FDS3580 [ONSEMI]
N 沟道，PowerTrench® MOSFET，80V，7.6A，29mΩ;
| 型号： | FDS3580 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，80V，7.6A，29mΩ 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS3580
80V N-Channel PowerTrench MOSFET
General Description
Features
• 7.6 A, 80 V. RDS(ON = 0.029 Ω @ VGS = 10 V
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
)
RDS(ON) = 0.033 Ω @ VGS = 6 V.
• Low gate charge (34nC typical).
• Fast switching speed.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
• High performance trench technology for extremely
low RDS(ON)
.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
• High power and current handling capability.
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
80
V
V
A
20
±
(Note 1a)
(Note 1a)
7.6
50
PD
Power Dissipation for Single Operation
2.5
W
(Note 1b)
(Note 1c)
1.2
1
C
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°
Thermal Characteristics
θ
θJC
(Note 1a)
(Note 1)
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
50
25
C/W
C/W
JA
°
°
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS3580
FDS3580
13’’
12mm
2500 units
2000 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDS3580/D
TA = 25°C unless otherwise noted
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min Typ Max Units
(Note 2)
Drain-Source Avalanche Ratings
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 40 V, ID = 7.6 A
245
7.6
mJ
A
IAR
Maximum Drain-Source Avalanche Current
Off Characteristics
µ
VGS = 0 V, ID = 250 A
BVDSS
Drain-Source Breakdown Voltage
80
V
∆
µ
°
°
Breakdown Voltage Temperature
Coefficient
81
DSS
BV
∆
ID = 250 A, Referenced to 25 C
mV/ C
TJ
µ
IDSS
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
VDS = 64 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
1
A
IGSSF
IGSSR
100
-100
nA
nA
(Note 2)
On Characteristics
µ
VGS(th)
Gate Threshold Voltage
2
2.5
-7
4
V
V
DS = VGS, ID = 250
A
∆
µ
°
°
Gate Threshold Voltage
Temperature Coefficient
GS(th)
V
ID = 250 A, Referenced to 25 C
mV/ C
∆
TJ
Ω
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 7.6 A
VGS = 10 V, ID = 7.6 A, TJ=125 C
0.022 0.029
0.037 0.055
0.024 0.033
°
VGS
= 6 V, ID = 7 A
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS = 5 V
30
A
S
Forward Transconductance
VDS = 5 V, ID = 7.6 A
28
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
V
DS = 25 V, VGS = 0 V,
1800
180
90
pF
pF
pF
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD = 40 V, ID = 1 A,
13
8
26
20
60
30
46
ns
ns
Ω
VGS = 10 V, RGEN = 6
34
16
34
6.1
6.9
ns
ns
Qg
Qgs
Qgd
V
V
DS = 40 V, ID = 7.6 A,
GS = 10 V
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.1
1.2
A
V
(Note 2)
VSD
Notes:
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
0.74
1:
RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
c) 125° C/W when
mounted on a minimum
pad.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
Scale
1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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2
Typical Characteristics
60
2
1.8
1.6
1.4
1.2
1
VGS = 10V
5.0V
6.0V
50
VGS = 4.0V
4.5V
40
30
20
10
0
4.5V
5.0V
4.0V
6.0V
7.0V
10V
3.5V
4
0.8
0
1
2
3
5
0
10
20
30
40
50
60
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation
Figure 1. On-Region Characteristics.
with Drain Current and Gate Voltage.
2
0.06
0.05
0.04
0.03
0.02
0.01
0
ID = 3.8A
ID = 7.6A
VGS = 10V
1.8
1.6
1.4
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
60
50
40
30
20
10
0
100
10
TA = -55oC
VDS = 5V
VGS = 0V
25oC
125oC
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
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3
Typical Characteristics (continued)
10
2400
2000
1600
1200
800
400
0
f = 1MHz
VGS = 0 V
ID = 7.6A
VDS = 10V
20V
8
40V
CISS
6
4
2
0
COSS
CRSS
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
80
Qg, GATE CHARGE (nC)
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
100
SINGLE PULSE
RθJA=125°C/W
TA = 25°C
100µs
1ms
10ms
100ms
RDS(ON) LIMIT
10
1
1s
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
0.1
0.01
T
A = 25oC
0.1
1
10
100
0.001
0.01
0.1
1
10
100 300
SINGLE PULSE TIME (SEC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
θ
J A
θ
0.2
0.2
R
= 125°C/W
J A
θ
0. 1
0.1
0.05
0.05
P(pk )
0.02
t
0.02
1
0. 0 1
t
2
0.01
S i n g le P ul s e
T
- T = P
*
R
( t)
JA
J
A
θ
00. 05
Du t
y
C y c l e, D= t /t
2
1
00. 02
00. 01
0.0001
0.001
0.01
0.1
, TIME (se c)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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