FDP10N60NZ [ONSEMI]
Power MOSFET，N 沟道，UniFETTMII，600V，10A，750mΩ，TO-220;
| 型号： | FDP10N60NZ |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET，N 沟道，UniFETTMII，600V，10A，750mΩ，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：2319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDP10N60NZ / FDPF10N60NZ
N沟道UniFETTM II MOSFET
600 V, 10 A, 750 mΩ
特性
说明
• RDS(on) = 640 mΩ（典型值） @ VGS = 10 V, ID = 5 A
• 低栅极电荷（典型值 23 nC)
TM
®
UniFET II MOSFET是飞兆半导体的高压MOSFET系列产品，基于平
面条形技术和DMOS技术。该先进MOSFET系列产品在平面 MOSFET 产
品中具有最小的通态电阻，还可提供卓越的开关性能和更高的雪崩
• 低Crss（典型值 10 pF)
• 100%经过雪崩测试
• 改善的dv/dt处理能力
• 增强的 ESD 能力
TM
沟
道
能量强度。此外，内部的栅源 ESD 二极管使 UniFET II MOSFET
产品可承受超过 2kV 的 HBM静电冲击应力。该器件系列适用于开
关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视
电源、ATX 及灯用电子镇流器。
• 符合 RoHS 标准
™
应用
• LCD/ LED/ PDP TV
• 照明
• 不间断电源
o
MOSFET最大额定值Tc = 25C，除非另有说明*
符号
参数
FDP10N60NZ
FDPF10N60NZ
600
单位
漏极－源极电压
栅极－源极电压
VDSS
VGSS
V
V
±25
- 连续 (TC = 25oC)
- 连续(TC = 100oC)
- 脉冲
10
6
10*
6*
lD
漏极电流
A
漏极电流
（注 1）
(注 2)
40
40*
lDM
EAS
lAR
EAR
A
mJ
单脉冲雪崩能量
雪崩电流
550
10
（注 1）
（注 1）
（注 3）
A
重复雪崩能量
二极管恢复dv/dt峰值
18.5
10
mJ
dv/dt
V/ns
(TC = 25oC)
185
1.5
38
0.3
W
W/oC
功耗
PD
- 降低至 25oC 以上
工作和存储温度范围
-55 to +150
300
o
TJ TSTG
C
用于焊接的最大引脚温度，距离外壳1/8"，持续5秒
o
C
TL
*漏极电流受限于最大结温
热性能
符号
参数
FDP10N60NZ
0.68
FDPF10N60NZ
单位
RθJC
RθCS
RθJA
结至外壳热阻最大值
3.3
-
外壳与散热体之间的热阻典型值
结至环境热阻最大值
0.5
oC/W
62.5
62.5
©2010 飞兆半导体公司
1
www.fairchildsemi.com
FDP10N60NZ / FDPF10N60NZRev. C0
封装标识与定购信息
器件标识
FDP10N60NZ
FDPF10N60NZ
设备
封装
规格
带宽
数量
50
FDP10N60NZ
FDPF10N60NZ
TO-220
TO-220F
-
-
-
-
50
o
电气特性 TC = 25C，除非另有说明
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
o
ID = 250μA, VGS = 0V, TJ = 25C
漏极－源极击穿电压
击穿电压温度系数
600
-
-
-
-
V
△BVDSS
△TJ
o
ID = 250μA，推荐选用25C
o
V/C
0.6
VDS = 600V, VGS = 0V
-
-
-
-
-
-
1
IDSS
IGSS
零栅极电压漏极电流
μA
μA
o
VDS = 480V, TC = 125C
10
栅极-体漏电流
VGS = ±25V, VDS = 0V
±10
导通特性
VGS(th)
栅极阈值电压
VGS = VDS, ID = 250μA
VGS = 10V, ID = 5A
VDS = 20 V, ID = 5A
3.0
-
-
5.0
0.75
-
V
Ω
RDS(on)
漏极至源极静态导通电阻
正向跨导
0.64
14
gFS
-
S
动态特性
Ciss
Coss
Crss
Qg
直流母线电容值
输出电容
VDS = 25V, VGS = 0V
f = 1MHz
-
-
-
-
-
-
1110
130
10
23
6
1475
175
15
30
-
pF
pF
pF
nC
nC
nC
反向传输电容
VDS = 480V, ID = 10A
VGS = 10V
10V的栅极电荷总量
栅极 - 源极栅极电荷
栅极-漏极“密勒”电荷
Qgs
（说明4）
Qgd
8
-
开关特性
VDD = 300V, ID = 10A
RG = 25Ω
td(on)
tr
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
-
-
-
-
25
50
70
50
60
ns
ns
ns
ns
110
150
110
（说明4）
td(off)
tf
漏极 - 源极二极管特性
IS
漏极 - 源极二极管最大正向连续电流
漏极 - 源极二极管最大正向脉冲电流
-
-
-
-
-
-
-
10
40
1.4
-
A
A
ISM
VSD
trr
漏极 - 源极二极管正向电压
反向恢复时间
VGS = 0V, ISD = 10A
-
V
VGS = 0V, ISD = 10A
300
2
ns
μC
dIF/dt = 100A/μs
Qrr
反向恢复电荷
-
注意：
1.重复率额定值：脉冲宽度受限于最大结温
2.L = 11mH，IAS = 10A，VDD = 50V，RG = 25Ω，开始TJ = 25°C
3.ISD ≤10A，di/dt <200A/μs，VDD ≤BVDSS，开始TJ = 25°C
4.本质上独立于操作温度的典型特性
典型性能特征
图1. 通态区域特性
图2. 传递特性
图3. 通态变化与
漏极电流和栅极电压
图4. 体二极管正向电压
变化与 源极电流
和温度
图5. 电容特性
图6. 栅极电荷特性
典型性能特征（接上页）
图7. 击穿电压变化
图8. 通态变化
vs 温度
vs 温度
图9. 最大安全操作区
-FDP10N60NZ
图10. 最大安全工作区
-FDPF10N60NZ
图11. 最大漏极电流与 壳体温度
典型性能特征 （接上页）
图12. 瞬态热响应曲线 -FDP10N60NZ
图13. 瞬态热响应曲线 -FDPF10N60NZ
栅极电荷测试电路与波形
阻性开关测试电路与波形
非箝位感性开关测试电路与波形
二极管恢复dv/dt峰值测试电路与波形
机械尺寸
TO-220B03
尺寸单位为毫米
封装尺寸
TO-220M03
尺寸单位为毫米
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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