FDP8880_技术文档

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0

May 2008

tmM

FDP8880 / FDB8880

N-Channel PowerTrench MOSFET

®

30V, 54A, 11.6mΩ

General Description

Features

r_DS(ON)= 14.5mΩ, V_GS= 4.5V, I_D= 40A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r_DS(ON)= 11.6mΩ, V_GS= 10V, I_D= 40A

r

_DS(ON)and fast switching speed.

High performance trench technology for extremely low

r_DS(ON)

Application

Low gate charge

DC / DC Converters

High power and current handling capability

RoHS Complicant

DRAIN

(FLANGE)

DRAIN

(FLANGE)

D

S

GATE

SOURCE

DRAIN

GATE

G

SOURCE

TO-220AB

FDP SERIES

TO-263AB

FDB SERIES

www.fairchildsemicom

FDP8880 / FDB8880 Rev. A1

1

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

30

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

V

±20

Continuous (T_C= 25^oC, V_GS= 10V)

Continuous (T_C= 25^oC, V_GS= 4.5V)

Continuous (T_amb= 25^oC, V_GS= 10V, with R_θJA= 43^oC/W)

Pulsed

54

48

A

I_D

11

A

Figure 4

31

A

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

mJ

W

W/^oC

^oC

55

P_D

0.37

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-220,TO-263

2.73

62

^oC/W

Thermal Resistance Junction to Ambient TO-220,TO-262 ( Note 2)

Thermal Resistance Junction to Ambient TO-263, 1in²copper pad area

43

Package Marking and Ordering Information

Device Marking

Device

FDP8880

FDB8880

Package

TO-220AB

TO-263AB

Reel Size

Tube

Tape Width

Quantity

FDP8880

N/A

50 units

FDB8880

330mm

24mm

800 units

F

Electrical Characteristics ^T_C= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

B_VDSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I_D= 250µA, V_GS= 0V

30

-

V

_DS= 24V

1

I_DSS

µA

nA

V_GS= 0V

T_C= 150^oC

-

250

±100

I_GSS

V_GS= ±20V

-

On Characteristics

V_GS(TH)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250µA

_D= 40A, V_GS= 10V

I_D= 40A, V_GS= 4.5V

1.2

-

2.5

V

I

-

0.0095 0.0116

0.012 0.0145

r_DS(ON)

Drain to Source On Resistance

Ω

I

_D= 40A, V_GS= 10V,

-

0.015 0.019

T_J= 175^oC

FDP8880 / FDB8880 Rev. A1

www.fairchildsemicom

2

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

R_G

Input Capacitance

-

1240

255

147

2.7

22

-

pF

Ω

V_DS= 15V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

-

V_GS= 0.5V, f = 1MHz

V_GS= 0V to 10V

V_GS= 0V to 5V

-

Q_g(TOT)

Q_g(5)

Q_g(TH)

Q_gs

Total Gate Charge at 10V

Total Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

29

16

2.1

-

nC

12

V_DD= 15V

_D= 40A

I_g= 1.0mA

V_GS= 0V to 1V

1.6

3.2

2.0

4.8

I

Q_gs2

Q_gd

-

Switching Characteristics (V_GS= 10V)

t_ON

t_d(ON)

t_r

Turn-On Time

Turn-On Delay Time

Rise Time

-

8

171

ns

-

107

47

51

-

V_DD= 15V, I_D= 40A

V_GS= 10V, R_GS= 13.6Ω

t_d(OFF)

t_f

Turn-Off Delay Time

Fall Time

-

t_OFF

Turn-Off Time

147

Drain-Source Diode Characteristics

I

_SD= 40A

_SD= 3.5A

-

1.25

1.0

27

V

V_SD

Source to Drain Diode Voltage

t_rr

Reverse Recovery Time

I_SD= 40A, dI_SD/dt = 100A/µs

ns

nC

Q_RR

Reverse Recovered Charge

18

Notes:

1: Starting T = 25°C, L = 34uH, I = 43A,Vdd = 27V, Vgs = 10V.

J

AS

2: Pulse width = 100s.

