FDS6612A [ONSEMI]

单 N 沟道，逻辑电平，Power Trench® MOSFET，30V，8.4A，22mΩ;


型号：	FDS6612A
厂家：	ONSEMI
描述：	单 N 沟道，逻辑电平，Power Trench® MOSFET，30V，8.4A，22mΩ PC 开关光电二极管晶体管
文件：	总9页 (文件大小：977K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

FDS6612A

Single N-Channel, Logic-Level, PowerTrench^MOSFET

General Description

Features

This

produced

N-Channel

using

Logic

Level

MOSFET

Semiconductor’s

• 8.4 A, 30 V.

R_DS(ON)= 22 mΩ @ V_GS= 10 V

R_DS(ON)= 30 mΩ @ V_GS= 4.5 V

advanced PowerTrench process that has been

especially tailored to minimize the on-state resistance

and yet maintain superior switching performance.

• Fast switching speed

• Low gate charge

These devices are well suited for low voltage

and battery powered applications where low in-line

power loss and fast switching are required.

• High performance trench technology for extremely

low R_DS(ON)

• High power and current handling capability

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

±20

8.4

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

2.5

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

P_D

1.0

E_AS

Single Pulse Avalanche Energy

(Note 3)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

(Note 1)

125

R_θJA

R_θJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2500 units

FDS6612A

13’’

12mm

Publication Order Number:

FDS6612A/D

October-2017, Rev. 4

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

V_GS= 0 V,

I_D= 250 µA, Referenced to 25°C

V_DS= 24 V, V_GS= 0 V

V_DS= 24 V, V_GS= 0 V, T_J=55°C

_GS= ±20 V, V_DS= 0 V

I_D= 250 µA

∆BVDSS

∆T_J

Breakdown Voltage Temperature

Coefficient

mV/°C

I_DSS

Zero Gate Voltage Drain Current

µA

I_GSS

Gate–Body Leakage

±100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

1.9

V_DS= V_GS

I_D= 250 µA

∆VGS(th)

Gate Threshold Voltage

Temperature Coefficient

I_D= 250 µA, Referenced to 25°C

–4.4

mV/°C

mΩ

∆T_J

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 10 V,

V_GS= 4.5 V,

I_D= 8.4 A

I_D= 7.2 A

V_GS= 10 V, I_D= 8.4 A, T_J=125°C

I_D(on)

g_FS

On–State Drain Current

V_GS= 10 V,

V_DS= 15 V,

V_DS= 5 V

I_D= 8.4 A

Forward Transconductance

Dynamic Characteristics

C_iss

C_oss

C_rss

R_G

Input Capacitance

560

140

Ω

V_DS= 15 V,

f = 1.0 MHz

V_GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS= 15 mV, f = 1.0 MHz

2.5

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

_DD= 15 V,

I_D= 1 A,

R_GEN= 6 Ω

V_GS= 10 V,

Q_g

Q_gs

Q_gd

5.4

1.7

1.9

7.6

V_DS= 15 V,

V_GS= 5 V

I_D= 8.4 A,

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

2.1

1.2

Drain–Source Diode Forward

Voltage

V_SD

V_GS= 0 V,

I_S= 2.1 A (Note 2)

0.77

t_rr

Diode Reverse Recovery Time

I_F= 8.4 A, d_iF/d_t= 100 A/µs

Q_rr

Diode Reverse Recovery Charge

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a) 50°C/W when mounted

on a 1in²pad of 2 oz

copper

b) 125°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2 Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3 Starting TJ = 25°C, L = 1mH, I_AS= 7A, V_DD= 27V, V_GS= 10V

www.onsemi.com

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= 10V

4.5V

V_GS= 3.5V

4.0V

6.0V

4.0V

3.5V

4.5V

5.0V

6.0V

10V

3.0V

2.5

0.8

0.5

1.5

I_D, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

0.1

I_D= 8.4A

V_GS= 10V

I_D= 4.2A

1.4

1.2

0.08

0.06

0.04

0.02

T_A= 125^oC

T_A= 25^oC

0.8

0.6

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS= 0V

V_DS= 5V

T_A= 125^oC

0.1

25^oC

T_A= 125^oC

-55^oC

0.01

0.001

0.0001

-55^oC

25^oC

0.2

0.4

0.6

0.8

1.2

1.5

2.5

3.5

4.5

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

www.onsemi.com

Typical Characteristics

800

600

400

200

f = 1 MHz

V_GS= 0 V

I_D= 8.4A

V_DS= 10V

20V

C_iss

15V

C_oss

C_rss

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

100µs

R_DS(ON)LIMIT

1ms

10ms

100ms

10s

V_GS= 10V

SINGLE PULSE

R_θJA= 125^oC/W

T_A= 25^oC

0.1

0.01

125

0.001

0.01

0.1

100

0.01

0.1

100

t_AV, TIME IN AVALANCHE (mS)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Unclamped Inductive Switching

Capability

SINGLEPULSE

R_θ_JA= 125^oC/W

T_A= 25^oC

0.001

0.01

0.1

100

t₁, TIME(sec)

Figure 11. Single Pulse Maximum Power Dissipation.

