FDP12N60NZ [ONSEMI]
功率 MOSFET,N 沟道,UniFETTM II,600 V,12 A,650 mΩ,TO-220;型号: | FDP12N60NZ |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,UniFETTM II,600 V,12 A,650 mΩ,TO-220 |
文件: | 总12页 (文件大小:754K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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November 2013
FDP12N60NZ / FDPF12N60NZ
TM
N-Channel UniFET II MOSFET
600 V, 12 A, 650 mΩ
Features
Description
•
•
•
•
•
•
•
RDS(on) = 530 mΩ (Typ.) @ VGS = 10 V, ID = 6 A
Low Gate Charge (Typ. 26 nC)
Low Crss (Typ. 12 pF)
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
100% Avalanche Tested
Improved dv/dt Capability
ESD Improved Capability
RoHS Compliant
Applications
•
•
•
LCD/ LED/ PDP TV
Lighting
Uninterruptible Power Supply
D
G
G
D
S
G
D
TO-220F
TO-220
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
FDPF12N60NZ
Symbol
VDSS
VGSS
Parameter
FDP12N60NZ
Unit
V
Drain to Source Voltage
Gate to Source Voltage
600
±30
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
12
7.2
48
12*
7.2*
48*
ID
Drain Current
A
IDM
EAS
IAR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
565
12
EAR
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
24
20
10
mJ
V/ns
V/ns
W
W/oC
oC
dv/dt
PD
(Note 3)
(TC = 25oC)
- Derate Above 25oC
240
2.0
39
Power Dissipation
0.3
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
FDP12N60NZ FDPF12N60NZ
Unit
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.52
62.5
3.2
oC/W
62.5
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
1
Package Marking and Ordering Information
Part Number
FDP12N60NZ
FDPF12N60NZ
Top Mark
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
50 units
FDP12N60NZ
FDPF12N60NZ
TO-220F
Tube
N/A
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V, TJ = 25oC
D = 250 μA, Referenced to 25oC
DS = 600 V, VGS = 0 V
600
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.6
V/oC
V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
μA
VDS = 480 V, TC = 125oC
10
VGS = ±30 V, VDS = 0 V
±10
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 6 A
VDS = 20 V, ID = 6 A
3
-
-
5
0.65
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
0.53
13.5
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
1260
150
12
1676
200
18
34
-
pF
pF
pF
nC
nC
nC
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
26
V
V
DS = 480 V, ID = 12 A,
GS = 10 V
6
(Note 4)
Qgd
10
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
25
50
80
60
60
ns
ns
ns
ns
VDD = 300 V, ID = 12 A,
GS = 10 V, RG = 25 Ω
110
170
130
V
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
12
48
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 12 A
-
V
350
2.2
ns
μC
V
GS = 0 V, ISD = 12 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 7.85 mH, I = 12 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3:
I
≤ 12 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
J
SD
DD
DSS
4: Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
30
VGS = 15.0 V
10.0 V
8.0 V
10
7.0 V
6.0 V
5.5 V
5.0 V
150oC
10
25oC
-55oC
1
1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
* Notes :
1. VDS = 20V
2. 250μs Pulse Test
0.1
0.1
0.1
3
4
5
6
7
8
1
10
20
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
1.0
0.9
150oC
0.8
VGS = 10V
10
25oC
0.7
VGS = 20V
Notes:
0.6
1. VGS = 0V
* Note : TJ = 25oC
20 25 30
2. 250μs Pulse Test
1
0.4
0.5
0.6
0.8
1.0
1.2
1.4
0
5
10
15
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
5000
VDS = 120V
Ciss
VDS = 300V
8
VDS = 480V
1000
6
Coss
4
2
C
C
C
= C + C (C = shorted)
gs gd ds
iss
100
10
= C + C
ds gd
= C
gd
oss
rss
Crss
* Note:
1. VGS = 0V
* Note : ID = 12A
2. f = 1MHz
0
0
6
12
18
24
30
0.1
1
10
30
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs Temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.9
* Notes :
1. VGS = 10V
* Notes :
1. VGS = 0V
0.5
2. ID = 6A
2. ID = 250uA
0.8
-80
0
-80
-40
0
40
80
120
160
-40
0
40
80
120
160
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
- FDPF12N60NZ
Figure 10. Maximum Safe Operating Area
- FDP12N60NZ
100
100
10μs
30μs
100μs
100μs
10
10
1ms
1ms
10ms
10ms
DC
1
1
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
DC
* Notes :
1. TC = 25oC
2. TJ = 150oC
* Notes :
0.1
0.1
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
3. Single Pulse
0.01
0.01
1
10
100
1000
1
10
100
1000
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 11. Maximum Drain Current vs. Case Temperature
15
12
9
6
3
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
- FDPF12N60NZ
5
1
0.5
0.2
0.1
0.05
0.1
0.01
0.02
0.01
P
t
t
* Notes :
Single pulse
1. ZθJC(t) = 3.2oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
10-5
10-4
10-3
10-2
10-1
1
10
102
103
t , Rectangular Pulse Duration [sec]
1
Figure 13. Transient Thermal Response Curve
- FDP12N60NZ
1
0.1
0.5
0.2
0.1
0.05
0.02
P
t
t
0.01
0.01
0.001
* Notes :
Single pulse
1. ZθJC(t) = 0.52oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-5
10-4
10-3
10-2
10-1
1
10
102
103
t , Rectangular Pulse Duration [sec]
1
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
5
I
= const.
G
Figure 14. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
7
Mechanical Dimensions
Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
8
Mechanical Dimensions
Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
9
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Sync-Lock™
®*
®
®
®
tm
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GreenBridge™
Green FPS™
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PowerXS™
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QS™
Quiet Series™
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™
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®
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®
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and Better™
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®
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Saving our world, 1mW/W/kW at a time™
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®
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FACT
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Rev. I66
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©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
10
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ADAM-TECH
FDP14N60
Power Field-Effect Transistor, 14A I(D), 600V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
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