3

FDP8880 / FDB8880 Rev. A1

www.fairchildsemicom

3

Typical Characteristics T_C= 25°C unless otherwise noted

1.2

60

1.0

0.8

40

0.6

0.4

20

0.2

0

150

0

25

50

75

100

175

125

o

25

50

75

100

125

150

175

o

T

, CASE TEMPERATURE ( C)

C

T

, CASE TEMPERATURE ( C)

C

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

1

0.1

0.05

0.02

0.01

P

DM

0.1

t

1

t

2

NOTES:

DUTY FACTOR: D = t /t

1

2

SINGLE PULSE

0.01

PEAK T = P x Z

x R

+ T

J

DM

θJC

θJC C

-5

-4

-3

-2

-1

0

1

10

t, RECTANGULAR PULSE DURATION (s)

10

Figure 3. Normalized Maximum Transient Thermal Impedance

600

o

T

= 25 C

C

FOR TEMPERATURES

o

ABOVE 25 C DERATE PEAK

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

CURRENT AS FOLLOWS:

175 - T

150

C

I = I

25

V

= 10V

GS

V

= 4.5V

GS

100

50

-5

-4

-3

-2

-1

0

1

10

t, PULSE WIDTH (s)

10

Figure 4. Peak Current Capability

FDP8880 / FDB8880 Rev. A1

www.fairchildsemicom

4

Typical Characteristics T_C= 25°C unless otherwise noted

400

100

500

If R = 0

= (L)(I )/(1.3*RATED BV

t

AV

- V

DD

)

AS

DSS

10µs

If R ≠ 0

t

= (L/R)ln[(I *R)/(1.3*RATED BV

- V ) +1]

DSS DD

AV

AS

100

100µs

10

1

1ms

o

STARTING T = 25 C

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

DS(ON)

J

10

10ms

SINGLE PULSE

o

STARTING T = 150 C

J

T

= MAX RATED

J

DC

o

T

= 25 C

C

0.1

1

0.001

0.01

0.1

t , TIME IN AVALANCHE (ms)

AV

1

10

100

1

10

, DRAIN TO SOURCE VOLTAGE (V)

40

V

DS

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 5. Forward Bias Safe Operating Area

80

160

PULSE DURATION = 80µs

V

= 4.5V

GS

V

= 3.5V

DUTY CYCLE = 0.5% MAX

GS

V

= 15V

DD

120

80

40

0

60

40

20

0

V

= 10V

GS

V

= 3V

GS

o

T

= 175 C

J

o

T

= 25 C

C

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

o

T

= 25 C

J

T = -55 C

J

V

= 2.5V

0.75

GS

0

0.25

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

, GATE TO SOURCE VOLTAGE (V)

V

, DRAIN TO SOURCE VOLTAGE (V)

GS

DS

Figure 7. Transfer Characteristics

Figure 8. Saturation Characteristics

20

1.7

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

I

= 54A

D

1.53

1.36

1.19

1.02

16

12

8

I

= 5A

D

0.85

0.7

V

= 10V, I = 54A

D

GS

2

4

6

8

10

-80

-40

0

40

80

120

160

200

o

T , JUNCTION TEMPERATURE ( C)

V

, GATE TO SOURCE VOLTAGE (V)

J

GS

Figure 9. Drain to Source On Resistance vs Gate

Voltage and Drain Current

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDP8880 / FDB8880 Rev. A1

www.fairchildsemicom

5

Typical Characteristics T_C= 25°C unless otherwise noted

1.1

1.5

I

= 250µA

D

V

= V , I = 250µA

DS D

GS

1.2

1.0

0.9

0.6

0.3

0.9

-80

-40

0

40

80

120

160

200

-80

-40

0

40

80

120

160

200

o

T , JUNCTION TEMPERATURE ( C)

J

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

2000

10

V

= 15V

DD

8

6

4

2

0

C

= C + C

GS GD

ISS

1000

C

+ C

OSS

DS GD

C

= C

GD

RSS

WAVEFORMS IN

DESCENDING ORDER:

