FDS6676AS [ONSEMI]
N 沟道，PowerTrench® SyncFET™，30V，14.5A，6.0mΩ;
| 型号： | FDS6676AS |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® SyncFET™，30V，14.5A，6.0mΩ 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
SyncFETt – N-Channel,
V
MAX
R
MAX
I MAX
D
DSS
DS(on)
POWERTRENCH)
30 V
6.0 mW @ 10 V
14.5 A
7.25 mW @ 4.5 V
30 V
FDS6676AS, FDS6676AS-G
D
D
D
D
General Description
G
S
S
The FDS6676AS is designed to replace a single SO−8 MOSFET
and Schottky diode in synchronous DC:DC power supplies. This 30 V
MOSFET is designed to maximize power conversion efficiency,
S
SOIC8
(SO−8)
CASE 751EB
providing a low R
and low gate charge. The FDS6676AS
DS(ON)
includes an integrated Schottky diode using onsemi’s monolithic
SyncFET technology.
MARKING DIAGRAM
Features
• 14.5 A, 30 V
♦ R
♦ R
Max = 6.0 mW at V = 10 V
DS(ON)
GS
Max = 7.25 mW at V = 4.5 V
FDS6676AS
ALYW
DS(ON)
GS
• Includes SyncFET Schottky Body Diode
• Low Gate Charge (45 nC Typical)
• High Performance Trench Technology for Extremely Low R
and Fast Switching
DS(ON)
FDS6676AS = Device Code
A
L
YW
= Assembly Site
= Wafer Lot Number
= Assembly Start Week
• High Power and Current Handling Capability
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC/DC Converter
• Low Side Notebook
PIN CONNECTIONS
5
6
7
8
4
3
2
1
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
February, 2022 − Rev. 3
FDS6676AS/D
FDS6676AS, FDS6676AS−G
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
Drain−Source Voltage
Gate−Source Voltage
Drain Current
30
DSS
GSS
V
20
V
I
D
Continuous (Note 1a)
14.5
A
Pulsed
50
A
P
D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
W
1.2
1
T , T
Operating and Storage Junction Temperature Range
–55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
Ratings
50
Unit
°C/W
°C/W
R
q
JA
R
25
q
JC
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 50°C/W when mounted
b. 105°C/W when mounted
c.
2
2
on a 1 in pad of 2 oz
on a .04 in pad of 2 oz
copper.
copper.
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2
FDS6676AS, FDS6676AS−G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = 1 mA
30
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 10 mA, Referenced to 25°C
−
20
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
−
−
−
−
500
100
mA
DSS
GSS
DS
GS
I
Gate−Body Leakage
=
20 V, V = 0 V
nA
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 1 mA
1
1.5
3
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature
Coefficient
= 10 mA, Referenced to 25°C
−
−4
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 14.5 A
−
−
4.5
5.9
6.7
−
6.0
7.25
8.5
−
mW
DS(on)
D
= 4.5 V, I = 13.2 A
D
= 10 V, I = 14.5 A, T = 125°C
−
D
J
I
On−State Drain Current
= 10 V, V = 5 V
50
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 10 V, I = 14.5 A
66
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V, f = 1.0 MHz
−
−
−
−
2510
710
270
1.6
−
−
pF
pF
pF
W
iss
DS
GS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
V
= 15 mV, f = 1.0 MHz
2.8
G
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Turn−On Delay Time
Turn−On Rise Time
V
V
= 15 V, I = 1 A
−
−
−
−
−
−
−
−
−
−
−
−
10
12
43
29
17
22
34
29
45
25
7
20
22
69
46
31
35
54
46
63
35
−
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
Turn−Off Delay Time
Turn−Off Fall Time
d(off)
t
f
Turn−On Delay Time
Turn−On Rise Time
V
DD
V
GS
= 15 V, I = 1 A
D
d(on)
= 4.5 V, R
= 6 W
GEN
t
r
Turn−Off Delay Time
Turn−Off Fall Time
d(off)
t
f
Q
Total Gate Charge at Vgs = 10 V
Total Gate Charge at Vgs = 5 V
Gate−Source Charge
Gate−Drain Charge
V
= 15 V, I = 14.5 A
g(TOT)
DD D
Q
g
Q
Q
gs
gd
8
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
Drain−Source Diode Forward Voltage
V
V
= 0 V, I = 3.5 A (Note 2)
−
−
−
−
−
0.4
0.5
27
0.7
−
V
V
SD
GS
GS
S
= 0 V, I = 7 A (Note 2)
S
t
Diode Reverse Recovery Time
Diode Reverse Recovery Current
Diode Reverse Recovery Charge
I = 14.5 A, d /d = 300 A/ms (Note 3)
F
−
ns
A
rr
iF
t
I
1.9
26
−
RM
Q
−
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. See “SyncFET Schottky Body Diode Characteristics” below.
