FDP3672 [ONSEMI]
N 沟道,PowerTrench® MOSFET,105V,41A,33mΩ;型号: | FDP3672 |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,105V,41A,33mΩ 局域网 开关 晶体管 |
文件: | 总13页 (文件大小:698K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2013
FDP3672
®
N-Channel PowerTrench MOSFET
105 V, 41 A, 33 mΩ
Features
Applications
RDS(on) = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A
QG(tot) = 28 nC ( Typ.) @ VGS = 10 V
Low Miller Charge
•
•
•
•
•
•
•
•
•
Consumer Appliances
Synchronous Rectification
Battery Protection Circuit
Low Qrr Body Diode
Motor drives and Uninterruptible Power Supplies
• Optimized Efficiency at High Frequencies
Micro Solar Inverter
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82760
D
G
D
S
G
TO-220
S
MOSFET Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
VDSS
VGS
Parameter
Unit
V
FDP3672
105
Drain to Source Voltage
Gate to Source Voltage
Drain Current
±20
V
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 62oC/W)
Pulsed
41
31
A
A
ID
5.9
A
Figure 4
48
A
EAS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
mJ
W
W/oC
oC
135
PD
0.9
TJ, TSTG
Operating and Storage Temperature
-55 to 175
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
1.11
oC/W
oC/W
Thermal Resistance, Junction to Ambient, Max. (Note 2)
62
1
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP3672
FDP3672
TO-220
Tube
N/A
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
105
-
-
-
-
-
V
V
DS = 80V
-
-
-
1
IDSS
µA
nA
VGS = 0V
TC= 150oC
250
±100
IGSS
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
D = 41A, VGS = 10V
ID = 21A, VGS = 6V,
2
-
-
4
V
I
0.025 0.033
0.031 0.055
-
rDS(ON)
Drain to Source On Resistance
Ω
I
D = 41A, VGS = 10V,
-
0.063 0.070
TC = 175oC
Dynamic Characteristics
CISS
Input Capacitance
-
-
-
-
-
-
-
-
1670
240
55
-
-
pF
pF
pF
nC
nC
nC
nC
nC
VDS = 25V, VGS = 0V,
f = 1MHz
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
-
VGS = 0V to 10V
28
37
5
-
VGS = 0V to 2V
3.9
12
VDD = 50V
ID = 41A
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Ig = 1.0mA
Qgs2
8.0
6.5
-
Qgd
-
Resistive Switching Characteristics (VGS = 10V)
tON
td(ON)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
90
-
ns
ns
ns
ns
ns
ns
12
48
24
27
-
-
VDD = 50V, ID = 41A
VGS = 10V, RGS = 11.0Ω
td(OFF)
tf
Turn-Off Delay Time
Fall Time
-
-
tOFF
Turn-Off Time
77
Drain-Source Diode Characteristics
I
I
SD = 41A
SD = 21A
-
-
-
-
-
-
-
-
1.25
1.0
39
V
V
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
ISD = 41A, dISD/dt =100A/µs
ISD = 41A, dISD/dt =100A/µs
ns
nC
QRR
Reverse Recovered Charge
42
Notes:
1: Starting T = 25°C, L = 0.11mH, I = 30A.
J
AS
2: Pulse Width = 100s
2
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
Typical Characteristics T = 25°C unless otherwise noted
C
1.2
50
V
= 10V
GS
1.0
40
0.8
30
0.6
20
0.4
0.2
0
10
0
150
0
25
50
75
100
175
125
o
25
50
75
100
125
150
175
o
T
, CASE TEMPERATURE ( C)
C
T
, CASE TEMPERATURE ( C)
C
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P x Z
x R
+ T
J
DM
θJC
θJC C
0.01
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
500
o
T
= 25 C
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
V
= 10V
GS
100
30
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
10
10
10
Figure 4. Peak Current Capability
3
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
Typical Characteristics T = 25°C unless otherwise noted
C
200
100
200
10µs
If R = 0
= (L)(I )/(1.3*RATED BV
t
- V
)
AV
If R
AS
DSS
DD
100
≠
0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
AS
- V ) +1]
DD
AV
DSS
100µs
10
1
OPERATION IN THIS
AREA MAY BE
o
STARTING T = 25 C
J
LIMITED BY r
DS(ON)
10
1ms
10ms
DC
o
STARTING T = 150 C
J
SINGLE PULSE
T
T
= MAX RATED
= 25 C
J
o
C
1
0.1
0.001
0.01
0.1
, TIME IN AVALANCHE (ms)
1
10
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
200
V
t
DS
AV
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
80