I

= 54A

= 5A

D

V

= 0V, f = 1MHz

GS

100

0.1

0

5

10

15

20

25

30

1

10

V

, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

DS

g

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge Waveforms for Constant

Gate Current

FDP8880 / FDB8880 Rev. A1

www.fairchildsemicom

6

Test Circuits and Waveforms

V

DS

BV

DSS

t

P

L

V

DS

I

VARY t TO OBTAIN

P

AS

+

-

V

DD

R

REQUIRED PEAK I

G

AS

V

DD

V

GS

DUT

t

P

I

0V

AS

0

0.01Ω

t

AV

Figure 15. Unclamped Energy Test Circuit

Figure 16. Unclamped Energy Waveforms

V

DS

V

Q

DD

g(TOT)

V

DS

GS

L

V

= 10V

GS

Q

V

g(5)

GS

+

Q

gs2

V

= 5V

DD

GS

-

DUT

V

= 1V

GS

I

g(REF)

0

Q

g(TH)

Q

gs

gd

I

g(REF)

0

Figure 17. Gate Charge Test Circuit

Figure 18. Gate Charge Waveforms

V

DS

t

ON

OFF

t

d(OFF)

t

d(ON)

R

t

f

L

r

V

DS

90%

+

-

V

GS

V

DD

10%

0

DUT

90%

50%

R

GS

V

GS

50%

PULSE WIDTH

V

10%

GS

0

Figure 19. Switching Time Test Circuit

Figure 20. Switching Time Waveforms

FDP8880 / FDB8880 Rev. A1

www.fairchildsemicom

7

PSPICE Electrical Model

.SUBCKT FDP8880 2 1 3 ; rev October 2004

Ca 12 8 9.5e-10

Cb 15 14 9.5e-10

Cin 6 8 1.15e-9

LDRAIN

DPLCAP

DRAIN

2

5

10

Dbody 7 5 DbodyMOD

Dbreak 5 11 DbreakMOD

Dplcap 10 5 DplcapMOD

RLDRAIN

RSLC1

51

DBREAK

+

RSLC2

5

ESLC

11

51

Ebreak 11 7 17 18 32.88

Eds 14 8 5 8 1

Egs 13 8 6 8 1

Esg 6 10 6 8 1

Evthres 6 21 19 8 1

-

+

50

-

17

DBODY

RDRAIN

6

8

EBREAK 18

-

ESG

EVTHRES

+

16

21

+

-

19

8

MWEAK

Evtemp 20 6 18 22 1

LGATE

EVTEMP

RGATE

GATE

1

6

+

-

18

22

MMED

It 8 17 1

9

20

MSTRO

8

RLGATE

Lgate 1 9 5.3e-9

Ldrain 2 5 1.0e-9

Lsource 3 7 1.7e-9

LSOURCE

CIN

SOURCE

3

7

RSOURCE

RLSOURCE

RLgate 1 9 53

RLdrain 2 5 10

RLsource 3 7 17

S1A

S2A

RBREAK

12

15

13

14

13

17

18

8

RVTEMP

19

-

S1B

S2B

Mmed 16 6 8 8 MmedMOD

Mstro 16 6 8 8 MstroMOD

Mweak 16 21 8 8 MweakMOD

13

CB

CA

IT

14

+

VBAT

6

8

5

8

EGS

EDS

+

Rbreak 17 18 RbreakMOD 1

Rdrain 50 16 RdrainMOD 1.0e-3

Rgate 9 20 2.2

-

8

22

RVTHRES

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

Rsource 8 7 RsourceMOD 6.8e-3

Rvthres 22 8 RvthresMOD 1

Rvtemp 18 19 RvtempMOD 1

S1a 6 12 13 8 S1AMOD

S1b 13 12 13 8 S1BMOD

S2a 6 15 14 13 S2AMOD

S2b 13 15 14 13 S2BMOD

Vbat 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}

.MODEL DbodyMOD D (IS=3E-12 IKF=10 N=1.01 RS=5e-3 TRS1=8e-4 TRS2=2e-7

+ CJO=4.8e-10 M=0.55 TT=1e-11 XTI=2)

.MODEL DbreakMOD D (RS=0.2 TRS1=1e-3 TRS2=-8.8e-6)

.MODEL DplcapMOD D (CJO=5.5e-10 IS=1e-30 N=10 M=0.45)

.MODEL MstroMOD NMOS (VTO=2.10 KP=170 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL MmedMOD NMOS (VTO=1.75 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.2)

