FDS6875 [ONSEMI]
双 P 沟道，2.5V 指定，PowerTrench® MOSFET，-20V，-6A，30mΩ;
| 型号： | FDS6875 |
| 厂家： | 
ONSEMI |
| 描述： | 双 P 沟道，2.5V 指定，PowerTrench® MOSFET，-20V，-6A，30mΩ PC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS6875
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
Features
-6 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V,
RDS(ON) = 0.040 W @ VGS = -2.5 V.
These P-Channel
2.5V specified MOSFETs are
ON Semiconductor's advanced
produced
using
PowerTrench process that has been especially tailored to
minimize the on-state resistance and yet maintain low gate
charge for superior switching performance.
Low gate charge (23nC typical).
High performance trench technology for extremely low
RDS(ON)
These devices are well suited for portable electronics
applications: load switching and power management,
.
High power and current handling capability.
battery charging and protection circuits.
SuperSOTTM-6
SuperSOTTM-8
SOIC-16
SOT-23
SO-8
SOT-223
D2
4
5
6
7
8
D2
D1
D1
3
2
1
G2
S2
G1
pin 1
SO-8
S1
Absolute Maximum Ratings
TA = 25oC unless otherwise noted
Symbol Parameter
FDS6875
Units
Drain-Source Voltage
Gate-Source Voltage
-20
±8
V
VDSS
VGSS
ID
V
A
Drain Current - Continuous
- Pulsed
(Note 1a)
-6
-20
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
1.6
(Note 1b)
(Note 1c)
1
0.9
Operating and Storage Temperature Range
-55 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
78
40
°C/W
°C/W
(Note 1)
Publication Order Number:
FDS6875/D
© 1998 Semiconductor Components Industries, LLC.
October-2017, Rev.4
O
Electrical Characteristics (TA = 25 C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-20
V
ID = -250 µA, Referenced to 25 oC
mV/oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
-21
DBVDSS/DTJ
-1
µA
µA
nA
nA
IDSS
VDS = -16 V, VGS = 0 V
-10
TJ = 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25 oC
-0.4
-20
-0.8
2.8
-1.5
V
mV/oC
Gate Threshold Voltage Temp. Coefficient
DVGS(th)/DTJ
Static Drain-Source On-Resistance
0.024
0.033
0.032
0.03
0.048
0.04
RDS(ON)
VGS = -4.5 V, ID = -6 A
W
TJ =125°C
VGS = -2.5 V, ID = -5.3 A
VGS = -4.5 V, VDS = -5 V
VDS = -4.5 V, ID = -6 A
ID(ON)
gFS
On-State Drain Current
A
S
Forward Transconductance
22
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
2250
500
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
200
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
8
16
27
ns
ns
tD(on)
tr
tD(off)
tf
VDS= -10 V, ID = -1 A
15
VGEN = -4.5 V, RGEN = 6 W
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
98
35
135
55
ns
ns
Qg
Qgs
Qgd
VDS = -10 V, ID = -6 A,
VGS = -5 V
23
31
nC
nC
nC
3.9
5.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2)
-1.3
-1.2
A
V
IS
VSD
-0.7
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% .
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2
Typical Electrical Characteristics
20
VGS = -4.5V
-2.5V
2.5
2
-3.0V
15
VGS
= -2.0V
-2.0V
10
1.5
1
-2.5 V
-3.0 V
-3.5 V
5
0
-4.5V
0.5
0
0.6
- V
1.2
1.8
2.4
3
0
4
8
12
16
20
, DRAIN-SOURCE VOLTAGE (V)
DS
- I , DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
1.6
0.1
0.08
0.06
0.04
0.02
0
ID = -3.0A
I D
VGS
=
-6A
-4.5V
=
1.4
1.2
1
T
= 125°C
25° C
4
A
0.8
0.6
-50
-25
0
25
50
75
100
125
150
1
2
3
5
T
, JUNCTION TEMPERATURE (° C)
- V , GATE TO SOURCE VOLTAGE (V)
GS
J
Figure 3. On-Resistance Variation with
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Temperature.
20
5
20
15
10
5
VGS
= 0V
VDS = -5.0V
T
= -55° C
J
25° C
125° C
1
0.1
T
= 125° C
J
25° C
-55° C
0.01
0.001
0
0.5
0
0.3
, BODY DIODE FORWARD VOLTAGE (V)
SD
0.6
0.9
1.2
1
1.5
2
2.5
- V
- V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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3
Typical Electrical Characteristics (continued)
4000
2000
1000
500
5
ID= -6A
C
iss
4
VDS
=
-5V
-10V
-15V
3
2
1
0
C
oss
C
rss
200
100
f = 1 MHz
VGS
=
0 V
0.1
0.2
0.5
1
2
5
10
20
0
5
10
15
20
25
- V
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
DS
g
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
30
10
30
25
20
15
10
5
SINGLE PULSE
R JA =135°C/W
q
A
T
= 25°C
3
0.5
VGS = -4.5V
SINGLE PULSE
R JA = 135° C/W
0.05
0.01
q
TA
= 25° C
0
0.01
0.1
0.5
10
50 100
300
0.1
0.3
- V
1
2
5
10
30
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
0.5
0.2
0.1
0.2
0.1
R
(t) = r(t) * R
q
JA
JA
q
R
= 135°C/W
JA
q
0.05
0.05
0.02
0.01
P(pk)
0.02
0.01
t
1
t
2
Single Pulse
0.005
T
- T = P * R
(t)
JA
J
A
q
Duty Cycle, D = t /t
0.002
0.001
1
2
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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