FDS8958B [ONSEMI]
双 N 和 P 沟道 PowerTrench® MOSFET 30V;
| 型号： | FDS8958B |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道 PowerTrench® MOSFET 30V 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：773K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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FDS8958B
Dual N & P-Channel PowerTrench® MOSFET
Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
General Description
Features
These dual N- and P-Channel enhancement mode power field
Q1: N-Channel
effect transistors are produced using ON Semiconductor's
advanced PowerTrench® process th at has been especially
tailored to minimize on-state resistan ce and yet maintain
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A
superior switching performance.
These devices are well suite d for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Q2: P-Channel
Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A
Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A
HBM ESD protection level > 3.5 kV (Note 3)
Application
DC-DC Conversion
BLU and motor drive inverter
RoHS Compliant
D2
D2
Q2
G2
S2
D2
D2
5
6
4
3
D1
D1
Q1
G2
G1
S1
D1
D1
2
1
7
8
S2
G1
S1
Pin 1
SO-8
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
30
Q2
-30
±25
-4.5
-30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
V
V
±20
6.4
30
TA = 25 °C
ID
A
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2.0
PD
TA = 25 °C (Note 1a)
TA = 25 °C (Note 1b)
(Note 4)
1.6
0.9
W
EAS
Single Pulse Avalanche Energy
18
5
mJ
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
40
78
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
FDS8958B
FDS8958B
SO-8
13 ”
2500 units
©2008 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FDS8958B/D
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max
Units
Off Characteristics
ID = 250 µA, VGS = 0 V
ID = -250 µA, VGS = 0 V
Q1
Q2
30
-30
BVDSS
Drain to Source Breakdown Voltage
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
Q1
Q2
24
-21
mV/°C
µA
I
D = -250 µA, referenced to 25 °C
V
DS = 24 V, VGS = 0 V
Q1
Q2
1
-1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VGS = ±25 V, VDS = 0 V
Q1
Q2
±100
±10
nA
µA
On Characteristics
V
GS = VDS, ID = 250 µA
Q1
Q2
1.0
-1.0
2.0
-1.9
3.0
-3.0
VGS(th)
Gate to Source Threshold Voltage
V
VGS = VDS, ID = -250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
Q1
Q2
-6
5
mV/°C
V
V
GS = 10 V, ID = 6.4 A
GS = 4.5 V, ID = 5.2 A
21
29
31
26
39
39
Q1
Q2
VGS = 10 V, ID = 6.4A, TJ = 125 °C
rDS(on)
Static Drain to Source On Resistance
mΩ
VGS = -10 V, ID = -4.5 A
VGS = -4.5 V, ID = -3.3 A
VGS = -10 V, ID = -4.5 A, TJ = 125 °C
38
60
53
51
80
72
VDD = 5 V, ID = 6.4 A
Q1
Q2
20
10
gFS
Forward Transconductance
S
V
DD = -5 V, ID = -4.5 A
Dynamic Characteristics
Q1
Q2
405
570
540
760
Q1
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
75
115
100
155
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2
VDS = -15 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
55
100
80
150
Q1
Q2
2.4
4.4
Switching Characteristics
Q1
Q2
4.3
6.0
10
12
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ns
ns
Q1
V
DD = 15 V, ID = 6.4 A,
Q1
Q2
2.0
6.0
10
12
VGS = 10 V, RGEN = 6 Ω
Q1
Q2
12
17
22
30
Q2
Turn-Off Delay Time
Fall Time
ns
VDD = -15 V, ID = -4.5 A,
VGS = -10 V, RGEN = 6 Ω
Q1
Q2
2.0
7.0
10
14
ns
VGS = 10 V
VGS = -10 V
Q1
Q2
8.3
14
12
19
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
nC
nC
nC
nC
Q1
VDD = 15 V,
ID = 6.4 A
VGS = 4.5 V
Q1
Q2
4.1
7.0
5.8
9.6
V
GS = -4.5 V
Q1
Q2
1.3
1.9
Q2
VDD = -15 V,
Q1
Q2
1.7
3.6
ID = -4.5 A
Qgd
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2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
VGS = 0 V, IS = 1.3 A
VGS = 0 V, IS = -1.3 A
(Note 2) Q1
(Note 2) Q2
0.8
-0.8
1.2
-1.2
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
Q1
Q2
17
20
30
36
Q1
ns
nC
IF = 6.4 A, di/dt = 100 A/µs
Q2
IF = -4.5 A, di/dt = 100 A/µs
Q1
Q2
6
8
12
16
Qrr
Reverse Recovery Charge
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θJA
θJC
θCA
the user's board design.
