FDP053N08B-F102 [ONSEMI]
N 沟道,PowerTrench® MOSFET,80V,120A,5.3mΩ;型号: | FDP053N08B-F102 |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,80V,120A,5.3mΩ |
文件: | 总12页 (文件大小:1086K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2014 年2 月
FDP053N08B
®
N 沟道PowerTrench MOSFET
80 V、120 A、5.3 m
特性
•
说明
此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺
生产,这一先进工艺是专为最大限度地降低导通电阻并保持卓越
开关性能而定制的。
RDS(on) = 4.2 m (Typ.)@VGS = 10 V, ID = 75 A
• 低FOM RDS(on) * QG
• 低反向恢复电荷,Qrr =62.5 nC
• 软反向恢复体二极管
• 可实现高效同步整流
• 快速开关速度
应用
• 用于ATX/ 服务器/ 电信PSU 的同步整流
• 电池保护电路
• 电机驱动和不间断电源
•
100% 经过UIL 测试
• 符合RoHS 标准
D
G
G
D
S
TO-220
S
最大额定值TC =25°C 除非另有说明。
FDP053N08B_F102
符号
参数
单位
VDSS
VGSS
80
±20
V
漏极-源极电压
栅极-源极电压
V
A
120*
85.2*
75
- 连续(TC=25°C,硅限制)
- 连续(TC=100°C,硅限制)
- 连续(TC=25°C,封装限制)
- 脉冲
ID
漏极电流
IDM
480
A
mJ
漏极电流
(说明1)
(说明2)
(说明3)
EAS
dv/dt
365
单脉冲雪崩能量
二极管恢复dv/dt 峰值
6.0
V/ns
W
(TC = 25°C)
146
PD
功耗
0.97
-55 至+175
300
W/°C
°C
- 降低至25°C 以上
TJ, TSTG
TL
工作和存储温度范围
°C
用于焊接的最大引线温度,距离外壳1/8",持续5 秒
* 封装限制电流为75 A。
热性能
FDP053N08B_F102
符号
参数
单位
RJC
RJA
1.03
62.5
结至外壳热阻最大值
结至环境热阻最大值
°C/W
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1
© 2012 飞兆半导体公司
FDP053N08B Rev. C2
封装标识与定购信息
器件编号
顶标
FDP053N08B
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FDP053N08B_F102
TO-220
不适用
50 个
电气特性TC =25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 A, VGS = 0 V
80
-
-
-
-
V
漏极-源极击穿电压
BVDSS
/ TJ
击穿电压温度系数
ID=250 A,温度参考25°C
0.089
V/oC
V
DS = 64 V, VGS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
A
零栅极电压漏极电流
VDS = 64 V, TC = 125°C
VGS = ±20 V, VDS = 0 V
500
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 75 A
2.5
-
4.5
5.3
-
V
m
S
栅极阈值电压
-
-
4.2
100
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
-
-
4480
740
5960
pF
pF
pF
pF
nC
nC
nC
V
输入电容
VDS = 40 V, VGS = 0 V,
f = 1 MHz
Coss
985
输出电容
Crss
20.5
1333
65.4
26.7
15.3
6.0
-
-
反向传输电容
Coss(er)
Qg(tot)
Qgs
VDS = 40 V, VGS = 0 V
能量相关输出电容
10 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
栅极平台电压
85
-
VDS = 40 V, ID = 75 A,
V
GS = 10 V
Qgd
-
Vplateau
Qsync
Qoss
ESR
-
(说明4)
VDS = 0 V, ID = 37.5 A
VDS = 40 V, VGS = 0 V
f = 1 MHz
52.4
64.2
1.2
-
nC
nC
总栅极电荷同步
输出电荷
-
-
等效串联电阻(G-S)
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
32
30
44
16
74
70
98
42
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 40 V, ID = 75 A,
V
GS = 10 V, RG = 4.7
(说明4)
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
120*
480
1.3
-
A
A
漏极- 源极二极管最大正向连续电流
ISM
VSD
trr
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
VGS = 0 V, ISD = 75 A
-
V
59.3
62.5
ns
nC
VGS = 0 V, VDD = 40 V, ISD = 75 A,
dIF/dt = 100 A/s
Qrr
-
反向恢复电荷
注意:
1. 重复额定值:脉冲宽度受限于最大结温。
2. L=3 mH,I =15.6 A,开始T =25°C。
AS
J
3. I 100 A,di/dt 200 A/s,V BV
,开始T =25°C。
J
SD
DD
DSS
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
2
© 2012 飞兆半导体公司
FDP053N08B Rev. C2
典型性能特征
图1. 导通区域特性
图2. 传输特性
400
100
400
*Notes:
1. VDS = 10V
2. 250s Pulse Test