.MODEL MweakMOD NMOS (VTO=1.39 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=22 RS=0.1)

.MODEL RbreakMOD RES (TC1=8.0e-4 TC2=-8e-7)

.MODEL RdrainMOD RES (TC1=-12e-3 TC2=.35e-4)

.MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6)

.MODEL RsourceMOD RES (TC1=5e-3 TC2=1e-6)

.MODEL RvtempMOD RES (TC1=-2.78e-3 TC2=1.5e-6)

.MODEL RvthresMOD RES (TC1=-1e-3 TC2=-8.2e-6)

MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)

.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.3 VOFF=-0.8)

.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.8 VOFF=-1.3)

.ENDS

Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank

Wheatley.

FDP8880 / FDB8880 Rev. A1

www.fairchildsemicom

8

SABER Electrical Model

rev October 2004

template FDP8880 n2,n1,n3

electrical n2,n1,n3

{

var i iscl

dp..model dbodymod = (isl=3e-12,ikf=10,nl=1.01,rs=5e-3,trs1=8e-4,trs2=2e-7,cjo=4.8e-10,m=0.55,tt=1e-11,xti=2)

dp..model dbreakmod = (rs=0.2,trs1=1e-3,trs2=-8.8e-6)

dp..model dplcapmod = (cjo=5.5e-10,isl=10e-30,nl=10,m=0.45)

m..model mstrongmod = (type=_n,vto=2.10,kp=170,is=1e-30, tox=1)

m..model mmedmod = (type=_n,vto=1.75,kp=10,is=1e-30, tox=1)

m..model mweakmod = (type=_n,vto=1.39,kp=0.05,is=1e-30, tox=1,rs=0.1)

sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3.5)

LDRAIN

sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-4)

sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.3,voff=-0.8)

sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-0.8,voff=-1.3)

