FDS6986AS [ONSEMI]
双笔记本电源，N 沟道，PowerTrench® SyncFET™，30V;
| 型号： | FDS6986AS |
| 厂家： | 
ONSEMI |
| 描述： | 双笔记本电源，N 沟道，PowerTrench® SyncFET™，30V PC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS6986AS
Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6986AS is designed to replace two single SO-
MOSFETs and Schottky diode in synchronous
8
•
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6986AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency.
7.9A, 30V
R
DS(on) = 20 mΩ @ VGS = 10V
RDS(on) = 28 mΩ @ VGS = 4.5V
•
Q1:
Optimized for low switching losses
Low gate charge (10 nC typical)
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using ON Semiconductor’s monolithic SyncFET
technology.
6.5A, 30V
RDS(on) = 29 mΩ @ VGS = 10V
DS(on) = 38 mΩ @ VGS = 4.5V
R
Q2
5
6
7
8
4
3
2
1
Q1
SO-8
Pin 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Q2
Q1
Units
VDSS
VGSS
ID
Drain-Source Voltage
30
±20
7.9
30
30
±16
6.5
20
V
V
A
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
(Note 1b)
1.6
1
(Note 1c)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6986AS
FDS6986AS
FDS6986AS
FDS6986AS-NL (Note 4)
13”
13”
12mm
12mm
2500 units
2500 units
©2005 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
Publication Order Number:
FDS6986AS/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 uA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
Q2
Q1
Q2
Q1
30
30
V
Voltage
Breakdown Voltage
Temperature Coefficient
31
23
∆BVDSS
∆TJ
mV/°C
µA
IDSS
Zero Gate Voltage Drain
Current
Q2
Q1
Q2
Q1
500
1
IGSS
Gate-Body Leakage
V
GS = ±20 V, VDS = 0 V
nA
V
±100
VGS = ±16 V, VDS = 0 V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
Q2
Q1
1
1
1.7
1.9
3
3
V
DS = VGS, ID = 250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 10 V, ID = 7.9 A
Q2
Q1
–3.2
–4.0
mV/°C
mΩ
RDS(on)
Static Drain-Source
On-Resistance
Q2
17
25
22
21
32
32
20
32
28
29
49
38
VGS = 10 V, ID = 7.9 A, TJ = 125°C
V
V
GS = 4.5 V, ID = 7 A
GS = 10 V, ID = 6.5 A
Q1
VGS = 10 V, ID = 6.5 A, TJ = 125°C
VGS = 4.5 V, ID = 5.6 A
A
S
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS = 5 V
Q2
Q1
30
20
25
15
Forward Transconductance
VDS = 5 V, ID = 7.9 A
VDS = 5 V, ID = 6.5 A
Q2
Q1
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
550
720
180
120
70
60
3.2
1.2
pF
pF
pF
Ω
V
DS = 10 V, VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
VGS = 15mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
9
10
6
18
19
12
8
40
39
8
ns
ns
ns
ns
ns
ns
ns
ns
VDD = 15 V, ID = 1 A,
4
VGS = 10V, RGEN = 6 Ω
25
24
4
3
6
11
10
15
9
15
13
6
20
20
26
18
26
23
12
6
V
DD = 15 V, ID = 1 A,
VGS = 4.5V, RGEN = 6 Ω
3
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2
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
Qg(TOT)
Total Gate Charge, Vgs = 10V
Total Gate Charge, Vgs = 5V
Gate-Source Charge
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
10
12
14
17
8
nC
nC
nC
nC
Q2:
Qg
5.6
6.5
2.0
2.3
1.5
2.1
V
DS = 15 V, ID = 7.9 A
9
Qgs
Q1:
V
DS = 15 V, ID = 6.5 A
Qgd
Gate-Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
Q2
3.0
1.3
A
ns
Trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
IF = 10 A,
diF/dt = 300 A/µs
15
6
(Note 3)
Qrr
Trr
nC
ns
Q1
IF = 6.5 A,
diF/dt = 100 A/µs
20
12
(Note 3)
Qrr
VSD
nC
V
0.6
0.8
Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A
Voltage VGS = 0 V, IS = 1.3 A
(Note 2)
(Note 2)
Q2
Q1
0.7
1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6986AS-NL is a lead free product. FDS6986AS-NL marking will appear on the reel label.
