FDS4935BZ [ONSEMI]
双 P 沟道，PowerTrench® MOSFET，- 30V，-6.9A，22mΩ;
| 型号： | FDS4935BZ |
| 厂家： | 
ONSEMI |
| 描述： | 双 P 沟道，PowerTrench® MOSFET，- 30V，-6.9A，22mΩ 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS4935BZ
Dual 30 Volt P-Channel PowerTrench MOSFET
General Description
Features
x –6.9 A, –30 V. RDS(ON) = 22 m: @ VGS = –10 V
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
RDS(ON) = 35 m: @ VGS = – 4.5 V
x Extended VGSS range (–25V) for battery applications
x ESD protection diode (note 3)
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
x High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
x High power and current handling capability
D1
5
6
7
8
4
3
2
1
D1
D2
Q1
Q2
D2
G1
SO-8
S1
G2
S2
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS\
Parameter
Drain-Source Voltage
Ratings
–30
Units
V
VGS
ID
Gate-Source Voltage
+25
–6.9
V
A
Drain Current – Continuous
– Pulsed
(Note 1a)
–50
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.6
W
1.0
(Note 1c)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
qC
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
qC/W
qC/W
Thermal Resistance, Junction-to-Case
RTJC
Package Marking and Ordering Information
Reel Size
Device Marking
Device
Tape width
Quantity
2500 units
FDS4935BZ
FDS4935BZ
13’’
12mm
Publication Order Number:
FDS4935BZ/D
2006 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–30
V
VGS = 0 V,
ID = –250 PA
'BVDSS
ꢀꢀꢀ'TJ
IDSS
Breakdown Voltage Temperature
Coefficient
24
ID = –250 PA,Referenced to 25qC
mV/qC
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = –24 V, VGS = 0 V
VGS = +25 V, VDS = 0 V
–1
PA
PA
IGSS
+10
On Characteristics
VGS(th)
(Note 2)
Gate Threshold Voltage
–1
–1.9
–5
–3
V
VDS = VGS, ID = –250 PA
'VGS(th)
ꢀꢀꢀ'TJ
rDS(on)
Gate Threshold Voltage
Temperature Coefficient
ID = –250 PA,Referenced to 25qC
mV/qC
m:
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –6.9 A
18
27.5
26
22
35
34
V
GS = –4.5 V, ID = –5.3 A
VGS = –10 V, ID = –6.9A,TJ=125qC
VDS = –5 V, ID = –6.9 A
gFS
Forward Transconductance
22
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1360
240
pF
pF
pF
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
200
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
12
13
68
38
29
16
4
22
23
ns
ns
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 :
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
108
61
ns
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge, VGS = 10V
Total Gate Charge, VGS = 5V
Gate–Source Charge
Gate–Drain Charge
40
nC
nC
nC
nC
VDS = –15 V, ID = –6.9 A,
GS = –10 V
V
23
Qgd
7
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–2.1
–1.2
A
V
VSD
VGS = 0 V, IS = –2.1 A (Note 2)
–0.8
tRR
IF = –8.8 A,
Reverse Recovery Time
24
9
ns
diF/dt = 100 A/µs
(Note 2)
QRR
Reverse Recovery Charge
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 78°C/W steady state
when mounted on a
1in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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2
Typical Characteristics
50
3
2.6
2.2
1.8
1.4
1
VGS = -10V
-6.0V
-5.0V
VGS = -3.5V
-4.5V
40
30
20
10
0
-4.0V
-4.0V
-4.5V
-5.0V
-3.5V
-6.0V
-8.0V
-10V
-3.0V
0.6
0
10
20 30
-ID, DRAIN CURRENT (A)
40
50
0
1
2
3
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
0.06
0.04
0.02
0
1.6
1.4
1.2
1
ID = -8.8A
ID = -4.4A
VGS = -10V
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
-VGS, GATE TO SOURCE VOLTAGE (V)
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
VGS = 0V
VDS = -5V
10
40
30
20
10
0
TA = 125oC
1
0.1
25oC
-55oC
TA = 125oC
-55oC
0.01
0.001
25oC
2
2.5
3
-VGS, GATE TO SOURCE VOLTAGE (V)
3.5
4
4.5
5
0
0.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
1.2
1.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
2000
1600
1200
800
400
0
10
f = 1 MHz
GS = 0 V
ID = -8.8A
V
8
Ciss
VDS = -10V
-20V
6
-15V
4
Coss
2
0
Crss
0
5
10
15
20
25
30
0
6
12
18
24
Qg, GATE CHARGE (nC)
30
36
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
RTJA = 125°C/W
TA = 25°C
RDS(ON) LIMIT
100 s
P
1ms
10ms
100ms
1s
1
DC
VGS = -10V
SINGLE PULSE
RTJA = 125oC/W
0.1
T
A = 25oC
0.01
0.01
0.1
-VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RTJA(t) = r(t) * RTJA
RTJA = 125oC/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
J - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
0.01
T
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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