FDS4141-F085 [ONSEMI]
P 沟道，PowerTrench® MOSFET，-40V，-10.8A，19.0mΩ;
| 型号： | FDS4141-F085 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-40V，-10.8A，19.0mΩ |
| 文件： | 总8页 (文件大小：399K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS4141-F085
®
P-Channel PowerTrench MOSFET
-40V, -10.8A, 19.0mΩ
Applications
Control switch in synchronous & non-synchronous buck
Features
Typ rDS(on) = 10.5mΩ at VGS = -10V, ID = -10.5A
Typ rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -8.4A
Typ Qg(TOT) = 35nC at VGS = -10V
Load switch
Inverter
High performance trench technology for extremely low
rDS(on)
RoHS Compliant
Qualified to AEC Q101
D
D
G
S
S
S
D
D
D
D
5
6
7
8
4
3
2
1
D
D
G
SO-8
S
S
Pin 1
S
Publication Order Number:
©2009Semiconductor Components Industries, LLC.
September-2017,Rev. 1
FDS4141-F085/D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
-40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
VGS
±20
Drain Current Continuous (VGS = 10V)
Pulsed
-10.8
-36
ID
A
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
229
mJ
W
oC
1.6
TJ, TSTG Operating and Storage Temperature
-55 to +150
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area
30
81
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2500 units
FDS4141
FDS4141-F085
SO-8
13”
12mm
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
VDS = -32V,
-40
-
-
-
-
-1
V
-
-
µA
nA
IGSS
VGS = ±20V,
±100
On Characteristics
VGS(th)
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1.0
-1.7
10.5
14.8
-3.0
13.0
19.0
V
mΩ
S
I
D = -10.5A, VGS = -10V
-
-
ID = -8.4A, VGS = -4.5V
Drain to Source On Resistance
Forward Transconductance
ID = -10.5A, VGS = -10V,
TJ = 125oC
-
15.3
34
19.0
ID = -10.5A, VDD = -5V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
2005
355
190
5.0
-
pF
pF
pF
Ω
VDS = -20V, VGS = 0V,
f = 1MHz
Coss
Crss
Rg
Output Capacitance
-
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
-
45
24.2
-
Qg(TOT)
Qg(-5)
Qgs
Total Gate Charge at -10V
Total Gate Charge at -5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VGS = 0 to -10V
35
nC
nC
nC
nC
VGS = 0 to -5V
-
-
18.6
5.2
VDD = -20V
ID = -10.5A
Qgd
-
6.6
-
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2
Electrical Characteristics TA = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
9.7
4.4
41
11.6
-
25
-
ns
ns
ns
ns
ns
ns
VDD = -20V, ID = -10.5A
VGS = -10V, RGEN = 6Ω
-
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
84
Drain-Source Diode Characteristics
I
SD = -10.5A
-
-
-
-
-0.8
-0.7
26
-1.3
-1.2
34
VSD
Source to Drain Diode Voltage
V
ISD = -2.1A
trr
Reverse Recovery Time
ns
IF = -10.5A, dSD/dt = 100A/µs
Qrr
Reverse Recovery Charge
13.4
17.4
nC
Notes:
o
1: Starting T = 25 C, L = 6.2mH, I = -8.6A
J
AS
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
www.onsemi.com
3
Typical Characteristics
9
6
3
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = -10V
VGS = -4.5V
RθJA = 81oC/W
25
50
75
100
125
oC
150
0
25
50
75
100
125
oC
)
150
TA, CASE TEMPERATURE
(
)
TA, CASE TEMPERATURE
(
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
P
DM
0.20
0.10
0.05
0.02
0.01
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
SINGLE PULSE
RθJA = 81oC/W
0.001
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
1
10
102
103
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
10
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS
= -10V
CURRENT AS FOLLOWS:
150 - TA
I = I2
5
125
SINGLE PULSE
RθJA = 81oC/W
1
10-3
10-2
10-1
1
10
102
103
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
Typical Characteristics
60
10
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
10
1
If R
≠ 0
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
1ms
STARTING TJ = 25oC
10ms
100ms
1s
STARTING TJ = 150oC
0.1
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
T
= MAX RATED
o
DC
J
LIMITED BY r
DS(on)
T
A
= 25 C
1
0.01
0.01
0.01
0.1
1
10
100
0.1
1
10
100 300
tAV, TIME IN AVALANCHE (ms)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514 and
AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
36
36
PULSE DURATION = 80
µs
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
VDD = -5V
VGS
=
-
10V
4.5V
4V
3.5V
27
18
9
27
18
9
VGS
VGS
VGS
=
=
=
-
-
-
TJ = 150oC
VGS = -3V
TJ = -55oC
TJ = 25oC
0
0
0
1
2
3
4
0
1
2
3
-VGS, GATE TO SOURCE VOLTAGE (V)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
50
1.8
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID = -10.5A
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
TJ = 150oC
TJ = 25oC
ID
=
-
10.5A
VGS
=
-10V
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE
(
oC
)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
Typical Characteristics
1.10
1.05
1.00
0.95
0.90
1.4
1.2
1.0
0.8
0.6
0.4
VGS
ID
=
VDS
ID = -1mA
=
-250
µ
A
-80
-40
0
40
80
120
oC
160
-75 -50 -25
0
25 50 75 100 125 150
oC
TJ, JUNCTION TEMPERATURE
(
)
TJ, JUNCTION TEMPERATURE
(
)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
4000
ID = -10.5A
8
6
4
2
0
Ciss
VDD = -20V
1000
VDD = -15V
VDD = -25V
Coss
f = 1MHz
VGS = 0V
Crss
100
0.1
0
5
10
15
20
25
30
35
40
1
10
60
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE
(V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
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6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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