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3
Typical Characteristics: Q2
2
1.75
1.5
30
VGS = 10V
6.0V
VGS = 3.0V
3.5V
25
20
15
10
5
4.5V
3.0V
3.5V
4.0V
1.25
1
4.5V
5.0V
6.0V
10V
2.5V
0
0.75
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.065
ID = 7.9A
GS = 10V
ID = 3.95A
V
0.055
0.045
0.035
0.025
0.015
TA = 125oC
0.8
0.6
TA = 25oC
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
25
20
15
10
5
VGS = 0V
VDS = 5V
10
1
TA = 125oC
0.1
25oC
TA = 125oC
0.01
0.001
0.0001
-55oC
-55oC
25oC
0
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
V
GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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4
Typical Characteristics: Q2
10
800
600
400
200
0
f = 1MHz
VGS = 0 V
ID = 7.9A
VDS = 10V
20V
8
6
4
2
0
15V
Ciss
Coss
Crss
0
4
8
12
16
20
0
3
6
9
12
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
100µs
1ms
RDS(ON) LIMIT
10ms
100ms
1s
10s
1
DC
VGS = 10V
0.1
0.01
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
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5
Typical Characteristics Q1
3.4
3
20
4.0V
VGS = 3.0V
VGS = 10V
6.0V
4.5V
15
10
5
2.6
2.2
1.8
1.4
1
5.0V
3.5V
3.5V
4.0V
4.5V
5.0V
3.0V
6.0V
10V
2.5V
0
0.6
0
0.5
1
1.5
2
2.5
3
0
5
10
ID, DRAIN CURRENT (A)
15
20
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.135
ID = 6.5A
VGS = 10V
ID = 3.3 A
0.115
0.095
0.075
0.055
0.035
0.015
TA = 125oC
TA = 25oC
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
16
12
8
VGS = 0V
VDS = 5V
TA = -55oC
10
125oC
1
25oC
TA = 125oC
0.1
25oC
0.01
-55oC
4
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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6
Typical Characteristics Q1
10
1000
800
600
400
200
0
f = 1MHz
VGS = 0 V
ID = 6.5A
8
VDS = 10V
Ciss
20V
6
15V
4
Coss
2
0
Crss
0
4
8
12
16
20
0
3
6
9
12
15
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
100µs
1ms
10ms
100ms
1s
10
1
RDS(ON) LIMIT
10s
DC
VGS = 10V
0.1
0.01
SINGLE PULSE
RθJA = 135oC/W
T
A = 25oC
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 135 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
T
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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7
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
ON Semiconductor’s SyncFET process embeds
a
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
Schottky diode in parallel with PowerTrench MOSFET.
This diode exhibits similar characteristics to
discrete external Schottky diode in parallel with a
MOSFET. Figure 22 shows the reverse recovery
characteristic of the FDS6986AS.
a
0.1
0.01
125oC
0.001
100oC
0.0001
0.00001
25oC
0.000001
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
12.5nS/DIV
Figure 22. FDS6986AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
12.5nS/DIV
Figure 23. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
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8
Typical Characteristics
L
VDS
BVDSS
tP
VGS
RGE
VDS
VDD
+
-
IAS
DUT
VDD
0V
VGS
vary tP to obtain
required peak IAS
tp
IAS
0.01Ω
tAV
Figure 25. Unclamped Inductive Load Test
Figure 26. Unclamped Inductive
Waveforms
Circuit
Drain Current
Same type as
+
50kΩ
10V
10µF
-
1µF
+
VDD
QG(TOT)
-
VGS
10V
VGS
DUT
QGD
QGS
Ig(REF
Charge, (nC)
Figure 27. Gate Charge Test Circuit
Figure 28. Gate Charge Waveform
tON
td(ON)
tOFF
td(OFF
RL
t
VDS
tr
VDS
90%
90%
+
-
VGS
RGEN
10%
10%
0V
DUT
VDD
90%
50%
VGS
50%
VGS
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
10%
0V
Pulse Width
Figure 29. Switching Time Test
Circuit
Figure 30. Switching Time Waveforms
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9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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