www.onsemi.com
3
FDS6676AS, FDS6676AS−G
TYPICAL CHARACTERISTICS
50
40
30
20
10
0
2.4
2.2
V
= 10 V
GS
3.5 V
V
= 3 V
GS
3.0 V
2
1.8
1.6
1.4
1.2
1
4.5 V
6.0 V
3.5 V
4.0 V
4.5 V
2.5 V
6.0 V
10 V
0.8
0
0.25
0.5
0.75
1
0
10
20
30
40
50
V
DS
, DRAIN−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
0.016
0.014
0.012
0.01
1.4
1.2
1
I
V
= 14.5 A
I
D
= 7.3 A
D
= 10 V
GS
T
A
= 125°C
0.008
0.006
0.004
0.8
0.6
T
A
= 25°C
−55 −35 −15
5
25 45 65 85 105 125
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Junction Temperature
50
40
30
20
10
0
100
10
V
DS
= 5 V
V
= 0 V
GS
T
A
= 125°C
1
−55°C
25°C
−55°C
0.1
T
A
= 125°C
0.01
0.001
25°C
1
1.5
2
2.5
3
3.5
0
0.2
0.4
0.6
0.8
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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4
FDS6676AS, FDS6676AS−G
TYPICAL CHARACTERISTICS (continued)
10
8
3500
3000
I
D
= 14.5 A
f = 1 MHz
= 0 V
V
GS
2500
V
DD
= 10 V
C
iss
20 V
15 V
6
2000
1500
4
C
oss
1000
500
2
C
rss
0
0
0
10
20
30
40
50
0
5
10
15
20
25
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
50
100
SINGLE PULSE
R = 125°C/W
q
JA
100 ms
1 ms
10 ms
100 ms
1 s
R
LIMIT
DS(ON)
40
30
20
10
T
= 25°C
A
10
1
10 s
DC
V
= 10 V
GS
0.1
SINGLE PULSE
= 125°C/W
R
q
JA
T
= 25°C
A
0
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−SOURCE VOLTAGE (V)
t, TIME (s)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.2
R
R
(t) = r(t) x R
= 125°C/W
q
q
q
JC
JC
JC
0.1
0.1
0.05
0.02
P(pk)
0.01
0.01
t1
t2
T − T = P x R (t)
q
JC
J
C
SINGLE PULSE
0.001 0.01
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.1
1
10
100
1000
t, TIME (s)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c. Transient thermal
response will change depending on the circuit board design.
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5
FDS6676AS, FDS6676AS−G
TYPICAL CHARACTERISTICS (continued)
SyncFET Schottky Body Diode Characteristics
onsemi’s SyncFET process embeds a Schottky diode in
parallel with POWERTRENCH MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12 shows
the reverse recovery characteristic of the FDS6676AS.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
0.1
T
= 125°C
= 100°C
A
0.01
0.001
T
A
0.0001
0.00001
T
A
= 25°C
0
5
10
15
20
V
DS
, REVERSE VOLTAGE (V)
10 nS/DIV
Figure 14. SyncFET Body Diode Reverse Leakage vs.
Figure 12. FDS6676AS SyncFET Body Diode
Reverse Recovery Characteristics
Drain−Source Voltage and Temperature
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent
size MOSFET produced without SyncFET (FDS6676).
10 nS/DIV
Figure 13. Non−SyncFET (FDS6676) Body Diode
Reverse Recovery Characteristics
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6
FDS6676AS, FDS6676AS−G
TYPICAL CHARACTERISTICS (continued)
L
VDS
BVDSS
t P
VGS
RGE
VDS
VDD
+
DUT
IAS
V DD
−
0 V
VGS
tp
vary t to obtain
IAS
P
0.01 W
required peak I
AS
tAV
Figure 15. Unclamped Inductive Load Test Circuit
Figure 16. Unclamped Inductive Waveforms
Same type as
+
−
+
VDD
QG(TOT)
−
VGS
10 V
VGS
QGD
QGS
DUT
Ig(REF)
Charge, (nC)
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
tON
tOFF
RL
td(ON)
td(OFF)
VDS
tf
tr
VDS
90%
90%
VGS
+
RGEN
DUT
VDD
10%
10%
−
0 V
90%
VGS
Pulse Width ≤ 1 ms
Duty Cycle ≤ 0.1%
VGS
50%
50%
10%
Pulse Width
0 V
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
FDS6676AS
Device Marking
Package Type
Reel Size
Tape Width
Shipping
FDS6676AS
SOIC8 (SO−8)
(Pb−Free)
13”
12 mm
2500 / Tape & Reel
2500 / Tape & Reel
FDS6676AS−G
FDS6676AS
SOIC8 (SO−8)
(Pb−Free)
13”
12 mm
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
SyncFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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