FDS6912 [ONSEMI]
双 N 沟道，逻辑电平，PWM 优化，PowerTrench® MOSFET，30V，6A，28mΩ;
| 型号： | FDS6912 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，逻辑电平，PWM 优化，PowerTrench® MOSFET，30V，6A，28mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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July 2000
FDS6912
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs have been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
•
6 A, 30 V.
RDS(ON) = 0.028 Ω @ VGS = 10 V
DS(ON) = 0.042 Ω @ VGS = 4.5 V.
R
•
Optimized for use in switching DC/DC converters
with PWM controllers
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
•
•
Very fast switching.
Low gate charge
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D1
D1
5
6
7
8
4
3
2
1
D2
Q1
Q2
D2
G1
S1
SO-8
G2
S2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
VGSS
Gate-Source Voltage
±25
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
6
20
PD
W
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
RθJA
°C/W
°C/W
Thermal Resistance, Junction-to-Case
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6912
FDS6912
13’’
12mm
2500 units
FDS6912 Rev F (W)
2000 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V, ID = 250 µA
Breakdown Voltage Temperature
Coefficient
20
∆BVDSS
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
µA
10
TJ = 55°C
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 25 V,
VGS = –25 V
VDS = 0 V
VDS = 0 V
100
nA
nA
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
2
3
V
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
Temperature Coefficient
–5
∆VGS(th)
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 6 A
TJ = 125°C
0.024 0.028
0.034 0.048
Ω
VGS = 4.5 V,
VGS = 10 V,
VDS = 10 V,
ID = 4.9 A
VDS = 5 V
ID = 6 A
0.035 0.042
ID(on)
gFS
On–State Drain Current
20
A
S
Forward Transconductance
20
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
740
170
75
pF
pF
pF
V
DS = 15 V,
V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
13
18
8
16
24
29
16
10
ns
ns
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
ns
ns
Qg
Qgs
Qgd
7
nC
nC
nC
V
DS = 10 V,
ID = 6 A,
VGS = 5 V
3.8
2.5
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
0.75
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. θJC is guaranteed by design while RθCA is determined by the user's board design.
R
a) 78°/W when
b) 125°/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°/W when mounted on a
minimum mounting pad.
mounted on a 0.5in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6912 Rev E (W)
Typical Characteristics
30
2
1.8
1.6
1.4
1.2
1
6.0V
VGS= 10V
5.0V
4.5V
24
VGS = 4.0V
18
4.5V
4.0V
3.5V
5.0V
12
6
6.0V
7.0V
30
10V
3.0V
0.8
0
10
20
40
50
0
0
1
1
2
2
3
3
V
,D RAIN-SOUR CE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
8
7
6
5
4
3
2
1
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
= 3.0A
D
ID = 6.3A
VGS =10V
o
TA = 125 C
25oC
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
V
,GATE-SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (°C)
GS
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
VDS = 5V
VGS = 0V
25°C
125°C
TJ = -55°C
10
TA = 125oC
15
10
5
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.4
0.8
1.2
1.6
0
1
2
3
4
5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6912 Rev E (W)
Typical Characteristics (continued)
10
2000
ID = 6.3A
VDS = 5V
10V
8
6
4
2
0
C
15V
iss
1000
500
C
C
oss
rss
f = 1 MHz
VGS = 0V
200
80
0.1
0.3
1
3
10
30
0
4
8
12
16
Qg, GATE CHARGE (nC)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
25
20
15
10
100
SINGLE PULSE
RθJA= 135°C/W
TA = 25°
20
10
2
0.5
VGS = 10V
SINGLE PULSE
RθJA = 135 °C/W
TA = 25°C
0.05
0.01
5
0
0.1
0.2
0.5
1
2
5
10
20
0.01
0.1
1
10
100
1000
V DS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.5
0.2
0.1
R
(t) = r(t) * R
θJA
R
θJA
= 135°C/W
0.1
0.05
θJA
0.05
0.02
0.01
Single Pulse
P(pk)
0.02
0.01
t1
t2
0.005
T
- T = P * R
(t)
θJA
J
A
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6912 Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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