FDS4465-F085 [ONSEMI]
P 沟道，1.8V 指定，PowerTrench® MOSFET，-20V，-13.5A，8.5 mΩ;
| 型号： | FDS4465-F085 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，1.8V 指定，PowerTrench® MOSFET，-20V，-13.5A，8.5 mΩ |
| 文件： | 总6页 (文件大小：494K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS4465-F085
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET is a rugged
gate version of ON Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
• –13.5 A, –20 V. RDS(ON) = 8.5 mΩ @ VGS = –4.5 V
RDS(ON) = 10.5 mΩ @ VGS = –2.5 V
RDS(ON) = 14 mΩ @ VGS = –1.8 V
• Fast switching speed
Applications
• High performance trench technology for extremely
low RDS(ON)
• Power management
• Load switch
• High current and power handling capability
• Qualified to AEC Q101
• Battery protection
• RoHS Compliant
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8
S
S
S
Pin 1
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
–20
V
V
A
VGSS
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
±8
–13.5
–50
ID
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
PD
W
1.2
1
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1c)
(Note 1)
85
125
25
RθJA
RθJA
RθJC
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDS4465
FDS4465-F085
13’’
12mm
©2012 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
FDS4465-F085/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
V
GS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
–12
ID = –250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –16 V, VGS = 0 V
–1
µA
nA
nA
IGSSF
IGSSR
VGS = 8 V,
VDS = 0 V
VDS = 0 V
100
VGS = –8 V,
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.4
–0.6
3
–1.5
V
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
mV/°C
mΩ
Static Drain–Source
On–Resistance
VGS = –4.5 V,
VGS = –2.5 V,
VGS = –1.8 V,
ID = –13.5 A
ID = –12 A
ID = –10.5 A
6.7
8.0
9.8
9.0
8.5
10.5
14
13
V
GS=–4.5 V, ID =–13.5A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V,
VDS = –5 V
–50
A
S
Forward Transconductance
ID = –13.5 A
70
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
8237
1497
750
pF
pF
pF
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
20
24
36
38
ns
ns
VDD = –10V,
ID = –1 A,
RGEN = 6 Ω
V
GS = –4.5 V,
300
140
86
480
224
120
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = –10 V,
GS = –4.5 V
ID = –13.5 A,
V
20
11
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.1
–1.2
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V, IS = –2.1 A (Note 2)
–0.6
Voltage
Notes
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50 °C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105 °C/W when
mounted on a 04 in2
pad of 2 oz copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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2
Typical Characteristics
50
3
2.6
2.2
1.8
1.4
1
VGS = -4.5V
-2.0V
40
-2.5V
-1.5V
-1.8V
30
20
10
0
VGS = -1.5V
-1.8V
-2.0V
-2.5V
-4.5V
0.6
0
0.5
1
1.5
0
10
20
30
40
50
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.025
ID = -13.5A
VGS = -10V
ID = -6.3A
0.02
0.015
0.01
0.005
0
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
0
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
40
30
20
10
0
100
VGS = 0V
VDS = -5.0V
10
TA = 125oC
1
25oC
0.1
-55oC
TA = 125oC
0.01
25oC
0.001
-55oC
0.0001
0
0.5
1
1.5
2
0
0.2
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
5
10000
8000
6000
4000
2000
0
f = 1 MHz
VGS = 0 V
VDS = -5V
ID = -13.5A
CISS
-10V
4
3
2
1
0
-15V
COSS
CRSS
0
20
40
60
80
100
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
100µs
SINGLE PULSE
RθJA = 125 C/W
TA = 25 C
1ms
10ms
RDS(ON) LIMIT
100ms
1s
10s
DC
1
VGS = -4.5V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θJA(t) = r(t) + RθJA
0.2
RθJA = 125oC/W
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
T
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0 001
0.0001
0.001
0 01
0.1
1
10
100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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