FDP8441 [ONSEMI]
N 沟道 Power Trench® MOSFET 40V,80A,2.7mΩ;型号: | FDP8441 |
厂家: | ONSEMI |
描述: | N 沟道 Power Trench® MOSFET 40V,80A,2.7mΩ 局域网 开关 晶体管 |
文件: | 总9页 (文件大小:579K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
December 2012
FDP8441
®
N-Channel PowerTrench MOSFET
40V, 80A, 2.7mΩ
Features
Applications
Typ rDS(on) = 2.1mΩ at VGS = 10V, ID = 80A
Solenoid and Motor Drivers
Typ Qg(10) = 215nC at VGS = 10V
Low Miller Charge
Distributed Power Architectures and VRMs
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
©2012 Fairchild Semiconductor Corporation
FDP8441 Rev. C0
1
www.fairchildsemi.com
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
V
V
±20
Drain Current Continuous (TC < 160oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
80
ID
23
See Figure 4
947
A
EAS
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/oC
oC
Power dissipation
Derate above 25oC
300
PD
2
TJ, TSTG
Operating and Storage Temperature
-55 to 175
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
0.5
62
oC/W
oC/W
(Note 2)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
N/A
Quantity
FDP8441
FDP8441
TO-220AB
Tube
50 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
40
-
-
-
-
-
-
V
1
VDS = 32V
µA
nA
VGS = 0V
TJ = 150°C
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VDS = VGS, ID = 250µA
D = 80A, VGS = 10V
2
-
2.8
2.1
4
V
I
2.7
mΩ
ID = 80A, VGS = 10V,
TJ = 175°C
-
3.6
4.7
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
15000
1250
685
1.1
-
pF
pF
pF
Ω
VDS = 25V, VGS = 0V,
f = 1MHz
Coss
Crss
Output Capacitance
-
Reverse Transfer Capacitance
Gate Resistance
-
RG
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
-
280
38
-
Qg(TOT)
Qg(TH)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
215
29
nC
nC
nC
nC
nC
VGS = 0 to 2V
V
DD = 20V
ID = 35A
Ig = 1mA
60
Qgs2
Qgd
32
-
49
-
FDP8441 Rev. C0
2
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
23
24
75
17.9
-
77
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
-
-
VDD = 20V, ID = 35A
V
GS = 10V, RGS = 1.5Ω
td(off)
tf
-
-
toff
147
Drain-Source Diode Characteristics
I
SD = 35A
-
-
-
-
0.8
0.8
52
1.25
1.0
68
V
V
VSD
Source to Drain Diode Voltage
ISD = 15A
trr
Reverse Recovery Time
IF = 35A, di/dt = 100A/µs
IF = 35A, di/dt = 100A/µs
ns
nC
Qrr
Reverse Recovery Charge
76
99
Notes:
o
1: Starting T = 25 C, L = 0.46mH, I = 64A.
J
AS
2: Pulse width = 100s.
FDP8441 Rev. C0
3
www.fairchildsemi.com
Typical Characteristics
300
250
200
150
100
50
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
P
DM
0.1
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
1000
100
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDP8441 Rev. C0
4
www.fairchildsemi.com
Typical Characteristics
4000
1000
500
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
10us
If R
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AV
AS
DSS DD
100us
100
STARTING TJ = 25oC
10
LIMITED
BY PACKAGE
10
1
STARTING TJ = 150oC
1ms
10ms
DC
1
OPERATION IN THIS SINGLE PULSE
AREA MAY BE
LIMITED BY r
T
= MAX RATED
J
o
DS(on)
T
C
= 25 C
0.1
0.01
0.1
1
10
100
1000 5000
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
160
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 5V
120
120
80
40
0
VGS = 4.5V
TJ = 175oC
80
VGS = 4V
TJ = 25oC
TJ = -55oC
40
VGS = 3.5V
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
50
1.8
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
TJ = 25oC
TJ = 175oC
ID = 80A
GS = 10V
V
3
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDP8441 Rev. C0
5
www.fairchildsemi.com
Typical Characteristics
1.15
1.10
1.05
1.00
0.95
0.90
1.2
ID = 250µA
VGS = VDS
ID = 250µA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
40000
ID = 80A
Ciss
VDD = 15V
8
10000
VDD = 25V
6
Coss
VDD = 20V
4
2
0
1000
Crss
f = 1MHz
VGS = 0V
100
0
50
100
150
200
250
0.1
1
10
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
FDP8441 Rev. C0
6
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
F-PFS™
PowerTrench®
PowerXS™
The Power Franchise®
FRFET®
®
AccuPower™
AX-CAP™*
Global Power ResourceSM
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
Programmable Active Droop™
BitSiC®
QFET®
TinyBoost™
TinyBuck™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
QS™
Quiet Series™
RapidConfigure™
™
TinyCalc™
TinyLogic®
GTO™
IntelliMAX™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
ISOPLANAR™
Marking Small Speakers Sound Louder SignalWise™
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
TranSiC®
TriFault Detect™
TRUECURRENT®*
μSerDes™
MicroPak™
STEALTH™
®
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
SuperFET®
Fairchild®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
Sync-Lock™
®*
FastvCore™
FETBench™
FlashWriter®
FPS™
*
®
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I61
www.fairchildsemi.com
FDP8441 Rev. C0
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号:
FDP8441_F085
40V N-Channel PowerTrench® MOSFET, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 400/RAIL
FAIRCHILD
FDP8442_F085
Power Field-Effect Transistor, 23A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
FAIRCHILD
FDP8443_F085
Power Field-Effect Transistor, 20A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明