FDP2710-F085 [ONSEMI]
N 沟道，PowerTrench® MOSFET，250V，50A，47mΩ;
| 型号： | FDP2710-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，250V，50A，47mΩ 局域网 开关 晶体管 |
| 文件： | 总8页 (文件大小：515K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDP2710-F085
®
N-Channel PowerTrench MOSFET
250V, 50A, 47mΩ
General Description
This N-Channel MOSFET is produced using ON Semi-
conductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Features
Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A
Typ Qg(TOT) = 78nC at VGS = 10V
Fast switching speed
Applications
PDP application
Low gate charge
Hybrid Electric Vehicle DC/DC converters
High performance trench technology for extremely low
RDS(on)
High power and current handling capability
Qualified to AEC Q101
RoHS Compliant
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
1
Publication Order Number:
FDP2710-F085/D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
250
V
V
VGS
±30
Drain Current Continuous (TC < 50oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
50
ID
4
See Figure 4
483
A
EAS
PD
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/oC
oC
Power Dissipation
Derate above 25oC
403
3.2
TJ, TSTG Operating and Storage Temperature
-55 to +150
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
0.31
62
oC/W
oC/W
(Note 2)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
NA
Quantity
FDP2710
FDP2710-F085
TO220
Tube
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
250
-
-
-
-
V
∆BVDSS Breakdown Voltage Temperature
I
D = 250µA, Referenced to 25°C
0.25
V/°C
/ ∆TJ
IDSS
IGSS
Coefficient
V
DS = 250V,
-
-
-
-
-
-
1
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
VGS = 0V
TC = 125oC
500
±100
VGS = ±30V
nA
On Characteristics
VGS(th)
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
D = 50A, VGS= 10V,
3
-
3.9
38
5
V
mΩ
S
I
47
Drain to Source On Resistance
Forward Transconductance
ID = 50A, VGS= 10V,
TJ = 150oC
-
-
104
63
129
-
ID = 25A, VDS= 10V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
5690
425
115
78
-
pF
pF
pF
nC
nC
nC
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Crss
Output Capacitance
-
Reverse Transfer Capacitance
Total Gate Charge at 20V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
-
Qg(TOT)
Qgs
VGS = 0 to 10V
101
VDD = 125V
ID = 50A
31
-
-
Qgd
20
www.onsemi.com
2
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
-
-
-
-
85
-
-
-
-
ns
ns
ns
ns
VDD = 125V, ID = 50A
VGS = 10V, RGEN = 25Ω
183
140
121
Turn-Off Delay Time
Fall Time
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
-
-
-
-
-
-
-
50
150
1.2
216
1.3
A
A
ISM
VSD
trr
Source to Drain Diode Voltage
Reverse Recovery Time
ISD = 50A
0.9
166
1
V
ns
uC
ISD = 50A, dISD/dt = 100A/µs
Qrr
Reverse Recovery Charge
Notes:
o
1: Starting T = 25 C, L = 1.68mH, I = 24A.
J
AS
2: Pulse width 100s
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
www.onsemi.com
3
Typical Characteristics
60
50
40
30
20
10
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
CURRENT LIMITED
BY PACKAGE
25
50
75
100
125
oC
150
0
25
50
75
100
125
oC
)
150
TC, CASE TEMPERATURE
(
)
TC, CASE TEMPERATURE
(
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
3000
1000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 - TC
I = I2
125
100
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
www.onsemi.com
4
Typical Characteristics
100
10
1
1000
100
10
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
10us
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
100us
STARTING TJ = 25oC
1ms
1
STARTING TJ = 125oC
10ms
DC
SINGLE PULSE
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
T
= MAX RATED
o
J
DS(on)
T
C
= 25 C
0.01
0.01
0.1
1
10
100
500
1
10
100
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
140
140
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
DD = 20V
µs
120
100
80
60
40
20
0
120
100
80
60
40
20
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
VGS = 10V
TJ = 150oC
VGS = 6.5V
TJ = 25oC
TJ = -55oC
VGS = 6V
VGS = 5.5V
2
3
4
5
6
7
8
9
10
0
3
6
9
12
15
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
200
3.0
2.5
2.0
1.5
1.0
0.5
0.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID
=
50A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
150
TJ = 150oC
100
50
0
TJ = 25oC
ID = 50A
VGS = 10V
6
7
8
9
10
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE
(
oC
)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
www.onsemi.com
5
Typical Characteristics
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.15
1.10
1.05
1.00
0.95
0.90
VGS
=
VDS
ID = 1mA
I
D
= 250µA
-80
-40
0
40
80
120
)
160
-80
-40
0
40
80
120
oC
160
oC
TJ, JUNCTION TEMPERATURE
(
)
TJ, JUNCTION TEMPERATURE
(
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
20000
10000
10
VDD = 120V
VDD = 125V
ID = 50A
8
6
4
2
0
Ciss
VDD = 130V
1000
Coss
Crss
100
f = 1MHz
VGS = 0V
10
0
20
40
60
80
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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