c.ca n12 n8 = 9.5e-10

c.cb n15 n14 = 9.5e-10

c.cin n6 n8 = 1.15e-9

DPLCAP

DRAIN

2

5

10

RLDRAIN

RSLC1

51

RSLC2

ISCL

dp.dbody n7 n5 = model=dbodymod

dp.dbreak n5 n11 = model=dbreakmod

dp.dplcap n10 n5 = model=dplcapmod

DBREAK

11

50

-

RDRAIN

6

8

ESG

DBODY

EVTHRES

+

16

21

+

-

19

8

spe.ebreak n11 n7 n17 n18 = 32.88

spe.eds n14 n8 n5 n8 = 1

spe.egs n13 n8 n6 n8 = 1

MWEAK

LGATE

EVTEMP

RGATE

GATE

1

6

+

-

18

22

EBREAK

+

MMED

9

20

spe.esg n6 n10 n6 n8 = 1

spe.evthres n6 n21 n19 n8 = 1

spe.evtemp n20 n6 n18 n22 = 1

MSTRO

8

17

18

-

RLGATE

LSOURCE

CIN

SOURCE

3

7

RSOURCE

i.it n8 n17 = 1

RLSOURCE

S1A

S2A

l.lgate n1 n9 = 5.3e-9

l.ldrain n2 n5 = 1.0e-9

l.lsource n3 n7 = 1.7e-9

RBREAK

12

15

13

8

14

13

17

18

RVTEMP

19

S1B

S2B

13

CB

res.rlgate n1 n9 = 53

res.rldrain n2 n5 = 10

res.rlsource n3 n7 = 17

CA

IT

14

-

+

VBAT

6

8

5

8

EGS

EDS

+

-

8

m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u

22

m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u

m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u

RVTHRES

res.rbreak n17 n18 = 1, tc1=8.0e-4,tc2=-8e-7

res.rdrain n50 n16 = 1.0e-3, tc1=-12e-3,tc2=.35e-4

res.rgate n9 n20 = 2.2

res.rslc1 n5 n51 = 1e-6, tc1=9e-4,tc2=1e-6

res.rslc2 n5 n50 = 1e3

res.rsource n8 n7 = 6.8e-3, tc1=5e-3,tc2=1e-6

res.rvthres n22 n8 = 1, tc1=-1e-3,tc2=-8.2e-6

res.rvtemp n18 n19 = 1, tc1=-2.78e-3,tc2=1.5e-6

sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod

sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod

sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod

sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc=1

equations {

i (n51->n50) +=iscl

iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/170))** 5))}

}

FDP8880 / FDB8880 Rev. A1

www.fairchildsemicom

9

PSPICE Thermal Model

JUNCTION

th

REV 23 December 2003

FDP8880T

CTHERM1 TH 6 8e-4

CTHERM2 6 5 1e-3

CTHERM3 5 4 2.5e-3

CTHERM4 4 3 2.6e-3

CTHERM5 3 2 8e-3

CTHERM6 2 TL 1.5e-2

RTHERM1

RTHERM2

RTHERM3

RTHERM4

RTHERM5

RTHERM6

CTHERM1

6

RTHERM1 TH 6 1.44e-1

RTHERM2 6 5 1.9e-1

RTHERM3 5 4 3.0e-1

RTHERM4 4 3 4.0e-1

RTHERM5 3 2 5.7e-1

RTHERM6 2 TL 5.8e-1

CTHERM2

CTHERM3

CTHERM4

CTHERM5

CTHERM6

5

SABER Thermal Model

SABER thermal model FDP8880T

template thermal_model th tl

thermal_c th, tl

{

ctherm.ctherm1 th 6 =8e-4

ctherm.ctherm2 6 5 =1e-3

ctherm.ctherm3 5 4 =2.5e-3

ctherm.ctherm4 4 3 =2.6e-3

ctherm.ctherm5 3 2 =8e-3

ctherm.ctherm6 2 tl =1.5e-2

4

3

2

rtherm.rtherm1 th 6 =1.44e-1

rtherm.rtherm2 6 5 =1.9e-1

rtherm.rtherm3 5 4 =3.0e-1

rtherm.rtherm4 4 3 =4.0e-1

rtherm.rtherm5 3 2 =5.7e-1

rtherm.rtherm6 2 tl =5.8e-1

}

tl

CASE

FDP8880 / FDB8880 Rev. A1

www.fairchildsemicom

10

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global

subsidianries, and is not intended to be an exhaustive list of all such trademarks.

ACEx^®

FPS™

PDP-SPM™

The Power Franchise^®

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK^®

EfficentMax™

F-PFS™

Power-SPM™

PowerTrench^®

Programmable Active Droop™

QFET^®

QS™

Quiet Series™

RapidConfigure™

FRFET^®

Global Power Resource^SM

Green FPS™

Green FPS™ e-Series™

GTO™

TinyBoost™

TinyBuck™

TinyLogic^®

TINYOPTO™

TinyPower™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

Saving our world 1mW at a time™ TinyPWM™

EZSWITCH™ *

SmartMax™

SMART START™

SPM^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SuperMOS™

®

TinyWire™

µSerDes™

™

®

MicroPak™

Fairchild^®

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC^®

UHC^®

Ultra FRFET™

UniFET™

VCX™

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

FAST^®

OPTOPLANAR^®

VisualMax™

®

FastvCore™

tm

FlashWriter^®

*

* EZSWITCH™ and FlashWriter^®are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER

ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body or (b)

support or sustain life, and (c) whose failure to perform when

properly used in accordance with instructions for use provided

in the labeling, can be reasonably expected to result in a

significant injury of the user.

2. A critical component in any component of a life support,

device, or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Advance Information

Formative or In Design

This datasheet contains preliminary data; supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve design.

Preliminary

First Production

This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

This datasheet contains specifications on a product that is discontinued by

Fairchild Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I34

@2008 Fairchild Semiconductor Corporation

WWW. fairchildsemicom

FDP8880 / FDB8880 Rev.A1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

www.onsemi.com

1


型号：	FDP8880
厂家：	ONSEMI
描述：	N 沟道 PowerTrench® MOSFET 30V，54A，11.6mΩ 局域网 PC 开关晶体管
文件：	总13页 (文件大小：512K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDP8880 [ONSEMI]

相关型号：

FDP8880_08

FDP8880_NL

FDP8896

FDP8896

FDP8896_08

FDP8896_F085

FDP8D5N10C

FDP8G30

FDP8GGY

FDP8N50NZ

FDP8N50NZ

FDP8N50NZF