80
PULSE DURATION = 80µs
o
V
= 10V
T
= 25 C
GS
C
DUTY CYCLE = 0.5% MAX
V
= 7V
GS
V
= 15V
DD
60
40
20
0
60
40
20
0
V
= 6V
GS
o
T
= 175 C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T
= 25 C
J
o
T
= -55 C
J
V
= 5V
2.0
GS
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
0.5
1.0
1.5
2.5
3.0
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
GS
DS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
40
35
30
25
20
15
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
V
= 6V
GS
V
= 10V
GS
V
= 10V, I = 41A
GS
D
0
10
20
30
40
50
-80
-40
0
40
80
120
160
200
o
I , DRAIN CURRENT (A)
T , JUNCTION TEMPERATURE ( C)
D
J
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
4
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
Typical Characteristics T = 25°C unless otherwise noted
C
1.2
1.0
0.8
0.6
0.4
1.2
1.1
1.0
0.9
I
= 250µA
D
V
= V , I = 250µA
DS D
GS
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
3000
10
V
= 50V
DD
C
= C + C
GS GD
ISS
1000
100
10
8
6
4
2
0
C
C
+ C
OSS
DS GD
C
= C
GD
RSS
WAVEFORMS IN
DESCENDING ORDER:
I
I
= 41A
= 6A
D
D
V
= 0V, f = 1MHz
GS
0
5
10
15
20
25
30
0.1
1
10
100
V
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
DS
g
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
5
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
Test Circuits and Waveforms
V
DS
BV
DSS
t
P
L
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
V
DS
V
Q
DD
g(TOT)
V
L
DS
V
GS
V
= 10V
GS
V
GS
+
-
Q
gs2
V
DD
DUT
V
= 2V
GS
I
g(REF)
0
Q
g(TH)
Q
Q
gs
gd
I
g(REF)
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
V
DS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
R
L
t
t
f
r
V
DS
90%
90%
+
-
V
GS
V
DD
10%
10%
0
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
V
10%
GS
0
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
6
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
PSPICE Electrical Model
.SUBCKT FDP3672 2 1 3 ;
Ca 12 8 5.8e-10
Cb 15 14 6.8e-10
Cin 6 8 1.6e-9
rev October 2002
LDRAIN
DPLCAP
DRAIN
2
5
10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
RLDRAIN
RSLC1
51
DBREAK
+
RSLC2
5
51
ESLC
11
Ebreak 11 7 17 18 105
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
-
+
50
-
17
DBODY
RDRAIN
6
8
EBREAK 18
-
ESG
EVTHRES
+
16
21
+
-
19
8
MWEAK
LGATE
EVTEMP
RGATE
GATE
1
6
+
-
18
22
It 8 17 1
MMED
9
20
MSTRO
8
RLGATE
Lgate 1 9 9.56e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 4.45e-9
LSOURCE
CIN
SOURCE
3
7
RSOURCE
RLSOURCE
RLgate 1 9 95.6
RLdrain 2 5 10
RLsource 3 7 44.5
S1A
S2A
RBREAK
12
15
13
8
14
13
17
18
RVTEMP
19
-
S1B
S2B
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
13
CB
CA
IT
14
+
+
VBAT
6
8
5
8
EGS
EDS
+
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 6.0e-3
Rgate 9 20 1.5
-
-
8
22
RVTHRES
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 9.5e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*98),3))}
.MODEL DbodyMOD D (IS=1.0E-11 N=1.05 RS=3.7e-3 TRS1=2.5e-3 TRS2=1.0e-6
+ CJO=1.2e-9 M=0.58 TT=3.75e-8 XTI=4.0)
.MODEL DbreakMOD D (RS=15 TRS1=4.0e-3 TRS2=-5.0e-6)
.MODEL DplcapMOD D (CJO=3.8e-10 IS=1.0e-30 N=10 M=0.60)
.MODEL MmedMOD NMOS (VTO=3.6 KP=3 IS=1e-40 N=10 TOX=1 L=1u W=1u RG=1.5)
.MODEL MstroMOD NMOS (VTO=4.3 KP=59 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=3.09 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=15 RS=0.1)
.MODEL RbreakMOD RES (TC1=9.0e-4 TC2=-1.0e-7)
.MODEL RdrainMOD RES (TC1=11.0e-3 TC2= 6.1e-5)
.MODEL RSLCMOD RES (TC1=3.0e-3 TC2=1.0e-6)
.MODEL RsourceMOD RES (TC1=4.0e-3 TC2=1.0e-6)
.MODEL RvthresMOD RES (TC1=-3.5e-3 TC2=-1.5e-5)
.MODEL RvtempMOD RES (TC1=-4.3e-3 TC2=1.5e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5.0 VOFF=-3.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-5.0)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=0.3)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.5)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
