FDS5680 [ONSEMI]
N 沟道 PowerTrench MOSFET，60V，8A，20mΩ;
| 型号： | FDS5680 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench MOSFET，60V，8A，20mΩ |
| 文件： | 总7页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(on)
0.020 mW @ 10 V
0.025 mW @ 6 V
−60 V
S A
60 V
D
D
FDS5680
D
D
General Description
G
This N−Channel MOSFET is produced using onsemi’s advanced
PowerTrench process that has been especially tailored to minimize
on−state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered
applications where low in−line power loss and fast switching are
required.
S
S
S
SOIC8
CASE 751EB
MARKING DIAGRAM
Features
• S A, −60 V.
R
R
= 0.020 mW @ V = 10 V
GS
DS(ON)
$Y&Z&2&K
FDS
= 0.025 mW @ V = 6 V
DS(ON)
GS
• Low Gate Charge (30 nC typical)
• Fast Switching Speed
5680
• High Performance Trench Technology for Extremely Low R
• High Power and Current Handling Capability
• These Device is Pb−Free and Halide Free
DS(ON)
FDS5680 = Specific Device Code
$Y
&Z
&2
&K
= onsemi Logo
= Assembly Location
= Date Code
Applications
= Lot Run Traceability Code
• dc−dc Converter
• Load Switch
• Motor Drives
PIN ASSIGNMENT
5
6
4
3
2
1
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
A
Symbol
Parameter
Drain−Source Voltage
Value
60
Unit
V
V
DSS
GSS
7
8
Gate−Source Voltage
20
V
V
Drain Current
− Continuous
− Pulsed
I
D
(Note 1a)
8
50
A
ORDERING INFORMATION
Power Dissipation for Single Operation
P
D
(Note 1a)
(Note 1b)
(Note 1c)
W
2.5
1.2
1
†
Device
Package
Shipping
FDS5680
SOIC8
2500 /
Operating and Storage Junction
Temperature Range
_C
−55 to +150
T , T
J
stg
CASE 751EB
(Pb−Free)
Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Value
Unit
Thermal Resistance,
°C/W
50
R
θ
JA
Junction−to−Ambient
(Note 1a)
(Note 1)
Thermal Resistance,
Junction−to−Case
°C/W
25
R
θ
JC
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
June, 2022 − Rev. 0
FDS5680/D
FDS5680
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
= 0 V, I = 250 mA
60
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature Coefficient
I = 250 mA, Referenced to 25_C
D
−
27
mV/_C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate−Body Leakage, Forward
Gate−Body Leakage, Reverse
V
DS
V
GS
V
GS
= 48 V, V = 0 V
−
−
−
−
−
−
1
mA
nA
nA
DSS
GS
I
= 20 V, V = 0 V
100
−100
GSSF
GSSR
DS
I
= −20 V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V I = 250 mA
GS, D
2
2.5
4
V
Gate Threshold Voltage
Temperature Coefficient
I = 250 mA, Referenced to 25_C
D
−
−4.5
−
mV/_C
DVGS(th)
DTJ
R
Static Drain−Source
On−Resistance
V
GS
V
GS
V
GS
= 10 V, I = 8 A
−
−
−
0.017 0.020
0.027 0.032
0.019 0.025
W
DS(on)
D
= 10 V, I = 8 A, T = 125_C
D
J
= 6 V, I = 7.5 A
D
I
On−State Drain Current
V
= 10 V, V = 5 V
25
−
−
−
A
D(on)
GS
DS
DS
g
FS
Forward Transconductance
V
= 5 V, I = 8 A
−
28
mS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V,
−
−
−
1850
290
−
−
−
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
100
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= 30 V, I = 1 A,
−
−
−
−
−
−
−
13
8
24
16
26
50
42
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
16
32
30
8.5
5.5
ns
d(off)
t
f
ns
Q
V
DD
V
GS
= 15 V, I = 8 A,
nC
nC
nC
g
D
= 10 V
Q
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = 2.1 A (Note 2)
I
−
−
−
2.1
1.2
A
V
S
V
SD
V
GS
0.74
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient resistance where the case thermal reference is defined as the solder mounting
θ
JA
surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θ
θ
CA
JC
b) 105°C/W when
b) 125°C/W when
mounted on a
minimum pad.
a) 50°C/W when
mounted on a 0.02
mounted on a
2
2
in pad of 2 oz
0.5 in pad of 2
copper.
oz copper.
Scale 1:1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
FDS5680
TYPICAL CHARACTERISTICS
2.4
2.1
1.8
1.5
50
40
30
V
= 10 V
6.0 V
4.5 V
GS
V
GS
= 4.0 V
4.5 V
7.0 V
5.0 V
5.0 V
6.0 V
20
10
0
1.2
4.0 V
0.9
0.6
7.0 V
0
1.5
2
1
10
20
DRAIN CURRENT (A)
40
0.5
V
30
2.5
3
0
50
I
D,
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 2. On−Resistance Variation with
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
0.06
1.6
I
V
= 8.0 A
I
D
= 4.0 A
D
= 10 V
GS
0.05
1.4
1.2
0.04
0.03
0.02
0.01
1
0.8
0.6
T = 125°C
J
25°C
8
150
6
125
2
4
10
−50
−25
0
25
50
100
75
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
100
50
V
GS
= 0 V
V
DS
= 5 V
40
30
20
10
1
T = −55°C
J
0.1
0.01
T = 125°C
J
25°C
125°C
10
0
25°C
−55°C
0.001
0.4
2
0.6
1
0.8
2.5
V
3
3.5
4
5
0.2
1.2
4.5
, GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE VOLTAGE (V)
GS
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature
Figure 5. Transfer Characteristics
www.onsemi.com
3
FDS5680
TYPICAL CHARACTERISTICS (continued)
2500
10
8
I
D
= 8.0 A
C
V
= 12 V
iss
DS
2000
1500
1000
500
0
24 V
6
4
48 V
C
oss
2
0
C
rss
21
Q ,GATE CHARGE (nC)
28
14
0
0
7
35
6
12
, DRAIN TO SOURCE VOLTAGE (V)
30
18
24
V
G
DS
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
100
10
1
50
40
30
20
100 μs
R
Limit
DS(ON)
SINGLE PULSE
1 ms
R
= 125°C/W
θ
JA
T = 25°C
10 ms
100 ms
1 s
10 s
DC
0.1
10
0
0.01
0.001
0.1
SINGLE PULSE TIME (s)
1000
0.01
10
0.1
1
10
100
100
1
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
1
D = 0.5
0.5
0.2
0.1
R
(t) = r(t) * R
q
JA
q
JA
0.2
0.1
R
= 125°C/W
q
JA
0.05
0.05
P
(pk)
0.02
0.01
t
1
0.02
0.01
t
2
Single Pulse
0.005
T − T = P * R (t)
q
JA
J
A
Duty Cycle, D = t / t
1
2
0.002
0.001
0.0001
300
0.01
0.1
t , TIME (s)
1
10
0.001
100
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
www.onsemi.com
4
FDS5680
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDS5680D84Z
Small Signal Field-Effect Transistor, 8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS5680F011
Small Signal Field-Effect Transistor, 8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS5680L99Z
Power Field-Effect Transistor, 8A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD
FDS5680S62Z
Small Signal Field-Effect Transistor, 8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS5680_NL
Small Signal Field-Effect Transistor, 8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS5690D84Z
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明