
c.ca n12 n8 = 1.5e-9
10
RLDRAIN
RSLC1
51
RSLC2
ISCL
c.cb n15 n14 = 1.5e-9
c.cin n6 n8 = 6.1e-9
DBREAK
11
50
-
RDRAIN
6
8
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
ESG
DBODY
EVTHRES
+
16
21
+
-
19
8
MWEAK
LGATE
EVTEMP
RGATE
GATE
1
+
6
-
18
22
EBREAK
+
spe.ebreak n11 n7 n17 n18 = 69.3
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
MMED
9
20
MSTRO
8
17
18
-
RLGATE
LSOURCE
CIN
SOURCE
3
7
RSOURCE
RLSOURCE
S1A
S2A
i.it n8 n17 = 1
RBREAK
12
15
13
8
14
13
17
18
l.lgate n1 n9 = 4.81e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 4.63e-9
RVTEMP
19
S1B
S2B
13
CB
CA
IT
14
-
+
+
VBAT
6
8
5
8
res.rlgate n1 n9 = 48.1
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 46.3
EGS
EDS
+
-
-
8
22
RVTHRES
m.mmed n16 n6 n8 n8 = model=mmedmod, temp=m_temp, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, temp=m_temp, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, temp=m_temp, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=9e-4,tc2=-9e-7
res.rdrain n50 n16 = 1e-4, tc1=4e-2,tc2=3e-4
res.rgate n9 n20 = 1.36
res.rslc1 n5 n51 = 1e-6, tc1=1e-3,tc2=1e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 2.8e-3, tc1=5e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-6.7e-3,tc2=-1.5e-5
res.rvtemp n18 n19 = 1, tc1=-2.5e-3,tc2=1e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/250))** 10))
}
www.onsemi.com
8
SPICE Thermal Model
REV 23 July 4, 2002
JUNCTION
th
FDP038AN06A0T
CTHERM1 TH 6 6.45e-3
CTHERM2 6 5 3e-2
CTHERM3 5 4 1.4e-2
CTHERM4 4 3 1.65e-2
CTHERM5 3 2 4.85e-2
CTHERM6 2 TL 1e-1
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
RTHERM1 TH 6 3.24e-3
RTHERM2 6 5 8.08e-3
RTHERM3 5 4 2.28e-2
RTHERM4 4 3 1e-1
RTHERM5 3 2 1.1e-1
RTHERM6 2 TL 1.4e-1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model FDP035AN06A0T
template thermal_model th tl
thermal_c th, tl
{
4
3
2
ctherm.ctherm1 th 6 =6.45e-3
ctherm.ctherm2 6 5 =3e-2
ctherm.ctherm3 5 4 =1.4e-2
ctherm.ctherm4 4 3 =1.65e-2
ctherm.ctherm5 3 2 =4.85e-2
ctherm.ctherm6 2 tl =1e-1
rtherm.rtherm1 th 6 =3.24e-3
rtherm.rtherm2 6 5 =8.08e-3
rtherm.rtherm3 5 4 =2.28e-2
rtherm.rtherm4 4 3 =1e-1
rtherm.rtherm5 3 2 =1.1e-1
rtherm.rtherm6 2 tl=1.4e-1
}
tl
CASE
www.onsemi.com
9
Mechanical Dimensions
TO-220 3L
Figure 21. TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
www.onsemi.com
10
Mechanical Dimensions
TO-262 3L (I2PAK)
Figure 22. 3LD, TO262, Jedec Variation AA (I2PAK)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
www.onsemi.com
11
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FDP045N10A_F102
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明