FDS8935 [ONSEMI]
双 P 沟道，Power Trench® MOSFET，-80V，-2.1A，183mΩ;
| 型号： | FDS8935 |
| 厂家： | 
ONSEMI |
| 描述： | 双 P 沟道，Power Trench® MOSFET，-80V，-2.1A，183mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS8935
Dual P-Channel PowerTrench® MOSFET
General Description
-80 V, -2.1 A, 183 mΩ
This P-channel MOSFET is produced using ON
Semiconductor’s advanced PowerTrench® process that has
Features
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
been optimized for rDS(on)
, switching performance and
ruggedness.
Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Applications
Load Switch
100% UIL Tested
RoHS Compliant
Synchronous Rectifier
D2
D2
G2
S2
G1
S1
4
D2
D2
D1
D1
D1
D1
5
3
Q2
Q1
6
G2
7
2
S2
G1
8
1
S1
Pin 1
SO-8
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
-80
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
±20
-2.1
ID
A
-10
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
37
mJ
W
TA = 25 °C
TA = 25 °C
(Note 1a)
(Note 1b)
3.1
Power Dissipation
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
40
78
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
Quantity
FDS8935
FDS8935
SO-8
12 mm
2500 units
1
©2010 Semiconductor Components Industries, LLC.
October-2017, Rev.3
Publication Order Number:
FDS8935/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
-80
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = -250 μA, referenced to 25 °C
-61
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -64 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
-1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
-1
-1.8
5
-3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = -250 μA, referenced to 25 °C
mV/°C
V
GS = -10 V, ID = -2.1 A
148
176
249
6.4
183
247
308
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = -4.5 V, ID = -1.9 A
mΩ
VGS = -10 V, ID = -2.1 A,TJ = 125 °C
VDS = -10 V, ID = -2.1 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
661
47
24
6
879
63
pF
pF
pF
Ω
VDS = -40 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
36
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
5
3
10
10
36
10
19
10
ns
ns
VDD = -40 V, ID = -2.1 A,
VGS = -10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
22
3
ns
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to -10 V
VGS = 0 V to -5 V
13
7
nC
nC
nC
nC
VDD = -40 V,
ID = -2.1 A
1.6
2.6
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = -2.1 A
(Note 2)
(Note 2)
-1.8
-0.8
19
-1.3
-1.2
30
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = -1.3 A
trr
Reverse Recovery Time
ns
IF = -2.1 A, di/dt = 300 A/μs
Qrr
Reverse Recovery Charge
34
54
nC
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a)78 °C/W when
mounted on a 1 in
pad of 2 oz copper
b)135 °C/W when
mounted on a
minimun pad
2
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting T = 25 °C, L = 3.0 mH, I = -5.0 A, V = -80V, V = -10V.
J
AS
DD
GS
www.onsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= -10 V
GS
= -5 V
VGS = -3 V
V
GS
= -4 V
8
6
4
2
0
V
GS
VGS = -3.5 V
V
= -3.5 V
= -3 V
GS
V
GS
VGS = -10 V
VGS = -5 V
VGS = -4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
0
2
4
6
8
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
800
600
400
200
0
ID = - 2.1 A
GS = -10 V
PULSE DURATION = 80 μs
ID = -2.1 A
V
DUTY CYCLE = 0.5% MAX
TJ = 150 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
20
10
10
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
6
4
2
0
VDS = -5 V
1
0.1
TJ = 150 o
C
TJ = 25 o
C
TJ = 150 o
C
TJ = 25 o
C
TJ = -55 o
C
0.01
TJ = -55 o
C
0.001
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.onsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
1000
100
10
ID = -2.1 A
VDD = -20 V
Ciss
Coss
Crss
8
VDD = -40 V
6
VDD = -60 V
4
2
0
f = 1 MHz
= 0 V
V
GS
0.1
1
10
100
0
3
6
9
12
15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
2.2
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.8
1.6
1.4
1.2
1.0
TJ = 25 oC
VGS = -10 V
VGS = -4.5 V
TJ = 100 oC
Limited by package
TJ = 125 o
C
RθJA = 78 oC/W
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
25
50
75
100
125
150
TA, Ambient TEMPERATURE (oC)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Ambient Temperature
1000
20
10
SINGLE PULSE
θJA = 135 oC/W
A = 25 o
100 us
VGS = -10 V
R
T
C
100
10
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
0.1
SINGLE PULSE
1 s
T
J
= MAX RATED
o
10 s
DC
R
= 135 C/W
θJA
1
o
0.01
T
= 25 C
A
0.5
0.005
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
1
10
100 1000
0.1
1
10
100
300
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
www.onsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.01
P
DM
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 135 oC/W
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FDS8936AD84Z
Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS8936AL86Z
Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS8947AD84Z
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS8947AL86Z
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS8947AL99Z
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS8947AS62Z
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
FAIRCHILD
FDS8947A_NL
Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOIC-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明