www.onsemi.com

Typical Characteristics

D = 0.5

R_θJA(t) = r(t) * R_θJA

R_θJA= 125^oC/W

0.2

0.1

0.05

P(pk)

0.02

0.01

t₁

t₂

0.01

T_J- T_A= P * R_θJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 12. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

www.onsemi.com

PSPICE Electrical Model N-Channel

.SUBCKT FDS6612A 2 1 3

*NOM TEMP=25 DEG C

*REV A - JULY 2003

CA 12 8 1E-9

CB 15 14 4.0E-10

CIN 6 8 5.1E-10

LDRAIN

DPLCAP

DRAIN

DBODY 7 5 DBODYMOD

DBREAK 5 11 DBREAKMOD

DPLCAP 10 5 DPLCAPMOD

RLDRAIN

RSLC1

DBREAK

EBREAK 11 7 17 18 34.2

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 6 10 6 8 1

EVTHRES 6 21 19 8 1

EVTEMP 20 6 18 22 1

RSLC2

ESLC

RDRAIN

DBODY

EBREAK 18

ESG

EVTHRES

IT 8 17 1

MWEAK

LGATE

EVTEMP

RGATE

GATE

LGATE 1 9 3.84E-9

LDRAIN 2 5 1.00E-9

LSOURCE 3 7 4E-9

MMED

MSTRO

RLGATE

LSOURCE

CIN

SOURCE

RLGATE 1 9 38.4

RLDRAIN 2 5 10

RLSOURCE 3 7 40

RSOURCE

RLSOURCE

S1A

S2A

S2B

RBREAK

MMED 16 6 8 8 MMEDMOD

MSTRO 16 6 8 8 MSTROMOD

MWEAK 16 21 8 8 MWEAKMOD

S1B

RVTEMP

RBREAK 17 18 RBREAKMOD 1

RDRAIN 50 16 RDRAINMOD 8E-3

RGATE 9 20 4.2

VBAT

EGS

EDS

RSLC1 5 51 RSLCMOD 1E-6

RSLC2 5 50 1E3

RVTHRES

RSOURCE 8 7 RSOURCEMOD 7.5E-3

RVTHRES 22 8 RVTHRESMOD 1

RVTEMP 18 19 RVTEMPMOD 1

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1E-6*105),3))}

.MODEL DBODYMOD D (IS=7E-15 RS=6.1E-3 N=0.84 TRS1=1.7E-3 TRS2=1.0E-6

+ CJO=3.2E-10 TT=10E-9 M=0.5 IKF=0.3 XTI=3.0)

.MODEL DBREAKMOD D (RS=1E-1 TRS1=1.12E-3 TRS2=1.25E-6)

.MODEL DPLCAPMOD D (CJO=14E-11 IS=1E-30 N=10 M=0.34)

.MODEL MWEAKMOD NMOS (VTO=1.82 KP=0.05 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=42 RS=.1)

.MODEL MMEDMOD NMOS (VTO=2.1 KP=6 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=4.2)

.MODEL MSTROMOD NMOS (VTO=2.55 KP=50 IS=1E-30 N=10 TOX=1 L=1U W=1U)

.MODEL RBREAKMOD RES (TC1=0.83E-3 TC2=1E-7)

.MODEL RDRAINMOD RES (TC1=6E-3 TC2=5E-6)

.MODEL RSLCMOD RES (TC1=2.5E-3 TC2=4.5E-6)

.MODEL RSOURCEMOD RES (TC1=1.0E-3 TC2=1E-6)

.MODEL RVTHRESMOD RES (TC1=-2.013E-3 TC2=-7E-6)

.MODEL RVTEMPMOD RES (TC1=-1.5E-3 TC2=1E-6)

.MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-4 VOFF=-3)

.MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3 VOFF=-4)

.MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.3 VOFF=-0.5)

.MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-0.5 VOFF=-1.3)

.ENDS

Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

www.onsemi.com

SPICE Thermal Model

.SUBCKT FDS6612A_THERM TH TL

*THERMAL MODEL SUBCIRCUIT

*REV A - JULY 2003

JUNCTION

*MIN PAD RJA

RTHERM1

RTHERM2

RTHERM3

CTHERM1

CTHERM2

CTHERM3

CTHERM4

CTHERM5

CTHERM6

CTHERM7

CTHERM8

0.005

0.05

0.10

0.35

0.45

0.50

0.55

3.00

CTHERM2

CTHERM3

CTHERM4

CTHERM5

RTHERM1

RTHERM2

RTHERM3

RTHERM4

RTHERM5

RTHERM6

RTHERM7

RTHERM8

5.000

6.250

7.500

8.750

10.625

11.875

31.250

43.750

RTHERM4

RTHERM5

.ENDS

RTHERM6

RTHERM7

RTHERM8

CTHERM6

CTHERM7

CTHERM8

AMBIENT

www.onsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

www.onsemi.com

❖

FDS6612A [ONSEMI]

相关型号：

FDS6612A-NB5E029A

FDS6612A-NB5E029A

FDS6612A-OLDDIE

FDS6612AD84Z

FDS6612AL86Z

FDS6612AS62Z

FDS6612A_03

FDS6614A

FDS6614AF011

FDS6614AL86Z

FDS6614AL99Z

FDS6630