7
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
SABER Electrical Model
REV October 2002
template FDP3672 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=1.0e-11,nl=1.05,rs=3.7e-3,trs1=2.5e-3,trs2=1.0e-6,cjo=1.2e-9,m=0.58,tt=3.75e-8,xti=4.0)
dp..model dbreakmod = (rs=15,trs1=4.0e-3,trs2=-5.0e-6)
dp..model dplcapmod = (cjo=3.8e-10,isl=10.0e-30,nl=10,m=0.60)
m..model mmedmod = (type=_n,vto=3.6,kp=3,is=1e-40, tox=1)
m..model mstrongmod = (type=_n,vto=4.3,kp=59,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=3.09,kp=0.05,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-5.0,voff=-3.5)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-5.0)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.5,voff=0.3)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.3,voff=-0.5)
c.ca n12 n8 = 5.8e-10
LDRAIN
DPLCAP
DRAIN
2
5
10
RLDRAIN
RSLC1
51
c.cb n15 n14 = 6.8e-10
c.cin n6 n8 = 1.6e-9
RSLC2
ISCL
DBREAK
11
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
50
-
RDRAIN
6
8
ESG
DBODY
EVTHRES
+
16
21
+
-
19
8
MWEAK
spe.ebreak n11 n7 n17 n18 = 105
LGATE
EVTEMP
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
RGATE
GATE
1
6
+
-
18
22
EBREAK
+
MMED
9
20
MSTRO
8
17
18
-
RLGATE
LSOURCE
CIN
SOURCE
3
7
RSOURCE
i.it n8 n17 = 1
RLSOURCE
S1A
S2A
RBREAK
l.lgate n1 n9 = 95.6e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 4.45e-9
12
15
13
14
13
17
18
8
RVTEMP
19
S1B
S2B
13
CB
CA
res.rlgate n1 n9 = 9.56
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 44.5
IT
14
-
+
+
VBAT
6
8
5
8
EGS
EDS
+
-
-
8
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
22
RVTHRES
res.rbreak n17 n18 = 1, tc1=9.0e-4,tc2=-1.0e-7
res.rdrain n50 n16 = 6.0e-3, tc1=11.0e-3,tc2=6.1e-5
res.rgate n9 n20 = 1.5
res.rslc1 n5 n51 = 1.0e-6, tc1=3.0e-3,tc2=1.0e-6
res.rslc2 n5 n50 = 1.0e3
res.rsource n8 n7 = 9.5e-3, tc1=4.0e-3,tc2=1.0e-6
res.rvthres n22 n8 = 1, tc1=-3.5e-3,tc2=-1.5e-5
res.rvtemp n18 n19 = 1, tc1=-4.3e-3,tc2=1.5e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/98))** 3))
}
8
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
SPICE Thermal Model
JUNCTION
th
REV October 2002
FDP3672
CTHERM1 TH 6 3.2e-3
CTHERM2 6 5 3.3e-3
CTHERM3 5 4 3.4e-3
CTHERM4 4 3 3.5e-3
CTHERM5 3 2 6.4e-3
CTHERM6 2 TL 1.9e-2
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
RTHERM1 TH 6 5.5e-4
RTHERM2 6 5 5.0e-3
RTHERM3 5 4 4.5e-2
RTHERM4 4 3 10.5e-2
RTHERM5 3 2 3.4e-1
RTHERM6 2 TL 3.5e-1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model FDP3672
template thermal_model th tl
thermal_c th, tl
{
cctherm.ctherm1 th 6 =3.2e-3
ctherm.ctherm2 6 5 =3.3e-3
ctherm.ctherm3 5 4 =3.4e-3
ctherm.ctherm4 4 3 =3.5e-3
ctherm.ctherm5 3 2 =6.4e-3
ctherm.ctherm6 2 tl =1.9e-2
4
3
2
rtherm.rtherm1 th 6 =5.5e-4
rtherm.rtherm2 6 5 =5.0e-3
rtherm.rtherm3 5 4 =4.5e-2
rtherm.rtherm4 4 3 =10.5e-2
rtherm.rtherm5 3 2 =3.4e-1
rtherm.rtherm6 2 tl =3.5e-1
}
tl
CASE
9
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
Mechanical Dimensions
TO-220 3L
Figure 21. TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimension in Millimeters
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
www.fairchildsemi.com
10
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
www.fairchildsemi.com
11
©2002 Fairchild Semiconductor Corporation
FDP3672 Rev. C2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号:
FDP3672_NL
Power Field-Effect Transistor, 5.9A I(D), 105V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
FAIRCHILD
FDP3682
STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY
TRIPATH
FDP3682_NL
Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
FAIRCHILD
FDP3N50NZ
Power Field-Effect Transistor, 3A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
FAIRCHILD
FDP4020PS62Z
Power Field-Effect Transistor, 16A I(D), 20V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明