FDS6692A [ONSEMI]
30V N沟道PowerTrench® MOSFET;
| 型号： | FDS6692A |
| 厂家： | 
ONSEMI |
| 描述： | 30V N沟道PowerTrench® MOSFET 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：510K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2010
FDS6692A
N-Channel PowerTrench® MOSFET
30V, 9A, 11.5mΩ
Features
General Description
RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A
High performance trench technology for extremely low
RDS(ON)
RDS(ON) and fast switching speed.
Low gate charge
High power and current handling capability
RoHS Compliant
Applications
DC/DC converters
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
©2010 Fairchild Semiconductor Corporation
FDS6692A Rev. A2
1
www.fairchildsemi.com
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
V
±20
Continuous (TA = 25oC, VGS = 10V, RθJA = 85oC/W)
Continuous (TA = 25oC, VGS = 4.5V, RθJA = 85oC/W)
Pulsed
9
8.2
A
A
ID
48
A
EAS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
79
mJ
W
oC
PD
1.47
-55 to 150
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
50
85
oC/W
oC/W
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
2500 units
FDS6692A
FDS6692A
SO-8
330mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
-
-
-
V
I
D = 250µA,
Referenced to 25oC
DS = 24V
∆BVDSS
∆TJ
Breakdown Voltage Temp. Coefficient
21
-
mV/oC
V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
VGS = 0V
TJ = 150oC
250
±100
VGS = ±20V
nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.2
-
-
2.5
-
V
∆VGS(TH)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA,
-5
mV/oC
Referenced to 25oC
ID = 9A, VGS = 10V
-
-
8.2
11
11.5
14.5
I
D = 8.2A, VGS = 4.5V
RDS(ON)
Drain to Source On Resistance
mΩ
ID = 9A, VGS = 10V,
TJ = 150oC
-
13
19
Dynamic Characteristics
CISS
COSS
CRSS
RG
Input Capacitance
-
-
-
-
-
-
-
-
-
-
1210
330
138
2.0
22
1610
440
210
-
pF
pF
pF
Ω
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VGS = 0V to 10V
29
16
1.2
-
nC
nC
nC
nC
nC
nC
VGS = 0V to 5V
VGS = 0V to 1V
12
VDD = 15V
D = 9A
Ig = 1.0mA
I
0.93
3
Qgs2
Qgd
2.1
4.8
-
-
FDS6692A Rev. A2
2
www.fairchildsemi.com
Switching Characteristics (VGS = 10V)
tON
td(ON)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
60
-
ns
ns
ns
ns
ns
ns
8
32
33
13
-
-
VDD = 15V, ID = 9A
VGS = 10V, RGS = 6.2Ω
td(OFF)
tf
Turn-Off Delay Time
Fall Time
-
-
tOFF
Turn-Off Time
69
Drain-Source Diode Characteristics
I
SD = 9A
-
-
-
-
-
-
-
-
1.25
1.0
27
V
V
VSD
Source to Drain Diode Voltage
ISD = 2.1A
trr
Reverse Recovery Time
ISD = 9A, dISD/dt=100A/µs
ISD = 9A, dISD/dt=100A/µs
ns
nC
QRR
Reverse Recovered Charge
17
Notes:
1: Starting T = 25°C, L = 0.3mH, I = 23A, V = 27V, V = 10V.
J
AS
DD
GS
2: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
θJA
is guaranteed by design while R
is determined by the user’s board design.
