FDS6682 [ONSEMI]
30V N沟道PowerTrench® MOSFET;型号: | FDS6682 |
厂家: | ONSEMI |
描述: | 30V N沟道PowerTrench® MOSFET PC 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:235K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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February 2004
FDS6682
30V N-Channel PowerTrenchÒ MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
·
14 A, 30 V.
RDS(ON) = 7.5 mW @ VGS = 10 V
RDS(ON) = 9.0 mW @ VGS = 4.5 V
·
·
Low gate charge (22 nC typical)
High performance trench technology for extremely
low RDS(ON)
Applications
·
High power and current handling capability
·
DC/DC converter
D
D
5
6
7
8
4
3
2
1
D
D
G
S
S
SO-8
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
±20
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
14
50
2.5
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
PD
W
1.2
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
RqJA
°C/W
°C/W
RqJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6682
FDS6682
13’’
12mm
2500 units
FDS6682 Rev D(W)
Ó2004 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 mA
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
23
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 24 V,
VGS = 20 V,
VGS = 0 V
VDS = 0 V
10
mA
nA
nA
IGSSF
IGSSR
100
VGS = –20 V, VDS = 0 V
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.7
3
V
VDS = VGS
,
ID = 250 mA
DVGS(th)
DTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 mA, Referenced to 25°C
–5.6
mV/°C
mW
VGS = 10 V,
VGS = 4.5 V,
ID = 14 A
ID = 12.5 A
5.7
6.6
8
7.5
9
11.5
VGS = 4.5 V, ID = 12.5 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 5 V
50
A
S
Forward Transconductance
VDS = 10 V,
ID = 14 A
70
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
2310
582
pF
pF
pF
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
237
Switching Characteristics (Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 W
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
7
20
14
70
29
31
ns
ns
44
16
22
6.4
8
ns
ns
VDS = 15 V,
VGS = 5 V
ID = 14 A,
Qg
Qgs
Qgd
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
Voltage
VSD
(Note 2)
0.7
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDS6682 Rev D(W)
Typical Characteristics
80
2.2
2
VGS = 10V
4.5V
3.5V
VGS = 3.0V
60
1.8
1.6
1.4
1.2
1
3.0V
40
20
0
3.5V
4.0V
4.5V
6.0V
60
10V
0.8
0
0.5
1
1.5
2
2.5
175
4
0
20
40
ID, DRAIN CURRENT (A)
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.6
1.4
1.2
1
0.016
ID = 7.0A
ID = 14A
VGS = 10V
0.014
0.012
0.01
TA = 125oC
0.008
0.006
0.004
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
100
25oC
TA = -55oC
VGS = 0V
VDS = 5V
125oC
10
1
80
60
40
20
0
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0.0001
1.5
2
2.5
3
3.5
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6682 Rev D(W)
Typical Characteristics
10
4000
3000
2000
1000
0
f = 1 MHz
VGS = 0 V
VDS = 5V
ID = 14A
10V
8
6
4
2
0
15V
CISS
COSS
CRSS
0
5
10
15
20
25
30
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
RqJA = 125°C/W
TA = 25°C
100ms
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
qJA(t) = r(t) + RqJA
qJA = 125oC/W
0.2
R
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6682 Rev D(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
PACMAN™
POP™
Power247™
PowerSaver™
PowerTrench
QFET
SPM™
Stealth™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
FACT Quiet Series™
FAST
FASTr™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
QS™
QT Optoelectronics™ TinyLogic
HiSeC™
I2C™
Quiet Series™
RapidConfigure™
RapidConnect™
TINYOPTO™
TruTranslation™
UHC™
i-Lo™
Across the board. Around the world.™
The Power Franchise
ProgrammableActive Droop™
SILENT SWITCHER UltraFET
SMART START™
VCX™
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I10
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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