FDS89161 [ONSEMI]
双 N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，2.7A，105mΩ;
| 型号： | FDS89161 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，2.7A，105mΩ |
| 文件： | 总8页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
September 2015
FDS89161
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 105 mΩ
Features
General Description
Shielded Gate MOSFET Technology
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A
High performance trench technology for extremely low rDS(on)
Applications
High power and current handling capability in a widely used
surface mount package
Synchronous Rectifier
Primary Switch For Bridge Topology
100% UIL Tested
RoHS Compliant
D2
D2
G2
S2
G1
S1
4
3
D2
D2
D1
D1
5
6
7
8
D1
D1
Q2
Q1
G2
2
1
S2
G1
S1
Pin 1
SO-8
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
100
V
V
±20
2.7
ID
A
15
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
13
31
mJ
W
TC = 25 °C
TA = 25 °C
Power Dissipation
(Note1a)
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
40
78
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDS89161
FDS89161
SO-8
2500 units
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. 1.4
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
67
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2
3
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
-9
mV/°C
V
GS = 10 V, ID = 2.7 A
86
120
144
5
105
171
176
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 6 V, ID = 2.1 A
mΩ
VGS = 10 V, ID = 2.7 A, TJ = 125 °C
VDS = 10 V, ID = 2.7 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
158
43
3
210
58
5
pF
pF
pF
Ω
VDS = 50 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
4.2
1.3
7.3
1.9
3
10
10
ns
ns
ns
ns
nC
VDD = 50 V, ID = 2.7 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
15
10
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 5 V
4.1
2.4
1.7
0.8
0.8
VDD = 50 V,
D = 2.7 A
I
nC
nC
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2.7 A
(Note 2)
(Note 2)
0.85
0.82
34
1.3
1.2
54
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 2 A
trr
Reverse Recovery Time
ns
IF = 2.7 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
21
34
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a) 78°C/W when
mounted on a 1 in
pad of 2 oz copper
b) 135°C/W when
mounted on a
minimun pad
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25°C, L = 3 mH, I = 3 A, V = 100 V, V = 10 V.
J
AS
DD
GS
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. 1.4
2
www.fairchildsemi.com
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
15
12
9
4
3
2
1
0
VGS = 5 V
VGS = 10 V
VGS = 5.5 V
VGS = 7 V
VGS = 6 V
VGS = 6 V
6
VGS = 5.5 V
VGS = 5 V
VGS = 7 V
VGS = 10 V
3
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
0
3
6
9
12
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
500
2.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 2.7 A
ID = 2.7 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10 V
400
300
200
100
0
TJ = 125 oC
TJ = 25 oC
-75 -50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F ig u re 3. No rmal i zed O n-Re si stan ce
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
20
10
15
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
12
9
VDS = 5 V
1
TJ = 150 o
C
TJ = 25 oC
TJ = 150 oC
0.1
6
TJ = 25 oC
TJ = -55 oC
0.01
0.001
3
TJ = -55 o
C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
8
9
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. 1.4
3
www.fairchildsemi.com
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
300
10
VDD = 25 V
ID = 2.7 A
C
iss
100
10
1
8
6
4
2
0
VDD = 50 V
Coss
VDD = 65 V
f = 1 MHz
= 0 V
Crss
V
GS
0
1
2
3
4
0.1
1
10
100
Q , GATE CHARGE (nC)
g
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
3
3.0
2.5
2.0
1.5
1.0
VGS = 10 V
2
1
0
TJ = 25 oC
VGS = 6 V
TJ = 100 oC
R
θJA = 78 oC/W
TJ = 125 oC
25
50
75
100
125
150
0.01
0.1
1
2
TA, Ambient TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Ambient Temperature
20
10
700
100
SINGLE PULSE
RθJA = 135 oC/W
C = 25 oC
100 us
T
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
10
100 ms
1 s
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 135 oC/W
TA = 25 oC
10 s
DC
1
0.01
0.5
0.005
10-4
10-3
10-2
10-1
1
10
102
103
0.1
1
10
100
400
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. 1.4
4
www.fairchildsemi.com
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
1
0.01
t
2
SINGLE PULSE
RθJA = 135 oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDS89161 Rev. 1.4
5
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FDS8926A_NL
Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS8928AF011
Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS8928AL86Z
Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS8928A_NL
Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS8934AD84Z
Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明