FDS4559-F085 [ONSEMI]
60V 互补 PowerTrench® MOSFET;
| 型号： | FDS4559-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 60V 互补 PowerTrench® MOSFET 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS4559-F085
60V Complementary PowerTrench MOSFET
Features
General Description
•
Q1: N-Channel
This complementary MOSFET device is produced using
ON Semiconductor’s advanced PowerTrench
process that has been especially tailored to
minimize the on-state resistance and yet
maintain low gate charge for superior switching
performance.
4.5 A, 60 V
R
DS(on) = 55 mΩ @ VGS = 10V
RDS(on) = 75 mΩ @ VGS = 4.5V
•
Q2: P-Channel
–3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V
RDS(on) = 135 mΩ @ VGS
= –4.5V
Applications
• DC/DC converter
•
Qualified to AEC Q101
RoHS Compliant
• Power management
• LCD backlight inverter
•
Q2
D2
5
6
7
8
4
3
2
1
D2
D1
D1
Q1
G2
SO-8
S2
G1
S1
Pin 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
VDSS
VGSS
ID
Drain-Source Voltage
60
±20
4.5
20
–60
±20
–3.5
–20
V
V
A
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
(Note 1b)
1.6
1.2
(Note 1c)
2
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDS4559
FDS4559-F085
13”
12mm
2008 Semiconductor Components Industries,
LLC.December-2017, Rev 1
Publication Order Number:
FDS4559-F085/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source VDD = 30 V,
ID = 4.5 A
Q1
Q1
90
mJ
A
Avalanche Energy
Maximum Drain-Source
Avalanche Current
4.5
Off Characteristics
BVDSS
Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
Q1
Q2
Q1
Q2
60
–60
V
mV/°C
µA
Voltage
Breakdown Voltage
Temperature Coefficient
58
–49
∆BVDSS
∆TJ
IDSS
Zero Gate Voltage Drain
Current
V
V
DS = 48 V, VGS = 0 V
DS = –48 V, VGS = 0 V
Q1
Q2
1
–1
IGSS
Gate-Body Leakage
VGS = +20 V, VDS = 0 V
GS = +20 V, VDS = 0 V
Q1
Q2
+100
+100
nA
V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
DS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
Q1
Q2
Q1
Q2
1
–1
2.2
–1.6
–5.5
4
3
–3
V
V
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
mV/°C
mΩ
RDS(on)
Static Drain-Source
On-Resistance
V
V
V
GS = 10 V, ID = 4.5 A
GS = 10 V, ID = 4.5 A, TJ = 125°C
GS = 4.5 V, ID = 4 A
Q1
42
72
55
55
94
75
Q2
VGS = –10 V, ID = –3.5 A
VGS = –10 V, ID = –3.5 A, TJ = 125°C
82
130
105
105
190
135
V
GS = –4.5 V, ID = –3.1 A
VGS = 10 V, VDS = 5 V
GS = –10 V, VDS = –5 V
ID(on)
gFS
On-State Drain Current
Q1
Q2
Q1
Q2
20
–20
A
S
V
Forward Transconductance VDS = 10 V, ID = 4.5 A
VDS = –5 V, ID = –3 5 A
14
9
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Q1
Q1
Q2
Q1
Q2
Q1
Q2
650
759
80
90
35
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Q2
Output Capacitance
V
DS = –30 V, VGS = 0 V,
Reverse Transfer
Capacitance
f = 1.0 MHz
39
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
11
7
8
20
14
18
20
35
34
15
22
18
21
ns
ns
V
DD = 30 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
10
19
19
6
12
12.5
15
2.4
2.5
2.6
3.0
Q2
ns
V
DD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
ns
Qg
Qgs
Qgd
Q1
nC
nC
nC
V
DS = 30 V, ID = 4.5 A, VGS = 10 V
Q2
DS = –30 V, ID = –3.5 A, VGS = –10V
V
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2
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
1.3
–1.3
1.2
A
V
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2)
0.8
–0.8
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
–1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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3
Typical Characteristics: Q2
1.8
1.6
1.4
1.2
1
15
VGS = -10V
-4.5V
-6.0V
VGS = -3.5V
-4.0V
12
9
-5.0V
-4.0V
-3.5V
-4.5V
-5.0V
6
-6.0V
-3.0V
-7.0V
-8.0V
-10V
3
-2.5V
0.8
0
0
2
4
6
8
10
0
1
2
3
4
5
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
0.4
0.3
0.2
0.1
0
ID = -3.5A
1.8
1.6
1.4
1.2
1
ID = -1.5A
VGS = -10V
TA = 125oC
0.8
0.6
0.4
TA = 25oC
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
12
9
100
TA = -55oC
VDS = -5V
VGS = 0V
25oC
10
1
TA = 125oC
125oC
25oC
-55oC
6
0.1
0.01
3
0
0.001
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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4
Typical Characteristics: Q2
1200
1000
800
600
400
200
0
10
VDS = 10V
ID = -3.0A
f = 1 MHz
VGS = 0 V
20V
8
6
4
2
0
30V
CISS
COSS
CRSS
0
4
8
12
16
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
40
30
20
10
0
SINGLE PULSE
RθJA = 135°C/W
100µs
T
A = 25°C
RDS(ON) LIMIT
10
1
10ms
100ms
1s
10s
VGS = -10V
DC
SINGLE PULSE
0.1
0.01
R
θJA = 135oC/W
T
A = 25oC
0.01
0.1
1
10
100
1000
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
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5
Typical Characteristics: Q1
1.8
1.6
1.4
1.2
1
20
VGS = 10V
6.0V
5.0V
4.5V
16
12
8
VGS = 4.0V
4.0V
4.5V
5.0V
6.0V
8.0V
3.5V
10V
16
4
0.8
0
0
4
8
12
20
0
1
2
3
4
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
2.2
ID = 2.3A
ID = 4.5A
2
0.12
0.1
VGS = 10V
1.8
1.6
1.4
1.2
1
TA = 125oC
0.08
0.06
0.04
0.02
0
TA = 25oC
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
16
12
8
VGS = 0V
TA = -55oC
25oC
VDS = 5V
10
125oC
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
4
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1
2
3
4
5
6
VSD, BODY DIODE FORWARD VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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6
Typical Characteristics: Q1
10
900
800
700
600
500
400
300
200
100
0
ID = 4.5A
VDS = 10V
f = 1MHz
VGS = 0 V
20V
8
6
4
2
0
30V
CISS
COSS
CRSS
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
10
40
30
20
10
0
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
R
DS(ON) LIMIT
100µs
1m
10ms
100ms
1s
1
DC
VGS= 10V
SINGLE PULSE
RθJA= 135oC/W
TA= 25oC
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
RθJA = 135°C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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