θJC
θJA
2
3: R
is measured with 1.0 in copper on FR-4 board
θJA
FDS6692A Rev. A2
3
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
24
21
18
15
12
2.8
2.6
2.4
2.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.0V
4.5V
WAVEFORMS
IN DESCENDING
ORDER:
2
1.8
3.5V
10V
1.6
1.4
1.2
9
6
4.0V
5.0V
4.0V
3.5V
3.0V
5.0V
3
0
1
10V
0.8
0.1
, DRAIN TO SOURCE VOLTAGE (V)
0
0.2
0.3
0.5
0.4
24
20
0
12
, DRAIN CURRENT (A)
6
V
I
DS
D
Figure 1. On Region Characteristics
Figure 2. On-Resistance Variation with Drain
Current and Gate Voltage
0.02
1.6
1.4
1.2
I
=9A
I
V
= 9A
D
D
PULSE DURATION = 80µs
=10V
0.018
0.016
GS
DUTY CYCLE = 0.5% MAX
o
T
=150 C
J
0.014
0.012
1.0
o
T
=25 C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.01
0.8
0.6
0.008
0.006
- 80
- 40
0
40
80
120
160
10
2
4
8
6
o
T , JUNCTION TEMPERATURE ( C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 3. On Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
24
PULSE DURATION = 80
µs
I
= 9A
S
DUTY CYCLE = 0.5% MAX
21
18
15
12
10
1
V
= 6V
DS
o
T
= 150 C
J
o
T
= 25 C
J
0.1
o
9
6
o
T
= 25 C
T
= 150 C
J
J
o
o
T
= - 55 C
J
0.01
T
= -55 C
J
3
0
0.001
0
1
2
3
4
1.2
0
0.2
0.4
0.6
0.8
1.0
V
, GATE TO SOURCE VOLTAGE (V)
GS
V
, BODY DIODE FORWARD VOLTAGE
SD
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
With Source Current and Temperature
FDS6692A Rev. A2
4
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
2000
10
C
ISS
VDD =15V
8
1000
C
OSS
6
4
C
RSS
WAVEFORMS IN
DESCENDING ORDER:
ID = 9A
ID = 1A
f = 1MHz
2
0
V
= 0V
GS
100
10
0
5
15
20
25
0.03
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
30
V
Q , GATE CHARGE (nC)
DS
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
20
10
TJ = 25 o
C
100µs
1
TJ = 100 o
C
OPERATION IN THIS
AREA MAY BE LIMITED
1ms
TJ = 150 o
C
BY R
10ms
DS(ON)
0.1
0.01
DC
SINGLE PULSE
T
T
= MAX RATED
= 25 C
J
1
0.01
o
A
0.1
1
10
100
1000
t
, TIME IN AVALANCHE (ms)
1
0.1
10
AV
100
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Safe Operating Area
2000
1000
10
CURRENT LIMITED
BY PACKAGE
9
SINGLE PULSE
8
7
o
RθJA = 85 C/W
V
= 10V
GS
o
T
= 25 C
100
10
1
6
5
A
V
= 4.5V
4
3
2
1
GS
o
R
= 85 C/W
θJA
0
50
125
0
75
100
150
10-5
10-4
10-3
10-2
10-1
100
101
102
103
o
T
, AMBIENT TEMPERATURE ( C)
A
t, PULSE WIDTH (s)
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 12. Single Maximum Power Dissipation
FDS6692A Rev. A2
5
www.fairchildsemi.com
2
D = 0.5
0.2
1
0.1
0.05
0.02
0.01
PDM
0.1
0.01
1E-3
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x RθJA + TC
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t Rectangular Pulse Duration
Figure 13. Transient Thermal Response Curve
FDS6692A Rev. A2
6
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
AccuPower™
Auto-SPM™
FlashWriter
FPS™
*
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
®*
®
®
Build it Now™
CorePLUS™
F-PFS™
FRFET
The Power Franchise
®
®
SM
CorePOWER™
CROSSVOLT™
CTL™
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
Programmable Active Droop™
m
TinyBoost™
TinyBuck™
TinyCalc™
®
QFET
QS™
Current Transfer Logic™
Quiet Series™
RapidConfigure™
™
®
DEUXPEED
GTO™
®
TinyLogic
Dual Cool™
EcoSPARK
EfficentMax™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
TINYOPTO™
TinyPower™
TinyPWM™
®
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EZSWITCH™*
TinyWire™
™*
TriFault Detect™
TRUECURRENT™*
μSerDes™
MicroPak™
SMART START™
®
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
Fairchild
®
Fairchild Semiconductor
FACT Quiet Series™
®
UHC
®
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
FACT
FAST
OPTOLOGIC
®
®
OPTOPLANAR
®
FastvCore™
FETBench™
Sync-Lock™
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I46
7
www.fairchildsemi.com
FDS6692A Rev. A2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FDS6692F011
Small Signal Field-Effect Transistor, 0.012A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS6692L86Z
Small Signal Field-Effect Transistor, 0.012A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS6694L86Z
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS6694_NF073
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
FAIRCHILD
FDS6699S_NL
Small Signal Field-Effect Transistor, 21A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明