a) 78 °C/W when
mounted on a 1 in
pad of 2 oz copper
b) 135 °C/W when
mounted on a
minimun pad
2
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. UIL condition: Starting T = 25 °C, L = 1 mH, I = 6 A, V = 27 V, V = 10 V . (Q1)
J
AS
DD
GS
Starting T = 25 °C, L = 1 mH, I = -4 A, V = -27 V, V = -10 V. (Q2)
J
AS
DD
GS
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3
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
3.0
2.5
2.0
1.5
1.0
0.5
30
24
18
12
6
VGS = 3.5 V
VGS = 10 V
VGS = 6 V
VGS = 4 V
VGS = 4.5 V
VGS = 4.5 V
VGS = 4 V
VGS = 6 V
VGS = 3.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µs
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
0
0
6
12
18
24
30
0
0.5
VDS
1.0
1.5
2.0
2.5
3.0
ID, DRAIN CURRENT (A)
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
75
ID = 6.4 A
GS = 10 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
60
45
30
15
ID = 3.2 A
TJ = 125 oC
TJ = 25 oC
4
-75 -50 -25
0
25 50 75 100 125 150
2
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
30
30
VGS = 0 V
PULSE DURATION = 80 µs
10
DUTY CYCLE = 0.5% MAX
25
20
15
10
5
VDS = 5 V
TJ = 125 oC
1
TJ = 25 o
C
TJ = 125 o
C
0.1
0.01
TJ = 25 o
C
TJ = -55 o
C
TJ = -55 oC
4
0
1
2
3
5
6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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4
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
1000
100
10
10
8
ID = 6.4 A
Ciss
VDD = 10 V
6
Coss
VDD = 15 V
4
VDD = 20 V
Crss
2
f = 1 MHz
= 0 V
V
GS
0
0.1
1
10
30
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 7. Gate Charge Characteristics
9
100
10
8
7
THIS AREA IS
LIMITED BY r
DS(on)
6
5
0.1 ms
4
3
TJ = 25 o
C
1 ms
1
10 ms
100 ms
1 s
SINGLE PULSE
TJ = MAX RATED
2
0.1
TJ = 125 o
C
R
θJA = 135 oC/W
A = 25 oC
10 s
DC
T
1
1
0.01
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Forward Bias Safe
Operating Area
500
VGS = 10 V
100
SINGLE PULSE
RθJA = 135 oC/W
T
A = 25 o
C
10
1
0.5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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5
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
SINGLE PULSE
RθJA = 135 oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
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Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
30
24
18
12
6
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = -10 V
VGS = -6 V
VGS = -3.5 V
VGS = -4 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = -4.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX
VGS = -4.5 V
VGS = -4 V
VGS = -6 V
VGS = -3.5 V
VGS = -10 V
24 30
0
0.0
0
6
12
18
0.5
1.0
1.5
2.0
2.5
3.0
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 15. On- Region Characteristics
1.6
200
ID = -4.5 A
GS = -10 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V
1.4
1.2
1.0
0.8
0.6
160
ID = -2.3 A
120
80
TJ = 125 o
C
40
0
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
Figure 17. Normalized On-Resistance
vs Junction Temperature
30
10
30
25
20
15
10
5
VGS = 0 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µs
TJ = -55 o
C
TJ = 25 o
C
VDS = -5 V
TJ = 125 o
C
TJ = 125 o
C
TJ = 25 o
C
0.1
TJ = -55 o
C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
2
3
4
5
6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 20. Source to Drain Diode
Figure 19. Transfer Characteristics
Forward Voltage vs Source Current
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Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
10
8
2000
1000
ID = -4.5 A
Ciss
VDD = -10 V
6
VDD = -15 V
Coss
4
VDD = -20 V
100
30
2
Crss
f = 1 MHz
= 0 V
V
GS
0
0
3
6
9
12
15
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 22. Capacitance vs Drain
to Source Voltage
Figure 21. Gate Charge Characteristics
8
7
6
10-2
10-3
10-4
10-5
10-6
10-7
10-8
10-9
VGS = 0V
5
4
TJ = 25 o
C
TJ = 125oC
3
2
TJ = 125 o
C
TJ = 25oC
20
1
0.01
0
5
10
15
25
30
35
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
-VGS, GATE TO SOURCE VOLTAGE(V)
Figure 23. Unclamped Inductive
Switching Capability
Figure 24. Ig vs Vgs
100
10
200
100
VGS = -10 V
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
RθJA = 135 oC/W
0.1 ms
1 ms
T
A = 25 oC
1
10
10 ms
100 ms
1 s
SINGLE PULSE
J = MAX RATED
θJA = 135 oC/W
TA = 25 oC
T
0.1
R
10 s
DC
1
0.01
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
0.01
0.1
1
10
100
100 1000
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Forward Bias Safe
Operating Area
Figure 26. Single Pulse Maximum Power
Dissipation
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Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
P
DM
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
0.01
SINGLE PULSE
RθJA = 135 oC/W
1
2
x R
PEAK T = P
J
x Z
+ T
DM
θJA
θJA A
0.002
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 27. Junction-to-Ambient Transient Thermal Response Curve
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Physical Dimensions
0.65
A
4.90±0.10
(0.635)
8
5
B
1.75
6.00±0.20
5.60
3.90±0.10
1
4
PIN ONE
INDICATOR
1.27
1.27
LAND PATTERN RECOMMENDATION
0.25
C B A
SEE DETAIL A
0.175±0.75
0.22±0.30
C
1.75 MAX
0.10
0.42±0.09
OPTION A - BEVEL EDGE
(0.86) x 45°
R0.10
R0.10
GAGE PLANE
OPTION B - NO BEVEL EDGE
0.36
NOTES: UNLESS OTHERWISE SPECIFIED
8°
0°
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
D) LANDPATTERN STANDARD: SOIC127P600X175-8M.
E) DRAWING FILENAME: M08Arev15
SEATING PLANE
0.65±0.25
(1.04)
DETAIL A
SCALE: 2:1
Figure 16. 8-Lead, SOIC,JEDEC MS-012, .150-inch Narrow Body
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specifically the warranty therein, which covers ON Semicondutor products.
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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相关型号：
FDS8958_NF073
Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
FAIRCHILD
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