100
10
1
25oC
VGS = 15.0V
10
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
175oC
-55oC
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
0.1
1
10
2
3
4
5
6
7
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压的关系 图4. 体二极管正向电压变化与源极电流和温度的关系
6.0
5.5
5.0
4.5
4.0
3.5
3.0
400
100
175oC
25oC
VGS = 10V
10
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
270 360 450
2. 250s Pulse Test
1
0.3
0
90
180
0.6
0.9
1.2
1.5
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
图5. 电容特性
图6. 栅极电荷特性
10000
10
VDS = 16V
Ciss
8
6
4
2
0
V
V
DS = 40V
DS = 64V
1000
Coss
*Note:
1. VGS = 0V
100
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds
= C
gd
oss
rss
gd
Crss
*Note: ID = 75A
60
10
0.1
1
10
100
0
20
40
80
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
© 2012 飞兆半导体公司
FDP053N08B Rev. C2
典型性能特性(接上页)
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
2.0
1.10
1.8
1.6
1.4
1.2
1.0
1.05
1.00
0.95
*Notes:
*Notes:
1. VGS = 10V
0.8
0.6
1. VGS = 0V
2. ID = 75A
2. ID = 250A
0.90
-80
-80
-40
0
40
80
120 160 200
-40
0
40
80
120 160 200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与壳温的关系
140
1000
120
100
100
100s
VGS = 10V
10
1ms
10ms
100ms
DC
80
Operation in This Area
is Limited by R DS(on)
1
60
40
20
SINGLE PULSE
T
C = 25oC
TJ = 175oC
JC = 1.03oC/W
0.1
R
JC = 1.03oC/W
R
0
25
0.01
50
75
100
125
150
175
1
10
VDS, Drain-Source Voltage [V]
100
TC, Case Temperature [oC]
图11. 输出电容(Eoss) 与漏源极电压的关系
图12. 非箝位电感开关能力
100
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 25 oC
10
TJ = 150 o
C
1
0.001
0.01
0.1
1
10
100 400
0
15
30
45
60
75
90
VDS, Drain to Source Voltage [V]
tAV, TIME IN AVALANCHE (ms)
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4
© 2012 飞兆半导体公司
FDP053N08B Rev. C2
典型性能特性(接上页)
图13. 瞬态热响应曲线
1.5
1
0.5
0.2
PDM
0.1
0.1
t1
0.05
t2
*Notes:
0.02
0.01
1. ZJC(t) = 1.03oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.001
10-5
10-4
10-3
10-2
10-1
1
t
1,矩形脉冲持续时间[ 秒]
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5
© 2012 飞兆半导体公司
FDP053N08B Rev. C2
I = 常量
G
图14. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图15. 阻性开关测试电路与波形
VGS
图16. 非箝位电感开关测试电路与波形
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6
© 2012 飞兆半导体公司
FDP053N08B Rev. C2
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图17. 二极管恢复dv/dt 峰值测试电路与波形
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7
© 2012 飞兆半导体公司
FDP053N08B Rev. C2
VCC
Driver
VGS
(Driver)
t
t
VGS
(D UT)
10V
VDD
VR
G
DUT
RG
1
Qsync
t dt
V
RG
VGS
RG
图18. 总栅极电荷Qsync 测试电路与波形
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8
© 2012 飞兆半导体公司
FDP053N08B Rev. C2
机械尺寸
图19. TO-220 模塑3 引线Jedec 变体AB (Delta)
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和 /
或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3
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© 2012 飞兆半导体公司
FDP053N08B Rev. C2
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