FDS6294 [ONSEMI]
N 沟道，快速开关，PowerTrench® MOSFET，30V，13A，11.3mΩ;
| 型号： | FDS6294 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，快速开关，PowerTrench® MOSFET，30V，13A，11.3mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：433K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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February 2007
tm
FDS6294
30V N-Channel Fast Switching PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 13 A, 30 V.
RDS(ON) = 11.3 mΩ @ VGS = 10 V
RDS(ON) = 14.4 mΩ @ VGS = 4.5 V
• Low gate charge (10 nC typical)
• High performance trench technology for extremely
low RDS(ON)
Applications
• DC/DC converter
• Power management
• Load switch
• High power and current handling capability.
• RoHS Compliant
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8
S
S
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
± 20
13
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
50
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
3.0
PD
W
1.2
EAS
mJ
Single Pulse Avalanche Energy
(Note 3)
181
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
RθJA
RθJA
RθJC
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6294
FDS6294
13’’
12mm
2500 units
FDS6294 Rev D1 (W)
2007 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
GS = ± 20 V, VDS = 0 V
ID = 250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
27
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
1
µA
nA
IGSS
V
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.8
–5
3
V
VDS = VGS
,
ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
mV/°C
mΩ
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
VGS= 10 V, ID = 13 A, TJ=125°C
ID = 13 A
ID = 12 A
9.4
11.5
13.5
11.3
14.4
16.5
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 10 V,
VDS = 5 V
ID = 13 A
50
A
S
Forward Transconductance
48
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1205
323
102
0.9
pF
pF
pF
Ω
VDS = 15 V,
f = 1.0 MHz
VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
9
4
18
8
ns
ns
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
24
6
48
12
14
ns
ns
Qg
Qgs
Qgd
10
3.5
3
nC
nC
nC
VDS = 15 V,
VGS = 5 V
ID = 13 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
Voltage
VSD
VGS = 0 V,
IS = 2.1 A (Note 2)
0.74
trr
Diode Reverse Recovery Time
IF = 13 A, diF/dt = 100 A/µs
25
14
nS
nC
Qrr
Diode Reverse Recovery Charge
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 11A,VDD = 30V, VGS = 10V
FDS6294 Rev D1 (W)
Typical Characteristics
2.2
2
60
VGS = 10V
6.0V
4.0V
4.5V
3.5.V
50
40
30
20
10
0
VGS = 3.5V
1.8
1.6
1.4
1.2
1
4.0V
4.5V
5.0V
3.0V
6.0V
40
10V
0.8
0
10
20
30
50
60
0
0.5
1
1.5
2
2.5
I
D, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.028
1.8
1.6
1.4
1.2
1
ID = 13A
VGS = 10V
ID = 13A
0.024
0.02
0.016
0.012
0.008
0.004
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
70
TA = -55oC
VDS = 5V
VGS = 0V
10
25oC
125o
60
50
40
30
20
10
0
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6294 Rev D1 (W)
Typical Characteristics
1500
1200
900
600
300
0
10
VDS = 10V
f = 1MHz
GS = 0 V
ID = 13A
CISS
15V
V
8
6
4
2
0
20V
COSS
CRSS
0
5
10
Qg, GATE CHARGE (nC)
15
20
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
100
100
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
1
DC
TJ=25
10
VGS = 10V
0.1
0.01
SINGLE PULSE
RθJA = 125oC/W
TJ=125
T
A = 25oC
1
0.01
0.01
0.1
1
10
100
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (mS)
Figure 9. Maximum Safe Operating Area.
Figure 10. Unclamped Inductive Switching
Capability Figure
50
40
30
20
10
0
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
11. Single Pulse Maximum Power Dissipation.
FDS6294 Rev D1 (W)
Typical Characteristics
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 125 /W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6294 Rev D1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
OCX™
OCXPro™
SILENT SWITCHER®
SMART START™
SPM™
UniFET™
VCX™
Wire™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
HiSeC™
Stealth™
I2C™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC®
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
EcoSPARK™
E2CMOS™
EnSigna™
FACT®
FAST®
FASTr™
FPS™
FRFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
Across the board. Around the world.™
The Power Franchise®
ScalarPump™
Programmable Active Droop™
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDS6294 Rev D1 (W)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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